APG082N01 n沟道mos管100v 100a-电源适配器mos管规格书_骊微电子.pdf

APG082N01 N-Channel Enhancement MosfetFeature100V,100ARDS（ON）8.2mVGS=10V (TYP:6.7m)Split Gate Trench TechnologyLead free product is acquired Excellent R DS（ON）and Low Gate ChargeApplication PWM applicationsLoad SwitchPower managementPackage Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity(PCS)G082N01 APG082N01 TO-220C -1000 ABSOLUTE MAXIMUM RATINGS(Ta=25 unless otherwise noted)Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 25 V Continuous Drain Current(Ta=25)ID 100 A Continuous Drain Current(Ta=100)ID 70 A Pulsed Drain Currenr(1)IDM 320 A Singel Pulsed Avalanche Energy(2)EAS 300 mJ Power Dissipation PD 155 W Thermal Resistance from Junction to Case RJC 1.05/W Junction Temperature TJ 150 Storage Temperature TSTG-55+150 Schematic di gramTO-220C深圳市骊微电子科技有限公司铨力半导体代理商APG082N01 N-Channel Enhancement MosfetMOSFET ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise noted)Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=250A 100-V Zero gate voltage drain current IDSS VDS=100V,VGS=0V-1 A Gate-body leakage current IGSS VGS=20V,VDS=0V-100 nA Gate threshold voltage(3)VGS(th)VDS=VGS,ID=250A 2.0 3.0 4.0 V Drain-source on-resistance(3)RDS(on)VGS=10V,ID=40A-6.7 8.2 m Forward Threshold Voltage gfs VDS=10V,ID=40A-60-S Gate Resistance Rg VDS=VGS=0V,f=1MHz-1.3-Dynamic characteristics Input Capacitance Ciss VDS=50V,VGS=0V,f=1MHz-2435-pF Output Capacitance Coss-380-Reverse Transfer Capacitance Crss-11-Switching characteristics Turn-on delay time td(on)VDD=50V,ID=40A,VGS=10V,RG=3-13-ns Turn-on rise time tr-35-Turn-off delay time td(off)-20-Turn-off fall time tf-15-Total Gate Charge Qg VDS=50V,ID=40A,VGS=10V-47-nC Gate-Source Charge Qgs-9-Gate-Drain Charge Qgd-24-Reverse Recovery Chrage Qrr IF=40A,di/dt=100A/us 50 nC Reverse Recovery Time Trr IF=40A,di/dt=100A/us 48 ns Source-Drain Diode characteristics Diode Forward voltage(3)VDS VGS=0V,IS=20A-1.2 V Diode Forward current(4)IS-75 A Notes:1.Repetitive Rating:pulse width limited by maximum junction temperature2.EAS Condition:TJ=25,VDD=50V,RG=25,L=0.5Mh,IAS=35A3.Pulse Test:pulse width300s,duty cycle2%4.Surface Mounted on FR4 Board,t10 sec深圳市骊微电子科技有限公司铨力半导体代理商APG082N01 N-Channel Enhancement Mosfet深圳市骊微电子科技有限公司铨力半导体代理商APG082N01 N-Channel Enhancement Mosfet深圳市骊微电子科技有限公司铨力半导体代理商APG082N01 N-Channel Enhancement MosfetTO220C Package Information深圳市骊微电子科技有限公司铨力半导体代理商