原子层沉积法的原理和应用.ppt

PPTDESIGNAtomic Layer Deposition (ALD)杨杨超、包超、包峰、方峰、方聪、蒋博瀚、马聪、蒋博瀚、马红石红石李勇辉、王李勇辉、王谦、徐谦、徐晨、于晨、于浩、浩、赵灿灿赵灿灿ShanghaiInstituteofCeramicsSyntheticChemistryofMaterialsPPTDESIGNOutlineOutline1.IntroductiontoALD2.Classicalmodels:ALDofAl2O33.ALDandCVD4.ApplicationsofALD(1)Coatingsonhighaspectratiostructures(2)CoatingsonNanoparticles(3)CombinationofCNT(4)PlasmaALD5.ExpectationsandchallengeinALDPPTDESIGN2.Classicalmodels:ALDofAl2O3TheoverallreactionforAl2O3ALD 2Al(CH3)3+3H2O Al2O3+3CH4 H=376 kcal ThesurfacechemistryduringAl2O3ALD (a)AlOH*+Al(CH3)3 AlOAl(CH3)2*+CH4 (b)AlCH3*+H2O AlOH*+CH4 PPTDESIGNCharacters5HighrepeatabilityandexpansibilityHighrepeatabilityandexpansibility6SubstrateSubstrate（LargeLargeandhighaspectratioandhighaspectratio）4Pinhole-freefilmsPinhole-freefilms3ConformaldepositionConformaldeposition2Self-limitingSelf-limiting1AtomiclevelcontrolAtomiclevelcontrol1.IntroductiontoALDAtomiclayerdeposition（ALD）atomiclevelcontroloffilmdepositionPPTDESIGN3.ComparisonofALDandCVDSchematicpressureprofileduringtheALDandCVDprocessSeung-Mo Lee et al.,ChemPhysChem,12,791-798(2011)PPTDESIGN3.ComparisonofALDandCVDSequential Sequential introduction of introduction of precursorsprecursorsSynchronousSynchronousintroduction of introduction of precursorsprecursorsALDCVDBetter step Better step coveragecoverageExisting Existing shadowing effectsshadowing effectsAAtomictomic level level controlcontrolI cantI cantPPTDESIGN12M.Knaut,et al.Microelectron Eng,107,80-83(2013)4.1CoatingsonhighaspectratiostructuresCoatingonstep-likesructures1Coatingonmulti-porestructures2PPTDESIGN4.2CoatingsonnanoparticlesPSspheresselfassembledALDofTiCl4andH2OIonmillingEtchingPShemispheresAnnealingXu Dong Wang et al.,Nano letters Vol.4,No.11(2004)PPTDESIGN4.2CoatingsonnanoparticlesALDCyclesBowlThicknessPSSpheresBowlSizePPTDESIGN4.3CombinationofCNTandsuper-blackcoatingsPPTDESIGNSchematic illustration of the ALD and CVD process for the synthesis of CNT arraysSchematic representation of Al2O3 ALD coating on monodispersed NPs.4.3CombinationofCNTandsuper-blackcoatingsKai Zhou,et al.,Nanoscale Res Lett,5:1555-1560(2010)Xin Wang,et al.,ACS Appl.Mater.Interfaces,3:4180-4184(2011)PPTDESIGNImprovedmaterialpropertiesfilm density,impurity content,electronic propertiesDepositionatreducedsubstratetemperaturesIncreasedchoiceofprecursorsandmaterialsGoodcontrolofstoichiometryandcomposition operating pressure,power,exposure time,biasing voltageIncreasedgrowthrate4.4MeritsofPlasma-AssistedALDN.Leick,J.Vac.Sci.Technol.A 29,021016(2011)vMeritsPPTDESIGNb.DirectplasmaALDc.RemoteplasmaALDd.Directplasmareactorwithmesha.Radical-enhancedALD4.4Plasma-AssistedALDConfigurationsAssistinganALDprocessbymeansofaplasmastep:Fig Various reactor configurations for plasma-assisted ALDN.Leick,J.Vac.Sci.Technol.A 29,021016(2011)PPTDESIGNSteven M.George,Chemical Reviews,110,111-131(2010)ChallengesControllingthedosagesDifferentmulti-metaldepositionDifferentoxidedopeddepositionDecomposingReasonablevaporpressureReactionisbetweentheprecursorsandthematrixesAppliedtothemassproductionLowdepositionrate100-300nm/h2.Chemicalrequirements1.Lowdepositionrate3.Complexity5.1ChallengesofALDPPTDESIGN ThefutureprospectsforALDareverypromising.VariousmaterialscanbedepositedusingALDtechniques.5.2ExpectationsofALDIdeas worth spreadingThank YouMerry Christmas!.