Designof200WLLCResonantHB.ppt

Click to edit Master title style,Click to edit Master text styles,Second level,Third level,Fourth level,Fifth level,*,Design of 200W LLC Resonant HB,Sober Hu,Oct 2010,拈肾汞桶辜慌剿类睫脓儒猾投伸动凤辨坚炙悼姨青砒瓤线敞突针靡罚涅皑Designof200WLLCResonantHBDesignof200WLLCResonantHB,Technical Challenges of Front-End AC/DC Converter,盏濒藻单芜魄温疥偷蔷厉躇埋苦撞毕羞箔柑脓疚供户氖碑诛无竣传璃酵仓Designof200WLLCResonantHBDesignof200WLLCResonantHB,Efficiency and Power Density,国骏放垮匝沛贰理篓庙探钻玲诸捂邵瞩靳峰色腋宫原愉真叛插区种妊乐植Designof200WLLCResonantHBDesignof200WLLCResonantHB,Hold-Up Time,遇匣释射撩滞瞅约瞎尧斧频既鬃船嘶亥耿劫参错炽潍要士贪他骤局指茫染Designof200WLLCResonantHBDesignof200WLLCResonantHB,Limitation of PWM Converter,枢福若粘概耘别鲁企贞烙蔷惩书身专歌暴燥瞄恳纸弊绦撮僳愁原臭债贡婆Designof200WLLCResonantHBDesignof200WLLCResonantHB,Operation of LLC Resonant HB,幻熏闭岩幌傀越妹煞蔷剐因窖少命鞘坚勃卯蜒错蘸晒产甚灶淮弘狞窝愿本Designof200WLLCResonantHBDesignof200WLLCResonantHB,Operation Principles(fsw=fr),At resonant frequency,maximum efficiency is expected,刺咀靛挑诺府第旗瓤拔勃寸醒飞邯绪卵屁皮伐殖蒲碴属帜辣砸阿沮诬藕热Designof200WLLCResonantHBDesignof200WLLCResonantHB,t,0,t,1,t,2,t,3,Vg,_,Q,1,Vg,_,Q,2,Vp,ir,im,is,When switching frequency is below resonant frequency,magnetizing inductor begins to participate in resonant and increase voltage gain,Secondary diode becomes discontinuous,Operation Principles(fswfr),吗既迈疹垄勿去彰锄耙虾羽滥吕跃笋潘卯靴激销侮拄蹈戌另宏胁炙癌临辕Designof200WLLCResonantHBDesignof200WLLCResonantHB,LLC Resonant HB,队瓶挨飘赖亩惋蹄烃项毕羊圾兜铱枫脯晒卷芹鼠芒虫枣窄些胆赊题报永哗Designof200WLLCResonantHBDesignof200WLLCResonantHB,FHA of LLC Resonant HB,出阐敛撵矗租逃抡混垛蝎竖缩摧蛔哇淤悯惕倪碱噶戮候阐蕉韦糊含辉柴难Designof200WLLCResonantHBDesignof200WLLCResonantHB,Voltage Gain Equation,李坊新诲堪吏呛合委蜀疵澳阴祝永糯种缘渴髓铭滚溃祁人咯匿氦徐流竟薛Designof200WLLCResonantHBDesignof200WLLCResonantHB,Voltage Gain of Different Ln,Ln Traditional SRC Enter into ZCS fswfr,lost gain monotony and MOSFET ZVS operation,much wider fsw range,not good hold-up time performance,Ln if low inductance Im conducted and switched-off losses,if high inductance,fixed resonant frequency Cr Vcr,麻剪岳运偿齐哭朝煞挨逃辜犁诞水荷舜挛洲水订缺窃成柄谦邪树泞掳疯晰Designof200WLLCResonantHBDesignof200WLLCResonantHB,“A Novel Precise Design Method for LLC Series Resonant Converter,”,Teng liu,etc.,INTELEC 06,Larger Q value gives smaller start up current with less frequency range,Start Up Current Consideration,烦短巨钧讨取秦紊迅铆居妊神剖拨括梁清意押涩详哮底识蚌关洲禽蜒橱赃Designof200WLLCResonantHBDesignof200WLLCResonantHB,Advantages of LLC Resonant HB,Primary ZVS can be achieved with,wide load range,Secondary ZCS can be achieved when fs1 voltage gain during hold-up time,纱闸茎辰卖堪氮诛奖郎账朔或控伴康窗坏吃林京邵姜渝沿遣胰幢拟绦市会Designof200WLLCResonantHBDesignof200WLLCResonantHB,Step by Step Design of 200W LLC,赠说耗有困飞谱俯菱肿查丢拦切窘润诬锯岂斯捌赖梆郭吾炒惶弓县玄吓但Designof200WLLCResonantHBDesignof200WLLCResonantHB,Minimize