APG095N01 国产100v低压mos-G095N01规格书参数_骊微电子.pdf

APG095N01 N-Channel Enhancement Mosfet剑”。1WERDATA SHEET D Feature 100V,65ARos ON)9.5m Q VGs=10V(TYP:8.0m Q)Ros ON)13m QVGs=4.5V(TYP:11m Q)Split Gate Trench TechnologyLead free product is acquiredExcellent Ros IDM 200 A Single Pulsed Avalanche Energy c2 EAs 90 mJ Power Dissipation Po 120 w Thermal Resistance from Junction to Ambient ReJA 62.5/W Junction Temperature TJ 150 Storage Temperature TsrG-55-+150 深圳市骊微电子科技有限公司铨力半导体代理商APG09SN01 剑”。1WERN-Channel Enhancement MosfetDATA SHEET MOSFET ELECTRICAL CHARACTERISTICS(T a=25unless otherwise noted)Pa ram”r Symbol Tut Condition static CharacterlsU臼Drain回ur四breakdownvol闻自V(BR)DSS Vos=OV,le=250A Zero gate voltage drain凶rrentloss Vos=BOV,VGs=OV Gate-body lea阳ge current IGSS VGS土20V,V臼OVGate th陪sholdvol问e(3)Va町th)Vos=V，田，lc=250AV田10V,lo=20A Drain唱。ur田on-resis恒neeCS Ros(cn】V回=4.5V,le=10A Forward Threshold Voltage gr.Vos=51/,lo=20A Ga饱Resis恒neeRe Vos=Vos=OV,f=1 MHz 句namlc曲raat翩翩瞌Input Capaci恒n回。随Output Capacitance 岛”Vos=50V,VGs=OV,f=1MHz R剧唱，rse T阳ns旬rCa阳.citanceG回Switching characteristics Tum-on delay time tdcon)Tum-on ri锦time1r Voc=50V,lc=20A,Tum-o怦delaytime tcic，。而Vos=10V,RG=3。Tum-o仔fall time tr Total Gate Cha用eQg Gate-Source ChageQgs VDS=50V,ID=20A,VGS=10V Gate-Drain Cha咱句dReverse Recovery Chrage Orr IF=20A,dVdt=1 OOAfus Reverse Recovery Time Trr IF=20A,dVdt=100.翩翩s。un:e-Draln Diode characterlsUca Diode Forward vol恒geV四Vos=OV,ls=20A Diode Forward currentC句Is No幅s:1.Rep回itive Rating:pul回width limited by ma刘mum junction恒mperature2.EAS Condition:TJ=25，Voo=50V,RG=25 0,L=0.5mH3.Pulse Te剖：pul拥width:S300间，duty cycleS2%4.Su阳ceMatnted on FR4 Board，但10s凶Min Type M缸Unit 100 v A 土100nA 1.2 1.8 2.5 v 8.0 9.5 mo 11 13 13.5 s 1.94 。2022 目。pF 28 17 4 ns 32 8 38.5 8 nC 9 68 nC 回.5ns 1.2 v 60 A 深圳市骊微电子科技有限公司铨力半导体代理商IIIP。1WERAPG095N01 N-Channel Enhancement MosfetDATA SHEET S；EST 一 ,II 四I/2SC 240 200 160 吨草,:l,20.5 8040 Typical Perfornance Characteristics Yes-10V 9V 8V】，事7V I/6V 5V 4V 3V，品，缸，250s PULSE TEST Tc=25 100 Figure 1.。utput Characteristics PULSED TEST T1=25 Yes=4.5V Yes=10V 16 14 m u c 幅“12 c m 10 。“.5 占 百。4 0 1.5 Figure 4.B。dy Diode F。rwardVoltage vs s。urce Current and Temperature 0.3 0.6 0 9 1.2 V50,S。urce-t。Drain v。ltage,V25 Figure 3.Drain-t。s。urce。n Resistance vs Drain Current 20 10 15 10,Drain Current,A 5 V田50V，旨，lo=20A 10。oaOA吨内，doamM。G3。”。“”。