RU20P7C sot23-3贴片场效应管-骊微电子.pdf

RU20P7C P-Channel Advanced Power MOSFET SymbolRatingUnit VDSS-20 VGSS10 TJ150C TSTG-55 to 150C ISTA=25C-1A IDP TA=25C-20A TA=25C-5 TA=70C-3.1 TA=25C1.3 TA=70C0.8 RJC-C/W RJA 100C/W EAS -mJ Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A MAR., Pin DescriptionFeatures Applications Absolute Maximum Ratings SOT23-3 P-Channel MOSFET Parameter Common Ratings (TA=25C Unless Otherwise Noted) -20V/-5A, RDS (ON) =20m(Typ.)VGS=-4.5V RDS (ON) =30m(Typ.)VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Load Switch Power Management Battery Protection Drain-Source Voltage V Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings Avalanche Energy, Single Pulsed Diode Continuous Forward Current 300s Pulse Drain Current Tested Continuous Drain Current(VGS=-10V) Maximum Power Dissipation Mounted on Large Heat Sink ID A PDW Thermal Resistance-Junction to Ambient G S D D S G 现货TEL:13808858392 杜S RU20P7C Min.Typ.Max. BVDSSDrain-Source Breakdown Voltage-20V -1 TJ=125C-30 VGS(th)Gate Threshold Voltage-0.4-0.7-1.1V IGSSGate Leakage Current100nA 3038m VSD Diode Forward Voltage-1.2V trrReverse Recovery Time17ns QrrReverse Recovery Charge23nC RGGate Resistance0.9 CissInput Capacitance640 CossOutput Capacitance135 CrssReverse Transfer Capacitance65 td(ON)Turn-on Delay Time9 trTurn-on Rise Time16 td(OFF)Turn-off Delay Time45 tfTurn-off Fall Time21 QgTotal Gate Charge10 QgsGate-Source Charge2 QgdGate-Drain Charge3 Notes: Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A MAR., Electrical Characteristics (TA=25C Unless Otherwise Noted) VDD=-10V, RL=3.8, IDS=-5A, VGEN=-4.5V, RG=6 VDS=-16V, VGS=-10V, IDS=-5A Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. When mounted on 1 inch square copper board, t10sec. The value in any given application depends on the users specific board design. Limited by TJmax. Starting TJ = 25C. Pulse test;Pulse width300s, duty cycle2%. Guaranteed by design, not subject to production testing. Gate Charge Characteristics nC ns ISD=-1A, VGS=0V ISD=-5A, dlSD/dt=100A/s VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-10V, Frequency=1.0MHz pF Dynamic Characteristics VGS=10V, VDS=0V Diode Characteristics 2028m SymbolParameterTest Condition RU20P7C Unit RDS(ON) Drain-Source On-state Resistance VGS=-2.5V, IDS=-4A VGS=-4.5V, IDS=-5A VDS=VGS, IDS=-250A Static Characteristics VGS=0V, IDS=-250A IDSSZero Gate Voltage Drain Current VDS=-20V, VGS=0V A RU20P7C Device Marking PackagePackagingQuantity Reel Size Tape width RU20P7CQXYWWSOT23-3Tape&Reel300078mm Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A MAR., Ordering and Marking Information Thefollowingcharacterscouldbedifferentandmeans: X=Assemblysitecode Y=Year WW=WorkWeek RU20P7C Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A MAR., Typical Characteristics 0 1 2 3 4 5 6 255075100125150 -ID- Drain Current (A) TJ- Junction Temperature (C) Drain Current VGS=-4.5V 0 20 40 60 80 012345678 RDS(ON) - On - Resistance (m) -VGS - Gate-Source Voltage (V) Drain Current Ids=-5A 0 1 2 0255075100125150 PD- Power (W) TJ- Junction Temperature (C) Power Dissipation 0.01 0.1 1 10 100 0.010.1110100 -ID- Drain Current (A) -VDS- Drain-Source Voltage (V) Safe Operation Area 10s 100s 1ms 10ms DC RDS(ON) limited TA=25C 0.01 0.1 1 10 100 1000 1E-050.00010.0010.010.1110 ZthJA - Thermal Response (C/W) Square Wave Pulse Duration (sec) Thermal Transient Impedance Single Pulse Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse RJA=100C/W RU20P7C Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A MAR., Typical Characteristics 0 5 10 15 20 25 30 012345 -ID- Drain Current (A) -VDS- Drain-Source Voltage (V) Output Characteristics -1V -2V -2.5V -3V -4.5V 0 20 40 60 80 0246810 RDS(ON)- On Resistance (m) -ID- Drain Current (A) Drain-Source On Resistance -2.5V -4.5V 0.0 0.5 1.0 1.5 2.0 2.5 -50-250255075100125150 Normalized On Resistance TJ- Junction Temperature (C) Drain-Source On Resistance VGS=-4.5V ID=-5A TJ=25C Rds(on)=20m 0.01 0.1 1 10 0.20.40.60.811.21.4 -IS - Source Current (A) -VSD- Source-Drain Voltage (V) Source-Drain Diode Forward TJ=25C TJ=150C 0 200 400 600 800 1000 110100 C - Capacitance (pF) -VDS- Drain-Source Voltage (V) Capacitance Ciss Coss Crss Frequency=1.0MHz 0 1 2 3 4 5 6 7 8 9 10 0246810 -VGS - Gate-Source Voltage (V) QG - Gate Charge (nC) Gate Charge VDS=-16V IDS=-5A RU20P7C Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A MAR., Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms RU20P7C Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A MAR., Package Information SOT23-3 L 0 . 2 C A A 2 A 1 e 1 e E 1 E Db MINNOMMAXMINNOMMAX A1.0501.1501.2500.0410.0450.049 A10.0000.0500.1000.0000.0020.004 A21.0501.1001.1500.0410.0430.045 b0.3000.4000.5000.0120.0160.020 c0.1000.1500.2000.0040.0060.008 D2.8202.9203.0200.1110.1150.119 E1.5001.6001.7000.0590.0630.067 E12.6502.8002.9500.1040.1100.116 e e11.8001.9002.0000.0710.0750.079 L0.3000.4500.6000.0120.0180.024 048048 SYMBOL MMINCH 0.950 BSC0.037 BSC RU20P7C Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A MAR., Customer Service Worldwide Sales and Service: S Technical Support: T Investor Relations Contacts: I Marcom Contact: M Editorial Contact: Em HR Contact: HR Legal Contact: L Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: [phone] FAX: [phone] E-mail: Sales-SZ