APG080N12 120v 106a mos管-丝印G080N12规格书参数_骊微电子.pdf

APG080N12 N-Channel Enhancement MosfetFeature 120V,106ARos ON)8.Om Q VGs=10V(TYP:6.Sm Q)Split Gate Trench TechnologyLead free product is acquiredExcellent Ros ON)and Low Gate ChargeApplication PWMappli臼tionsLoad SwitchPower managementPackage Marking and Ordering lnf1。rmati。nDevice Marking G080N12 Device I Device PackageAPG080N12 I T0-220 Reel Size 剑”。1WERDATA SHEET D s Schematic diSgram A以以X0 G080N12 Marking and pin assignment Tape width Quantity(PCS)1000 ABSOLUTE MAXIMUM RATINGS(Ta=25unless otherwise noted)Parameter Symbol Value Unit Drain-Source Voltage Vos 120 v Gate-Source Voltage VGs 20 v Continuous Drain Current(Ta=25）lo 106 A Continuous Drain Current(Ta=100）lo 67 A Pulsed Drain Current IDM 424 A Singel Pulsed Avalanche Energy EAs 480 mJ Power Dissipation Po 147 w Thermal Resistance from Junction to Case ReJc 0.85/W Junction Temperature TJ 150 Storage Temperature TsrG-55-+150 深圳市骊微电子科技有限公司铨力半导体代理商APG080N12 剑”。1WERN-Channel Enhancement MosfetDATA SHEET MOSFET ELECTRICAL CHARACTERISTICS(T a=25unless otherwise noted)Parameter Symbol Tut Condition Min Type M缸Unit static CharacterlsU臼Drain回ur四breakdownvol闻自V(BR)DSS Vos=OV,le=250A 120 v Zero gate voltage drain凶rrentloss Vos=120V,V，国OVA Gate-body lea阳ge current IGSS VGS土20V,V臼OV 土100nA Gate th陪sholdvol闻e(3)Va町th)Vcs=V，田，lc=250A2.0 3.0 4.0 v Drain-sou田on-resis恒neeCS)Ros(on)V回10V,lo=40A 8.5 8.0 mo Dynamic charac饱risticsInput capaci恼n出Q圄 3770 Output Capacitance C曲SVos=BOV,Vcas=OV,f=1MHz 352 pF Reverse Transfer Capac比anee G酶 17 Swi缸hing charactaristi臼Tum-on delay time 阳。”】22 Tum-on ri回timeIr Voo=50V,lo=50A,18 ns Tum-off delay time tdc，响V臼10V,RG=30 49 Tum怦fall time t,19 Total Gate ChageQg 56 Gate-Source Cha咱eQgs VDS=SOV,ID=50A,nC 12 VGS=10V Gate-Drain Cha咱e句d 14 Reverse Recovery Chrage Qrr IF=30A,difdt=1 OOA/us 102 nC Reverse Recovery Time 圄rrrIF=30A,difdt=1 OOA/us BB ns Source-Drain Diode charactariati四Diode Forward voltage V四V臼OV,ls回A1.3 v Diode Forward currentC4 Is 106 A No幅s:1.Repetitive Rating:pul回width limited by maximum junction temperature2.EAS Condition:T J=25，Vco=50V,RG=25 Q,L=0.5Mh3.Pulse Test:pulse width:S300s,duty cycle:S2%4.Surface Mounted on FR4 Boa时，恒10sec深圳市骊微电子科技有限公司铨力半导体代理商APG080N12 剑”。1WERN-Channel Enhancement MosfetDATA SHEET Test Circuit&waveforn冒Gate Charge Test Circuit&Waveform Vgs Qg lgJ工Charge Resistive Sw技ching Test Circuit&Waveforms RL Vd军Vds 90%立J10%V91.J工Uncfamped Inductive Switching(UIS)Test Circuit&Waveforms Vds Id 儿工JVg Vds Id 2 Er,=112 L1 Diode Recovery Test Circuit&Waveforms。衍fldtlsd BVoss.IAP Vdd 深圳市骊微电子科技有限公司铨力半导体代理商IIIP。1WERAPG080N12 N-Channel Enhancement MosfetDATA SHEET PULSE口TESTVOS=10V 80.0 i a g 40.0.Typical Performance Characteristics Vcs=10V 9V av 7V 6V sv 4V 3V 80 E 60 c 40 口。