12N65L-ML UTC n沟道功率mosfet管-骊微电子.pdf

UNISONIC TECHNOLOGIES CO., LTD 12N65-ML Power MOSFET .tw 1 of 9 Copyright 2020 Unisonic Technologies Co., Ltd QW-R205-616.B 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65-ML is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES * RDS(ON) 0.85 VGS=10V, ID=6.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL 1.Gate 3.Source 2.Drain 1 TO-220F TO-220 1 1 TO-220F1 TO-262 1 TO-263 1 TO-220F2 1 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 12N65L-TA3-T 12N65G-TA3-T TO-220 G D S Tube 12N65L-TF1-T 12N65G-TF1-T TO-220F1 G D S Tube 12N65L-TF2-T 12N65G-TF2-T TO-220F2 G D S Tube 12N65L-TF3-T 12N65G-TF3-T TO-220F G D S Tube 12N65L-T2Q-T 12N65G-T2Q-T TO-262 G D S Tube 12N65L-TQ2-T 12N65G-TQ2-T TO-263 G D S Tube 12N65L-TQ2-R 12N65G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source (1) T: Tube, R: Tape Reel (2) TF1: TO-220F1, TF2: TO-220F2, TF3: TO-220F, T2Q: TO-262, TQ2: TO-263 (3) G: Halogen Free and Lead Free, L: Lead Free 12N65G-TA3-T (1)Packing Type (2)Package Type (3)Green Package 现货TEL:13808858392 杜S 12N65-ML Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 .tw QW-R205-616.B MARKING UTC 12N65 1 L: Lead Free G: Halogen Free Date Code Lot Code 12N65-ML Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 9 .tw QW-R205-616.B ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Continuous Drain Current ID 12 A Pulsed Drain Current (Note 2) IDM 24 A Avalanche Energy Single Pulsed (Note 3) EAS 576 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.4 V/ns Power Dissipation TO-220/TO-262/TO-263 PD 140 W TO-220F/TO-220F1 TO-220F2 40 W Junction Temperature TJ +150 C Storage Temperature TSTG -55 +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 30mH, IAS = 6.2A, VDD = 50V, RG = 25 , Starting TJ = 25C 4. ISD 12A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient JA 62.5 C/W Junction to Case TO-220/TO-262/TO-263 JC 0.89 C/W TO-220F/TO-220F1 TO-220F2 3.1 C/W 12N65-ML Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 9 .tw QW-R205-616.B ELECTRICAL CHARACTERISTICS (TJ=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 650 V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V 10 A Gate- Source Leakage Current Forward IGSS VGS=30V, VDS=0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6.0A 0.85 DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz 1540 pF Output Capacitance COSS 150 pF Reverse Transfer Capacitance CRSS 12 pF SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=520V, VGS=10V, ID=12A IG=1mA (Note 1, 2) 36 nC Gate-Source Charge QGS 8.6 nC Gate-Drain Charge QGD 10 nC Turn-On Delay Time (Note 1) tD(ON) VDS=100V, VGS=10V, ID=12A, RG=25 (Note 1, 2) 22 ns Turn-On Rise Time tR 23 ns Turn-Off Delay Time tD(OFF) 115 ns Turn-Off Fall Time tF 32 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Body-Diode Continuous Current IS 12 A Maximum Body-Diode Pulsed Current ISM 24 A Drain-Source Diode Forward Voltage (Note 1) VSD IS=12A , VGS=0V 1.4 V Reverse Recovery Time (Note 1) trr IS=12A , VGS=0V di/dt=100A/s 470 ns Reverse Recovery Charge Qrr 12 C Notes: 1. Pulse Test: Pulse width 300s, Duty cycle 2%. 2. Essentially independent of operating temperature. 12N65-ML Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 9 .tw QW-R205-616.B TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDD Driver VGS RG - VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test - + ISD Peak Diode Recovery dv/dt Test Circuit P. W. Period D= VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms 12N65-ML Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 9 .tw QW-R205-616.B TEST CIRCUITS AND WAVEFORMS VGS D.U.T. RG VDS RL VDD Pulse Width 1s Duty Factor0.1% VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms DUT VDS Same Type as D.U.T. VGS Charge QGSQGD QG VGS Gate Charge Test Circuit Gate Charge Waveform D.U.T. RD VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms 12N65-ML Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 9 .tw QW-R205-616.B TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain-Source Voltage, VDS (V) Drain-Source On-Resistance vs. Gate-Source Voltage Gate-Source Voltage, VGS (V) Gate Charge Characteristics Total Gate Charge, QG (nC) 0 2 4 6 12 10 8 Drain-Source On-Resistance vs. Junction Temperature Junction Temperature, TJ (C) Drain-Source On-Resistance, RDS(ON) () Gate-Source Voltage, VGS (V) Drain-Source On-Resistance Normalized 12A Breakdown Voltage vs. Junction Temperature Drain-Source Breakdown Voltage Normalized Junction Temperature, TJ (C) Drain Current vs. Drain-Source Voltage VGS=710V Note: 1.TA=25C 2.Pulse test VDS=520V VGS=10V ID=12A Pulsed 6V VGS=10V ID=6A Pulsed ID=0.25mA Pulsed Drain-Source Voltage, VDS (V) Capacitance, C (pF) Capacitance Characteristics CISS COSS CRSS Note: 1.TA=25C 2.Pulse test 4.5V 1 1000 100 10 255075100125150255075100125150 1.4 0.8 1.2 1 45687 ID=6A 01020304535515254050 0246810 3 1 2 0 5 10 0 8 2 4 1 9 7 6 3 11 061218243036 0 0.5 1 1.5 3 2.5 2 5V 5.5V 12N65-ML Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 8 of 9 .tw QW-R205-616.B TYPICAL CHARACTERISTICS (Cont.) Gate Threshold Voltage vs. Junction Temperature Junction Temperature, TJ (C) Source Current vs. Source-Drain Voltage Source-Drain Voltage, VSD (V) Drain Current vs. Gate-Source Voltage Gate-Source Voltage, VGS (V) Drain Current, ID (A) Gate Threshold Voltage Normalized Source Current, IS (A) Drain Current, ID (A) Drain-Source On-Resistance, RDS(ON) () 25C TA=150C Drain-Source On-Resistance vs. Drain Current TA=25C VGS=10V Pulsed TA=25C Pulsed Drain Current vs. Junction Temperature Junction Temperature, TJ (C) Drain Current, ID (A) ID=0.25mA Pulsed Power Dissipation vs. Junction Temperature Junction Temperature, TJ (C) Power Dissipation, PD (W) 0255075100125150 10 0.1 255075100125 1 255075100125150 18 6 12 0 0246810 150 0.6 0.7 0.8 1.1 1 0.9 0.30.50.811.41.10.40.60.91.30.71.2 1 0.6 0.8 0.4 TO-220F1 0 2 4 6 12 10 8 0216410614812 45 35 20 15 0 10 25 40 30 5 12N65-ML Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 9 of 9 .tw QW-R205-616.B TYPICAL CHARACTERISTICS (Cont.) Drain-Source Voltage, VDS (V) Drain Current, ID (A) 1100010100 Safe Operating Area DC MAX TO-220F1 Operation in this area is limited by RDS(ON) TJ=150C TC=25C Single Pulse 1 10 0.01 0.1 100us 10ms 1ms UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.