AP40N100LK 贴片mos管100v 40a-40n100场效应管参数_骊微电子.pdf

AP40N唱OOKNChannel Power MOSFElProduct Summary V11蛐100V Feature h饵”，.似25m01DV 38mC4.5V T陪nchFET P创幽rMOSFETFastSwi协ingIn 40A Exceptional on-resis饱nee and maximum DC current饵阳bilityApplication DC/DC Conve由rLoad Switch for Po阳ble DevicesBat幅rySwi灿Package Marking and Ordering Information Device翩翩naI 剧”阳lea Pa嘟”AP40N100K I AP40N100K I 市部2-3LReels恒AIIP。V帽RDAT.A SHEET。，252你sSchematic diagram D s Ta”wld伽。”ntltyABSOLUTE MAXIMUM RATINGS.25unless。therwlse n。”d)Param”r S归nbolV坦lueUnit Drain-Source Vol闻VDS 00 v Ga协.sourceVoltl吨Vm+20/-12v Continuous Drain Current lo 40 A Pulsed Drain Current IDM 150 A SI咱lepulse a咽lanche energy EAS 95 mJ Pew幡rDissipation Pn 40 w Thennal Res始饱nee骨omJunction to Ambient RaA3 刷Junction T副nperatu,eTJ 150 Storage Tam阳阳tureTsre-55叫50 深圳市骊微电子科技有限公司铨力半导体代理商AIIP。WERAP40N100K DATA SHEET N-Channel p。，werMOSFETMOSFET ELECTRICAL CHARACTERISTICS(T.=25。C unless。therwise noted)Parameter Symbol Test c。ndltlonMin Type Max Unit S回tic Characteristics Dain-source breakdown voltage V(BR)DSS VGs=OV,lo=-250A 100 v Zero gate voltage drain curentloss Vos=100V,VGs=OV A Gate-body leakage current IGss VGs=+20V,V四OV士100nA Gate theshold vol恒geVGs=10V,lo=15A 20 25 Ros(on)noVGs=4.5V,lo=10A 30 38 Forward tranconduc恒n四川QFS Vos=10V,lo=15A 10 s Dynamic characteristicsC2 Input Capacitance C；幽1015 Output Capaci恒nee巳瞄Vos=50V,VGs=OV,f=1 MHz 285 pF Reverse Transfer capacitance C，回27 Switching characterlst1cs Turn-on delay time 句（on)10 20 Turn圈。1isetime Voo=50V,lo=1A,RL=60 13.5 27 ns Turn-o仔delaytime id（，而VGs=10V,Ro=10 28 56 Turn-o仔fall time 岛20 40 Total Gate Charge Qg 15 30 Gate-Source Cha咱eQgs VDS=50V,ID=10A,1.5 nC VGS=10V Gate-Drain Cha咱eQgd 4.2 Source-Drain Diode charac幅risticsDiode Forwad voltage V囚VGs=OV,ls=1A v N。恒s:1.Pulse test;pulse widthS300”s,duty cycleS2%.2.Guaranteed by design,not su同ect t。production testing.深圳市骊微电子科技有限公司铨力半导体代理商AIIP。iWERDATA SHEET AP40N100K N-Channel Power MOSFETRATING AND CHARACTERISTICS CURVES 1.5（qgoQSEEMZO唱ON面吕。z50 40 30 20 10（）百BUSH。回国。吕苟同。URJ150 100 T 1,Junction Temperature（）N。rmalized RDS。N vs.TJ 50 0.5-50 Tc,Case Temperature（）c。ntinu。us Drain Current vs.Tc 150 100 75 50 25 ID=15A VDS=30V Fig.2 10 4 言）Sg8旨ago国043Fig.唱1.3 1.1 0.9 0.7（）233号。且Hh刮目232。z16 12 Qg,Gate Charge(nC)Gate Charge Waveform 4 150 00 T1,Junction Temperature（）N。rmalizedVth vs.TJ 50 0.5-50 Fig.4 20 15 10 25（gH白。因）8SEEMZOBEEROAS自“Fig.3 so 30 20 10（）百gugE口RQHso 40 30 20 10 0 1.5 o.s lo,Drain Current(A)Turn-On Resistance vs.ID Fig.6 Vns,Drain to Source Voltage(V)Typical Output Characteristics Fig.5 深圳市骊微电子科技有限公司铨力半导体代理商AIIP。WERDATA SHEET AP40N100K N-Channel Power MOSFET1)00 100 10（间也）8回国右。在暗U10 V凹，Drainto Source Voltage(V)Fig.7 Capacitance Characteristics 1000 100（）百OBUSH白白口。吕亩。，。同（03巴5。民EMEE吉它且写吕。zVns,Drain to Source Voltage(V)Maximum Safe。perati。n Area 0.1 Square Wave Pulse Duration(s)N。rmalized Transient Resp。nse0,01。.0010.01 0.00001 Voo 旦BVoss-Voo Fig.9 时L x 1As2 BVoss-Fig.8 Vos EAS Waveform Fig.”Switching Time Waveform Fig.唱。深圳市骊微电子科技有限公司铨力半导体代理商剧IPOWER DA:8HE町AP40N”。K.a.nnel P”。SF町T0-2$2 Pac:ka”“”“Ion D iQljb：11 A c 01:.s A也39 句mbolDI阴阳回lo幡胁”1111刷恤帽。Im刷晴1酬酶”1阴阳”In.翩翩”n.翩翩A 2.200 2.400 0.0唱7。94A1 告刨出自0.127 0.创始0.005 I 0.66唱0.860 0.026 o.。”c 非.460串串0.018 0.023。e.soo8.700 0.25&0.2&4 01 6.100 6.480 白，2010.216。在4.830TYP.0.190TYP.E 8.000 8.200 o.刽串”“国量1串串a串串串0.锦$0.094 L 事，鼠目。10.4自由0.368 0.409、飞也叙lOTYP.0.114 TYP.也21.400 1.700 0.自55喝，067L3 1.800TYP.。”STYP.也4”。1.000。.02.40.039。1.100 1翁精0.“s0.05 o8o毡h 貌似)08织沁8，“)0。.02v 5.350TYP.合且唱TYP.深圳市骊微电子科技有限公司铨力半导体代理商