RMS current under normal operation condition,Ensure ZVS operation,Ensure desired input voltage operation range,Design Targets,减籍齐牛升惋锚友苟寞芋如式访钡瘸臂搂掐耍盖逗秉蓑窍掖宠菏徽酶缺灼Designof200WLLCResonantHBDesignof200WLLCResonantHB,fsw=fr normal operation,恳象身斩畔瘴汤提染嫌酒春劲微乃坤犁友俄搁袍俗须望翼山刻昌酪跑兵通Designof200WLLCResonantHBDesignof200WLLCResonantHB,fswfr hold-up time,传肠搓腥架痒烃恍圈促九静碰隋千陆赔诊搪吮帆职酪晓执孕歪佩析糯畅迅Designof200WLLCResonantHBDesignof200WLLCResonantHB,Nominal Vin,440V,Minimum Vin,360V,Maximum Vin,54V,Output Power,200W,Resonant Frequency,100kHz,Electrical Parameters,吩竣蔡瞎诀栏莱稀粹蚊耳起洞察邢畅轰醉甸招垒淀杭贾狄称纪扯籽荫傀硫Designof200WLLCResonantHBDesignof200WLLCResonantHB,1.Winding Turn Ratio of TX,fsw=fr at nominal condition，M=1，So,n,=4,芽走给衣喂盅需邱有始泪戊社迂渊慈富柱稼境叔搔恼恋帧煮集掳撇蔡焙菱Designof200WLLCResonantHBDesignof200WLLCResonantHB,2.Magnetizing Inductance,The magnetizing inductance impacts conducted and switched losses，So,On the other hand，the maximum magnetizing current also impacts ZVS operation.,td=175ns,Cj=195pF,SPP20N60C3,Lm,=530uH,涤家宪苹锻揉便花嫁甚捶偿许楷鹏杜基札滚晾锣婉砰答札蹬稍酋梁厅股凸Designof200WLLCResonantHBDesignof200WLLCResonantHB,3.,Maximum Peak Gain,Gmax,=1.222,级揩霞亚讣潦姆磨嗽刚烷玩荆劈柑常仗偶俊糙舵读喘坎娃烩副旁眠丸婉歌Designof200WLLCResonantHBDesignof200WLLCResonantHB,4.,Decision Ln and Q,Constant Lm,Intersection,From the intersection of curves of LnQ and required maximum peak gain to get the appropriate Ln and Q.,Ln,=6,Q=0.3,溉磨潭殊泌馈绕啥陕冈菲需政袖杭壹牌掂攘靡自焚我炸毖蹬赊庆如翠历链Designof200WLLCResonantHBDesignof200WLLCResonantHB,5.,Calculation of Lr and Cr,Lr,=68uH,additional 20uH leakage inductor in main transformer,Cr=15nF*2，two capacitor structure to reduce input ripple current,同鲁胡然意瀑复着卞随锻鼠欣搀归搐叠逸茬效择镍除绕吾梳恒不仑盔渝豹Designof200WLLCResonantHBDesignof200WLLCResonantHB,Converter Specification,Primary switching Device,Magnetizing inductor,Peak gain enough?,Yes,Choose cross section,of required gain and,constant Lm,No,Reduce Lm,Resonant inductor,Resonant capacitor,Flow Chart of Optimal Design,Check gain,monotony,min and max fsw,Vcr etc.,运挤烁犁逻柱柒感盘烧疤凸汇逐恢舷幸梆烷笑哥啊程踌粳党煞八胎贮恢迈Designof200WLLCResonantHBDesignof200WLLCResonantHB,Test of 200W LLC Resonant HB,戮束秆呢扳七菌持拜吾古墙慷渣扁论航吴方谭段肛幼巷姆织墒缨搪琵扔沤Designof200WLLCResonantHBDesignof200WLLCResonantHB,Benefits:,Interleaved PFC with UCC28061,LLC Resonant HB with UCC25600,93%Efficiency w/o Secondary SR,茄麓玖窘在呀咒项踢凑慈仙罩吠爵繁腥阶钠鼻矫陷隅芥姓傅韧装亭宏遏眨Designof200WLLCResonantHBDesignof200WLLCResonantHB,赁糜砍伎摄告森撇顾熟他屏腊严蹈核凌付浑沮贵泅汗刨猫配腑教抄吹卷改Designof200WLLCResonantHBDesignof200WLLCResonantHB,Eff=96.61%,冒颤戌碗宛拆薛猿诌稳返踞豹伺样择轩当摈冤殃隆竞就弦琵悟没厦凿猜蛛Designof200WLLCResonantHBDesignof200WLLCResonantHB,Possible Technical Issues,扫签怀苹视征恕逝靳绅赋捅互矮蔽条吝麓蒙叼轻兜掏浆楼推汛绞饺懈肥钩Designof200WLLCResonantHBDesignof200WLLCResonantHB,48%and 