APG078N07K 70v mos管封装TO-252丝印G078N07K规格书_骊微电子.pdf

APG078N07K N-Channel Shielding-Gate MosfetFeature 70V,80ARos ON)7.8m QVGs=10V TYP:6.7 m QAdvanced Trench Power MOSFETProvide Excellent Ros(ON)And Low Gate ChargeApplicati。nDC/DC ConverterLoad Switch for Portable DevicesBatteySwitchRectifierPackage Marking and Ordering lnformati。nDevice Marking G078N07K Device I Device Package APG078N07K I T0-252 Reel Size 剑”。1WERDATA SHEET D Schematic diagram D xxxxx G078N07K G s Marking and pin assignment Tape width Quantity(PCS)2500 ABS。LUTE MAXIMUM RATINGS(Ta=25unless。therwise n。ted)Parameter Symbol Value Unit Drain-Source Voltage Vos 70 v Gate-Source Voltage VGs 20 v Continuous Drain Current(Ta=25）lo 80 A Continuous Drain Current(Ta=100）lo 56 A Pulsed Drain Currenr Va町th)Vos=V，田，lo=250A2 3 4 v Drain唱。urceon-resis恒neeCS Ros(an】V田10V,lo=30A 6.7 7.8 mo Forward tranconduc恒ncel3lQFS Vos=1 OV,lo=30A 60 s Dynamic charac幅rist比SInput Capaci恒n四。圄 1466 Output Capacitance Q幽Vos=30V,Ves=OV,f=1MHz 770 pF Reverse T阳nsfer Capacitance G回 55 Swl伽hlng characteristics Tum-on delay回mefdcon)8.4 Tum-on rise time 1r Vos=15V,lo=3A,9.0 Tum-o怦delaytime tel（，而VGS=10V,RG=60 ns 23.6 Tum-o怦fall time t,18 Total Gate ChageQg 28 Gate-Source Charge Qgs VDS=50V,ID=12A,5.2 nC VGS=10V Gate-Drain Charge 句d 6 s。urc:e-Drain Diode chara，曲时，ti四Diode Forward voltageC3l V田V田OV,ls=30A 1.2 v Diode Forward currentC4 Is 80 A N。rtes:1.Repetitive Rating:pulse width limited by maximum junction temperature2.EAS Condition:TJ=25，Voo叫OV,RG=20 o,L=0.5mH,IAS=25A3.Pulse Test:pulse widthS:300s,duty町cles:2%4.Sur如ce Mounted on FR4 Boa时，国10sec深圳市骊微电子科技有限公司铨力半导体代理商APG078N07K 剑”。1WERN-Channel Shielding-Gate MosfetDATA SHEET Test Circuit&Waveform Gate Charge Test Circuit&Waveform Vgs Qg 10V lgJL Charge Resistive Switching Test Circuit&Waveforms 民LVds Vds 90%土l10%Vg之Lnclamped Inductive Swi时ing(UIS)Test Circuit&Waveforms Vds E翩 1/2 u:.,BVos!Id Vc!s 立l Id V9s工Diode Recovery Test Circuit&Wavefoms。布fldtiSd Vdd Typi臼t Electronic and Thermal Characteristics 深圳市骊微电子科技有限公司铨力半导体代理商IIIP。1WERAPG078N07K N-Channel Shielding-Gate MosfetDATA SHEET 111tf tljf t f tlYr+3；二：；：；土；Y十45二t.川f+1户Fvf125 8；。11ttff 1ttYl-;tt 需1501川.,.t/f.;+t+100 111+-fi-Af+(t+-501.！.川；bi+ff .,.;t+。1T仁1-+TfT+5 1 2 3 4 VDS,Drain to Source Voltage(V)Figura 1.On-Region Charac恒ristics芸150c:U 100 c:c 200 50 Figura 2.Transfer Characteristics 0.0（d飞）VCO303而至。H气比!+i-f+ll+i+!+i+i 2l1l1l HH1ITl1Hl1 1H1r1r1忱。tLflJffflll111l.0 0 nU（GE）zmH百Nhz0，ZO。“8 6 4 2 1.4 20 Figure 4.B。dy Diode Forward Vol恒geVs Reverse Drain Current Figure 3.On-Resis饵neeVariation vs Drain Current 一一 VGS=lOV ID=70A 642O A1，4gazA町（刷WOS。3。制帽。”。8 6 4 2（Hha）zgzmwam 50 10 20 30 40 Q9,Total Gate Charge(nC)Figure 6.Gate Cha咱e Characteristics 0 0 Figure 5.Capacitance Characterlstl臼101 0 Typical Electronic and Thermal Characteristics 深圳市骊微电子科技有限公司铨力半导体代理商剑”。1WERAPG078N07K N-Channel Shielding-Gate MosfetDATA SHEET 55 25 0 25 50 75 100 125 150 175 TJ Junction Tempertue。C)2 z。臣1.5 N 主0.5。2.5 同_u.l I.ID=250uA 一_.问，】，.v，v!/，75 100 125 150 17550 25。-55 25 FDFD nunuq 唱tnuOmRMNmwE。z0.9 1.1 Figure 8.。”Resis钮nee Variation vs Temperature（。C)Figure 7.Breakdown Voltage Variation vs Temperature TJ Junction Tempertue160.0 140.0 军120.0 100.0 c:0 80.0 60.0 40.0 20.0 1000斗.，.巾h;,y飞毛二丁言100 (.)c 而 0 175 150 125 100 75 50 0.0 25 10(（。C)Figure 10.Maximum Drain Current vs Case Temperature Tc,Case TempeatueVos,Drain-to-Source Voltage(V)Figure 9.Maximum Safe。perating Area 02 10.言10 c:帽3 至101E 0 Figure刊.Transient Thermal Resp。nse Curve 深圳市骊微电子科技有限公司铨力半导体代理商APG078N07K N-Channel Shielding-Gate Mosfet剑”。1WERDATA SHEET T0-252 Package Information E 82 c A。、飞jJJ 口町，ULAT0-252 Reel Spectification T0-252 且II.B Dimensions Ref.Millimeters Inches Min.Typ.Max.Min.Typ.Max.A 2.10 2.50 0.083 0.098 A2.。0.10。0.004 B 0.66 0.86 0.026 0.034 82 5.18 5.48 0.202 0.216 c 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 D1 5.30REF 0.209REF E 6.40 6.80 0.252。.268E1 4.63 0.182 G 4.47 4.67 0.178 0.184 H 9.50 0.700.374 0.421 L 1.09 1.2 0.归30.048 L2 1.35 1.65 0.053 0.065 V1 77V2 o5osT 4一Dimensions Ref.Mii町、，幅幅Inches Min.丁yp.Max.Mn.Typ.M皿w 15皿16.00 16.10。.626。.6300.634 E 1.筒1.75 1.85 0.065 0.时l90.073 F 7.40 7剧7剧目，2910.295。2锦回1.40 才团1.60 0.由5。.059队063D1 1.40 1剧1.60 0.由S0.059 0.53PO a田4.00 4.10 0.1!剖口.157口.161P1 7.90 8.00 8.10 0.311 0.315 0.319 同1剧2.00 2.10 0.075。.0790.083 AO 6.部6.90 7.00 0.270 口：n斗0.276 国10.45 悦目10.60 0.411 OA13 OA17 阳2.回2.78 2.”0.105。.1090.113 T 0.24 0.27 0.009 0.011 回0.10 0.004 饱问39.80 40.00 40.20 1.567 1.575 1回归B-B20 节一 深圳市骊微电子科技有限公司铨力半导体代理商