四”。匡 L.r、ISS .11 Coss 队、II Crs,住f=1MHz C国g回：.：，Cos,=Crs,=10000 1000 100 10 hhaecegowaawU 45 40 10 15 20 25 30 35 Q0,Total Gate Charge,nC 5。口100 1 10 Vos，口rain-t。Sourcev。ltage,V1 0.1 Figure 6.Gate Charge Characteristics Figure 5.Capacitance Characteristics 深圳市骊微电子科技有限公司铨力半导体代理商剑”。1WERAPG095N01 N-Channel Enhancement MosfetDATA SHEET PULSED TEST 臼=10V o 20A v 二 2.4 5284 4咽，nunuc”“盟”gzOO3。”。“E目口AUeMgeE。Z）AEZGM比 v 1.07 53197 00099 11100 阳句“。，罢，。”uaw曲。”2。曲目。，E甲伺口舌。旦司E。z22Ea。-100。95-100 200 Figure 8.Normalized On Resistance vs 50口50100 1臼T,200 Figure 7.Normalized Breakdown Voltage vs Junction Temperature-50 0 50 100 150 TJ,Junct,on Temperature（Juncti。n Temperature 队 100 80 20 主 60.e.口 I 4口。D 90 气60=t:写u=c.E 30。口。1伺Figure 10.Maximum Power Dissipation vs Case Temperature 125 50 75 100 Tc,Case Temperature，25 150 Figure 9.Maximum Continuous Drain Current vs Case Temperature 125 50 75 100 Tc,Case Temperature,C 25，、1，、4、10s 可1DOus I I Operation in This Area r-.;1ms 兰兰is Limited by Ros，扪三三三DC10ms I I 1 111111 I 三SINGLE PULSE Tc=25C 三TJ=1501 111111 1000 100 0.1 10 d飞EgUEE口仇。PULSE口TEST、10=20A 35 30 ”25 =0 20 15 占;10 口 0.01 0.1。2 1 10 100 V05.Drain-to-S。urce Voltage,V 10 4 6 8 V05,Gate-t。S。urceVoltage,V Figure 12.Maximum Safe。peratingArea Figure刊.Drain-to-Source。n Resistance vs Gate Voltage and Drain Current 深圳市骊微电子科技有限公司铨力半导体代理商IIIP。1WERAPG095N01 NChannel Enhancement Mosfet DATA SHEET EDJIn descending oderT，”；Tc+PoM Ze,c,Re,c D口5,0.3，口1,0.05,0.02,0.01,single pulse Re,c=1.6/W.一”？-，旨，国j:骂二，.Si1gle Pulses 哥：1伊d-10 nu cawEgmugZFESEEZNZ帽EEZudN1.00E+OO 1.00E-01 1.00E-02 1.00E-03 1.00E-04 0.01 1.00E-05 Pulse Width(s)Figure 13,Maximum E悔ctlve Transient Thermal Impedance,Junction-to-Case 深圳市骊微电子科技有限公司铨力半导体代理商APG09SN01N-Channel Enhancement MosfetT0220C Package Information .且hi h Symbol A A1 b b1 c c1 D E E1 e e1 F H h L L1 v L1二三Al 一liDimensions In Millimeters Min.Max.4.400 4.600 2.250 2.550 0.710 0.910 1.170 1.370 0.330 0.650 1.200 1.400 9.910 10250 8.950 9.750 12.650 13.050 2 540 TYP 4.980 5.180 250 2.950 7.900 8.100 0.000 0.300 12.900 13.400 2.850 3.250 6.900 REF.3.400 3.800 剑”。1WERDATA SHEET Dimensions In Inches Min.Max.0.173 0.181 0.089 0.100 0.028 0.036。0460 054 0.013 0.026 0.047 0.055 0.390 0.404 0.352 0.384 0.498 0.514 0.100 TYP.0.196 0.204 0.104 0.116 0.311 0.319 0.000 0.012 0.508 0.528 0.112 0.128 0.276 REF.0.134 0.150 深圳市骊微电子科技有限公司铨力半导体代理商