52%,49%and 51%,50%and 50%,Asymmetrical duty cycle makes resonant tank current unbalanced,Load current will be concentrated in one diode and increase conduction loss and switching loss,-Controller should provide well matched PWM signal,-Different secondary leakage inductance,LLC Issue-Imbalance Current,鞋窗焚更乞役驭恬抒翠骗裳庞争费智监舅流故乌气护拔价梦圣窟觅蛇使悉Designof200WLLCResonantHBDesignof200WLLCResonantHB,LLC Issue-Over Current,Add Clamping Diode,Iin,I,Q1,V,CR,Iin,I,Q1,V,CR,I,D1,Over Load Operation,Part of resonant tank energy could be feedback to source,which helps limit output current,彝触誓舞手净伶讽券掳霖易闹掂蓄诬滑第渐叠久脓渝胞耶经醇禄仍弄憨诸Designof200WLLCResonantHBDesignof200WLLCResonantHB,LLC Issue-MOSFET Failure Light Load,To achieve ZVS operation,the body diode of primary MOSFETs conducts first,and then the channel,circulates the current.,At light load,the reverse voltage between body diode is much small,once the channel circulates the small current,such that the reverse recovery time in body diode is much long,resulting in primary MOSFETs shoot-through.,肖茫攀增须河币蚂条漱途捕迹姚弱十咙类谆洽殿圈枕理帧呕细料追萄骑祸Designof200WLLCResonantHBDesignof200WLLCResonantHB,Bing Lu,“Investigation of High-density Integrated Solution for AC/DC Conversion of a Distributed Power System”,Ph.D.dissertation,Virginia Tech,2006,scholar.lib.vt.edu/theses/available/etd-06262006-111218/,Bo Yang,“Topology investigation of front end DC/DC converter for distributed power system“Ph.D.dissertation,Virginia Tech,2003,scholar.lib.vt.edu/theses/available/etd-09152003-180228/,References,绣捉戎弥蓖楔彪岁瓢羞萝摹署祖模凸冷函歪浇熟窜履癸溢浓唤颈庚书氢病Designof200WLLCResonantHBDesignof200WLLCResonantHB,Back-up,驼士旁斌行斑鹏偶钳臻棉肢京砧敝帖为增眺冀踢宏汇删侣飞位魔钦质然逊Designof200WLLCResonantHBDesignof200WLLCResonantHB,TI UCC25600 8 Pin Resonant Half Bridge Controller,Features,Adjustable Soft start(1ms to 500ms),Adjustable dead time,Adjustable F,swmax,&F,swmin,(3%accuracy),Io=+1A/-1.5A,Enable(ON/OFF control),Protection functions,Two levels over current protection,auto recovery,latch,Bias voltage UV and OV protection,Over temperature protection,Soft start after all fault conditions,SOT 8 pin package=Easy design and layout,Ready to Order,悉匀棕青臆岔砍休鳞监炕诽秋蒋竹躺眩追系斤闲黔广伺涂作职已咽询蝗烃Designof200WLLCResonantHBDesignof200WLLCResonantHB,Application Circuit,Programmable dead time,Frequency control with minimum/maximum frequency limiting,Programmable soft start with on/off control,Two level over current protection,auto-recovery and latch up,Matching output with 50ns tolerance,折琢刚叶惶郁帅贵儿儡义逻锻缆勘琶县岗途凡麻诵蝴嘘耕奥癌荡毒锋迪勋Designof200WLLCResonantHBDesignof200WLLCResonantHB,Q&A,Thanks!,砸传役碉味订柄看受瞪恫踞隆虑瓷秉罩擎意宰邪情栅洞札承厩真度蜀舵炭Designof200WLLCResonantHBDesignof200WLLCResonantHB,