ID2006SEC-R1 200V高低侧栅极驱动IC-id2006芯片规格书_骊微电子.pdf

ID2006 Chipown High-Side&Low-Side Gate Drive IC General description The ID2006 is a high voltage,high speed power MOSFET driver with independent high and low side referenced output channels based on P_SUB P_EPI process.The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V.Logic inputs are compatible with standard CMOS or LSTTL output,down to 3.3V logic.The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.Application Small and medium-power motor driverPower MOSFETS driverHalfBridge Power ConvertersFull-Bridge Power ConvertersAny Complementary Drive ConvertersFeatures Fully operational to+200 V 3.3V and 5V input logic compatibledV/dt Immunity 50 V/nsecGate drive supply range from 6 V to 18 VTypically Source/Sink current capability 1 A/1 ATypically-9V negative Vs bias capabilityPackage/Order Information ID200687651234LOCOM LINHINVCC VBHO VSOrder code Package ID2006SEC-R1 SOP8 Typical Circuit ID20068765CBSRcs V1234VDC,up to 200VMLOCOM LINHINVCC VBHO VSMCU15VRcs URcs WIF UIF VIF WBSDRBQ1Q2Q3Q5Q6Q412345Note 1:RB value suggest 10 ohms,ultra fast recovery or schottky diode should be used as BSD Note 2:CBS value according to PWM control condition Note 3:Driver circuit should be adjust according to the MOSFETs be used Note 4:Pull down resistor between Gate and Source of MOSFETs,10k ohms is suggested Note 5:Resistors between HIN/LIN and MCU,recommended value is 100 to 1k ohms 深圳市骊微电子科技有限公司芯朋微代理商深圳市骊微电子科技有限公司ID2006 Chipown Pin Definitions Pin Name Pin Number Pin Function Description VCC 1 Low side and main power supply HIN 2 Logic input for high side gate driver output(HO)LIN 3 Logic input for low side gate driver output(LO)COM 4 Ground LO 5 Low side gate drive output,out of phase with LIN VS6 High side floating supply return or bootstrap return HO 7 High side gate drive output,in phase with HIN VB8 High side floating supply Block Diagram UVLODelayPulseGeneratorNoise filterRRSQUVLODriverDriver12453678Dead TimeHINLINCOMLOVCCVSHOVB深圳市骊微电子科技有限公司芯朋微代理商深圳市骊微电子科技有限公司ID2006 Chipown Absolute Maximum Ratings Exceeding these ratings may damage the device.The absolute maximum ratings are stress ratings only at TA=25 C,unless otherwise specified.Symbol Definition MIN.MAX.Units VBHigh side floating supply-0.3220 V VSHigh side floating supply return VB 20 VB+0.3 VHO High side gate drive output VS 0.3 VB+0.3 VCC Low side and main power supply-0.320 VLO Low side gate drive output-0.3VCC+0.3 VIN Logic input of HIN&LIN-0.3VCC+0.3 ESD HBM Model 1.5-kV CDM Model 500-V PD Package Power Dissipation TA 25C-0.625 W RthJA Thermal Resistance Junction to Ambient-200 C/W TJJunction Temperature-150 C TSStorage Temperature-55150 TL Lead Temperature(Soldering,10 seconds)-300 Recommended Operating Conditions Symbol Definition MIN.MAX.Units VBHigh side floating supply VS+6 VS+18 V VSHigh side floating supply return-9200 VHO High side gate drive output voltage VS VB VCC Low side supply 6 18 VLO Low side gate drive output voltage 0 VCC VIN logic input voltage(HIN&LIN)0 VCC TA Ambient temperature-40125 C 深圳市骊微电子科技有限公司芯朋微代理商深圳市骊微电子科技有限公司ID2006 Chipown Dynamic Electrical Characteristics VBIAS(VCC,VBS)=15V,CL=1000 pF and TA=25 C unless otherwise specified.Symbol Definition MIN TYP.MAX.Units tON High&low side turn on propagation delay-150 250 ns tOFF High&low side turn off propagation delay-110 250 MT Delay matching time(tON,tOFF)-50 DT Dead time-300-tR Turn on rising time-60 100 tF Turn off falling time-60 100 Static Electrical Characteristics VBIAS(VCC,VBS)=15V,CL=1000 pF and TA=25 C unless otherwise specified.Symbol Definition MIN.TYP.MAX.Units ILKHigh-side floating supply leakage current-50 A IQBSQuiescent VBS supply current-70 120 IQCCQuiescent VCC supply current-200 280 UVCCT VCC supply under-voltage trigger voltage 4.4 5.0 5.6 V VUVCCHY VCC supply under-voltage hysteresis-0.3-UVBST VBS supply under-voltage trigger voltage 3.2 3.8 4.4 VUVBSHYVBS supply under-voltage hysteresis-0.3-VOH High level output voltage drop,VBIAS-VO-0.2 V VOL Low level output voltage drop,VO-0.1 IO+Output High short circuit pulsed current-1-A IO-Output low short circuit pulsed current-1-VIH High level input threshold voltage 2.5-V VIL Low level input threshold voltage-0.8 IIN+Logic“1”input bias current(HIN“1”&LIN“1”)-10 20 A IIN-Logic“0”input bias current(HIN“0”&LIN“0”)-15 30 深圳市骊微电子科技有限公司芯朋微代理商深圳市骊微电子科技有限公司ID2006 Chipown Function Timing Diagram LINHINLOHOFig.1 Input and output timing waveform HIN/LINHO/LO5V0V0V15V10%90%50%ton50%tofftftrFig.2 Propagation and Rise/Fall time definition10%90%50%50%LOHOMTLOHOMT0V15V0V15V0V5VHIN/LINFig.3 Delay matching definition 深圳市骊微电子科技有限公司芯朋微代理商深圳市骊微电子科技有限公司ID2006 Chipown Package Information SOP8 Package Outlines and Dimensions DA3A2AA1LL1c0.25beBBE1EBASE METALSECTION B-BWITH PLATINGbb1c1 chSize Symbol Min.（mm）Typ.（mm）Max.（mm）Size Symbol Min.（mm）Typ.（mm）Max.（mm）A-1.75 D 4.70 4.90 5.10 A1 0.10-0.225 E 5.80 6.00 6.20 A2 1.30 1.40 1.50 E1 3.70 3.90 4.10 A3 0.60 0.65 0.70 e 1.27BSC b 0.39-0.48 h 0.25-0.50 b1 0.38 0.41 0.43 L 0.50-0.80 c 0.21-0.26 L1 1.05BSC c1 0.19 0.20 0.21 0-8 Top mark Package iDR.ID2006 YWWXXXXX SOP8 Note：Y：Year Code；WW：Week Code；XXXXX：Internal Code Notes:1.This drawing is subjected to change without notice.2.Body dimensions do not include mold flash or protrusion.深圳市骊微电子科技有限公司芯朋微代理商深圳市骊微电子科技有限公司ID2006 Chipown Important NoticeWuxi Chipown Microelectronics Co.Ltd.reserves the right to make changes without further notice to any products or specifications herein.Wuxi Chipown Microelectronics Co.Ltd.does not assume any responsibility for use of any its products for any particular purpose,nor does Wuxi Chipown Microelectronics Co.Ltd assume any liability arising out of the application or use of any its products or circuits.Wuxi Chipown Microelectronics Co.Ltd does not convey any license under its patent rights or other rights nor the rights of others.深圳市骊微电子科技有限公司芯朋微代理商深圳市骊微电子科技有限公司