APG042N01 145A 110V逆变器mos-自动门mos驱动规格书_骊微电子.pdf

APG042N01 N-Channel Shielding-Gate Mosfet剑”。1WERDATA SHEET D Feature 110V,145ARos cONJ EAs 660 mJ Power Dissipation Po 215 w Thermal Resistance from Junction to Case RaJc 0.44/W Junction Temperature TJ 150。CStorage Temperature Tsrn-55150。C深圳市骊微电子科技有限公司铨力半导体代理商APG042N01 剑”。1WERN-Channel Shielding-Ga恒MosfetDATA SHEET MOSFET ELECTRICAL CHARACTERISTICS(T a=25aC unless otherwise noted)Parameter Symbol Test Condition Min Type Max Unit S恤tic Characteristics Drain唱。ur四breakdownvoltage V(BR)DSS Vas=OV,lo=2四川110 116 v Zero gate voltage drain current loss V国110V,VGs=av 1,1A Gate-body leakage current IGss VGs 土20V,Vos=OV 主100nA Gate threshold vottage3】V臼仙Vos=Vi锚，l口2501,1A2 3 4 v Drain-sour田on-r回国ance31Ros司制VGs=1 OV,lo=TOA 3.7 4.2 mo Forward tranoonductan,V8yti阿回Trr ls=70AVos=OV,d li=/dt=100Nus 71 ns R酬”南ereV8ychageQ ls=70AVcs=OV,d li=/dt=100Nus 144 nC Notes:1.Repetitive Rating:pulse width limited by maximum junction恒mperatu陪2.EAS Condition:TJ=25，Voo=50V,Rc=20 C,L=0.5mH3.Pulse Test:pulse width:s:;300阳，duty cycle:s:;2%4.Surface Mounted on FR4 Board,t到O sec深圳市骊微电子科技有限公司铨力半导体代理商APG042N01 剑”。1WERN-Channel Shielding-Ga恒MosfetDATA SHEET Test Circuit&waveform Gate Charge Test Circuit&Waveform Vgs Qg lg J工Charge Resistive Switching Test Circuit&Waveforms RL Vds Vds 立广10%Vgtll.Unclamped Inductive Switching(UIS)Test Circuit&Waveforms Vds-EAR=112 LIRBVo.S.l Id Vds Id l,.,p Vgs工。iode Recovery Test Circuit&Waveforms a,=f ldt1sd Vdd Vds 深圳市骊微电子科技有限公司铨力半导体代理商AIIP。1WERAPG042N01 N-Channel Shielding-Gate MosfetDATA SHEET Typical Electronic and Thermal Characteristics 8 可ff 1ililf f+lifl+:t iv产v十l+：；十lL+I-+-I+iJ t+-!+:+t十.YI-+T十；十!+!-+I+!沂才i+I-+i+VGs,Gate to Source Voltage(V)5 Figure 2.Trans他r Characteristics Figu陪1.On-Region Characteristics 4.0 c E;3.8 c(0.3.6 0:c 3.4吕也3.2 010 5 6 7 8 9 VGs,Gate to Souce Voltage(v)Figura 4.。n-Reais钮neeVs Gata to s。urceVoltage Figura 3.。n-Rasis坦neeVariation vs Drain Current VGS;lQV VDS;SQV v ID;2QA 08642 dE，曲。帽丘。由U2。LFU晤。品。LL c.103”.2 喜102 0 0 1010 90 100 80 20 30 40 50 60 70 Q0,Total Gate Charge(nC)10 Figure 8.Gate Cha咱e Characteristics Figure 5.Capacitan四Charac恰ristics深圳市骊微电子科技有限公司铨力半导体代理商APG042N01 N-Channel Shielding-Gate MosfetTypical Electronic and Thermal Characteristics 1.1 吉1.05 咂。z rn，。皿0.950.9 300 至250。-:;:;20。而曲”150。;100 a.c:i 50 100、，.Q)u c:(1l 0 一 l J I ID=250uA，卢I/v女子，飞F如如 55-25 0 25 50 75 100 125 TJ,Junction Temperture CC)Figure 7.Breakd。，wn Voltage Variation vs Temperature 25 50 75 100 125 Tc,Case Tempertue（）Figure 9.Power Dissipation 150 150 Figure 11.Maximum Safe Operating Area All p。WERDATA SHEET 也2.5 2 ID=SOA VGS=lOV 1.5 气 0 E 0.5。-55-25 0 25 50 75 100 125TJ,Junction Temperture(C)Figure 8.On-Resistance Variation vs Temperature 160 140 20 Figure，。.Drain Current Derating 1000 言100Q)u Q)c 10 0.2 0.4 0.6 0.8 1.0 1.2 Vso,Diode Forward Voltage(V)Figure 12.B。dy-diode Forwa叫Char田cteristics150 1.4 深圳市骊微电子科技有限公司铨力半导体代理商APG042N01 NChannel Shielding-Gate Mosfet Typical Electronic and Thermal Characteristics 重10 0 吕10-,。E 而E 10-2Q).)N 10 3 10-6 104 102 啊，Square Wave Pusle Duration(Sec)IIIP。1WERDATA SHEET 10 深圳市骊微电子科技有限公司铨力半导体代理商APG042N01 剑”。1WERN-Channel Shielding-Ga恒MosfetDATA SHEET T0220C Package Information D cl仨J)江二。丁I.ISymbol Dimensions In Millimeters Dimensions In Inches Min.Max.Min.Max.A 4.400 4.600 0.173 0.181 A1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 D 9.910 10250 0.390 0.404 E 8.950 9.750 0.352 0.384 E1 12.650 13.050 0.498 0.514 e 2.540TYP.0.100 TYP.e1 4.980 5.180 0.196 0.204 F 2.650 2.950 0.104 0.116 H 7.900 8.100 0 31才0 3才9h 0.000 0.300 0.000 0.012 L 12.900 13.400 0.508 0.528 L1 2.850 3.250 0.112 0.128 v 6.900 REF.0.276 REF.3.400 3.800 0.134 0.150 深圳市骊微电子科技有限公司铨力半导体代理商