2口100 10.000 2.000 4.000 6.000 8.000 V0,GaleloSource Vollage,V 0.0 0.000 5.0 1.0 2.0 3.0 4.0 V05,Drain-t。S。urce v。ltage,V0 0.0 Figure 2.Transfer Characteristics PULSED TEST Vos=OV，f I 150 25C，I I 1(到DZ c 写u c 10 Figure 1.。utput Characteristics PULSED TEST T1=25 Vcs=10V 10 qdC旦旦。但CO3。”，。“EC白AEEOU1 0 2 0 1.5 Figure 4.B。dy Diode F。rward Voltage vs s。urce Current and Temperature 0.3 0.6 0.9 12 V,0,S。urce-1。Drain v。ltoge,V25 Figure 3.Drain-t。s。urce。n Resistance vs Drain Current 20 10 15 10,Drain Current,A V田SOV，v 17 ，II v 10=20A 5 10 15 20 25 30 35 40 45 50 55 60 Q0,Toto I Gate Chorge,nC 1口口。aoaua吨句，mwawx。3。的。“eooc,s如I I I 阳、Coss仨飞飞t、11 Crs,$I=f=1MHz C旧1：C瞄c,.,=gd 10口10 V05,Draint。Source Voltage,V 10000 1000 1 1 100 10 HhszegoesU Figure 6.Gate Charge Characteristics Figure 5.Capacitance Characteristics 深圳市骊微电子科技有限公司铨力半导体代理商IIIP。1WERAPG080N12 N-Channel Enhancement MosfetDATA SHEET PULSED TEST 由=10V。SCAv/v _,/v 2.4 龟S:;:;-,;1.6 画E星ii 12 z 巴t.叩o!j口8占0.4 v v v v 1日753197 00099 1110口邑星。，墨。EZ固自3。的主ZEOuMm币二EE。Z画”。国。斗目30.95-100 200 Figure 8.Normalized。n Resistance vs-5口050 100 1目T,Juncti。nTemperoture(C)200 Figure 7.Normalized Breakdown Voltage vs Juncti。nTemperature-50 0 50 100 150，Juncti。”Temperature（Junction Temperature 队 200 150;i:c.2 ：100 白I。也,s。50卜 1创 c 80.E _,40 120 0 0 口。1臼Figure 10.Maximum p。wer Dissipation vs Case Temperature 125 50 75 100 Tc,Cose Temperature，25 1臼Figure 9.Maximum c。ntim。us Drain Current vs Case Temperature 125 50 75 1刀T0,Cose Temperature,C 25、I 11，、10s 100s，？飞，飞口1主1ms 1111 Operation in This Area 一is Limited by Roscoo)10ms 1 1111111 SINGLE PULSE T0-25 飞150I 1 1111111 I 1000 100 10 ddc2UE帽口a25 a g 20 回国“6 15 i 10 c 制。口。rl 0.1 0.1 10=SOA 0 2 10口。1 10 100 V05,Dram吨。s。urce v。ltage,V10 4 6 8 V05,Gate-t。S。urce Voltage,V Figure 12.Maximum Safe Operating Area Figure11.Dain-t。Sour，”。n Resistance vs Gate v。ltage and Drain Current 深圳市骊微电子科技有限公司铨力半导体代理商剑”。1WERAPG080N12 N-Channel Enhancement MosfetDATA SHEET 二-，D=T0,/T，口！；目飞，.Tc+P0Mz，c,Re,c ”:i;.Re,c=0.85川 V”i-:-:-=三 In descending odeD-0.5，口3,.01,0.05,0.02,0.口1,single pulse-，旷马v?-Single Pulses I-I 11 I ZE盟”EeEzEEEEENE。zudO.D1 1.00E 04 1.00E+OO Figure 13.Maximum Effective Transient Thermal Impedance,Junctiont。-Case1.00E-01 1.00E-02 Pulse Width(s)1 OOE 03 深圳市骊微电子科技有限公司铨力半导体代理商APG080N12 N-Channel Enhancement Mosfet剑”。1WERDATA SHEET T。220 Package Information 0R c A 问闰9L GG豆 Cl o.1 c E?(DJ 1 2 3 Dlr1enslons In Mllllr1eters DIMer、slons In MllllMete俨5SyMbol 问in”。SyMbol Min Mo.A 9.8 10.2 c 1.2 1.4 R 3.56 3.64 B 6.3 6.7 L 15.7 16.1 Bl 9.0 9.4 b 12.6 13.6 Cl 2.6 bl 9.6 10.6 o.1 0.7 0.9 0.1.22 1.32 c 0.4 0.6 E 2,34 已74C2 4.3 4,7 0.2 1.25 1.45 深圳市骊微电子科技有限公司铨力半导体代理商