pt8205 20V增强型双N沟道MOSFET-骊微电子.pdf

Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) ParameterSymbolLimitUnit Drain-Source VoltageVDS20 Gate-Source VoltageVGS 12 V Continuous Drain CurrentID6 Pulsed Drain Current 1)IDM25 A TA = 25oC1.4 Maximum Power Dissipation TA = 75oC PD 1 W Operating Junction and Storage Temperature RangeTJ, Tstg -55 to 150 oC Junction-to-Ambient Thermal Resistance (PCB mounted) 2)R JA 100 oC/W Notes Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t ? 5 sec. 1) 2) MillimeterMillimeter REF. Min. Max. REF. Min. Max. A 1.10 MAX. L 0.45 REF. A1 0 0.10 L1 0.60 REF. A2 0.70 1.00 0 10 c 0.12 REF. b 0.30 0.50 D 2.70 3.10 e 0.95 REF. E 2.60 3.00 e1 1.90 REF. E1 1.40 1.80 SOT-163 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs2.5V, Ids5.2A= 24m RDS(ON),Vgs 4.5V,Ids 6A= 20m PT8205 1 -2012- 7- 8- (SOT-23-6L) MARKING: .8205A .8205A 深圳市骊微电子科技有限公司 现货TEL:13808858392 杜S 20V Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS ParameterTest Condition Static Drain-Source Breakdown VoltageBVDSSVGS = 0V, ID = 250uA 20 - - V Drain-Source On-State ResistanceRDS(on)VGS = 2.5V, ID = 5.2A 24.0 32 Drain-Source On-State ResistanceRDS(on)VGS = 4.5V, ID = 6A 20.0 25 m Gate Threshold VoltageVGS(th)VDS =VGS, ID = 250uA 0.6 1.5 V Zero Gate Voltage Drain Current 0IDSS VDS = 16V, VGS = 0V 1 uA Gate Body LeakageIGSS = 12V, VDS = 0V 100 nA Forward Transconductancegfs VDS = 5V, ID =6A 22 S Dynamic Total Gate ChargeQg 5 Gate-Source ChargeQgs 1.1 Gate-Drain ChargeQgd VDS = 10V, ID = 6A VGS = 4.5V 2.1 nC Turn-On Delay Timetd(on) 10 Turn-On Rise Time tr 11 Turn-Off Delay Timetd(off) 35 Turn-Off Fall Timetf VDD = 10V, RG = 6 ID = 1A, VGS= 4.5V 30 ns Input CapacitanceCiss 600 Output Capacitance Coss 330 Reverse Transfer CapacitanceCrss VDS = 8V, VGS = 0V f = 1.0 MHz 140 pF Source-Drain Diode Max. Diode Forward Current IS 1.7 A Diode Forward Voltage VSD IS = 1.7A, VGS = 0V 1.2 V Pulse test: pulse width = 300us, duty cycle= 2% SymbolMin. UnitMax.Typ. 1) 1) 0.72 GSV 1) 1) PT8205 2 -2012- 7- 8 - 深圳市骊微电子科技有限公司 20V Dual N-Channel Enhancement Mode MOSFET PT8205 3 -2012- 7- 8 - 深圳市骊微电子科技有限公司