光刻机结构和工作原理专题培训课件.ppt

单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,Prof.Shiyuan Liu,Page,*,讲授内容,第一讲：微电子制造工艺流程（回顾）,第二讲：微电子制造装备概述,光刻工艺及基本原理,第三讲：光刻机结构及工作原理,(1),第四讲：光刻机结构及工作原理,(2),上讲内容：完整的,IC,制造工艺流程,上讲内容：微电子制造装备概述,加法工艺,减法工艺,图形转移工艺,辅助工艺,掺杂,扩散,离子注入,薄膜,氧化,化学气相淀积,溅射,外延,刻蚀,湿法刻蚀,干法刻蚀,抛光及清洗,化学机械平坦化,清洗,图形转移,光刻,测试及封装,测试,封装,后道工艺,扩散炉,离子注入机,退火炉,氧化炉,CVD,反应炉,溅射镀膜机,外延设备,湿法刻蚀机,反应离子刻蚀机,光刻机,涂胶显影设备,CMP,抛光机,硅片清洗机,测试设备,划片机,键合机,上讲内容：光刻工艺流程,光刻工艺的,8,个基本步骤,气相成底膜,旋转涂胶,软烘,对准和曝光,曝光后烘焙,显影,坚膜烘焙,显影检查,上讲内容：光刻与光刻机,对准和曝光在光刻机,(Lithography Tool),内进行。,其它工艺在涂胶显影机,(Track),上进行。,本讲内容：光刻机结构及工作原理,光刻机简介,光刻机结构及工作原理,光刻机简介,*,微电子装备,芯片设计能力,芯片制造与制造设备,芯片测试与测试设备,设备是信息产业的源头：,我们开发设备、设备制造芯片、芯片构成器件、器件改变世界！,光刻机简介,*,摩尔定律,Intel,创始人之一摩尔,1964,年提出，大约每隔,12,个月：,1).,芯片能力增加一倍、芯片价格降低一倍；,2).,广大用户的福音、行业人员的噩梦。,芯片集成密度不断提升、光刻分辨率的不断提升！,*2006,国际半导体技术路线图,(ITRS),原理研究,样机研发,产品量产,持续改进,光刻机简介,*,光刻机的作用,光刻机是微电子装备的龙头,技术难度最高,单台成本最大,决定集成密度,光刻机是源头中的龙头！,光刻机简介,光刻工艺流程,光刻机简介,Lithography=Transfer the pattern of circuitry from a mask onto a wafer.,*,对准曝光工作流程,光刻机简介,光刻机简介,光刻机简介,Development of lithography system,*,光刻机发展路线图,1,光刻机简介,*,光刻机发展路线图,2,光刻机简介,光刻机三巨头,光刻机简介,光刻机原理,Reticle(Mask),Wafer,Light,Lens,Photoresist,wafer,die,Image,(on reticle),Image,(on wafer),Cell,光刻机原理,硅片,(wafer),单晶硅芯棒直径可达,300mm,长度可达,30feet(9m),，重量可达,400kg,。,用金刚石锯，将芯棒切成薄圆,片，即晶片,(wafer),。,标准晶片尺寸和厚度为：,100mm(4”)x 500,m,150mm(6”)x 750,m,200mm(8”)x 1mm,300mm(12”)x 750,m,硅片,Wafer type:,SEMI,JEIDA,Diameter,：,8 inch-200mm,12 inch 300mm,Notch,：,Y/N,Flat edge length,Clearance,Round,Flat,SEMI=Semiconductor Equipment and Materials International,JEIDA=Japan Electronic Industries Development Association,光刻机重要评价指标,CD Line width,（线宽）,Overlay,（套刻精度）,Field size,（场尺寸）,Throughput,（生产率）,X,Y,Wph,CD=Critical Dimension,光刻机重要设计指标,Numerical Aperture,of Projection Lens,0.750.50,Litho.Resolution(Lines/Spaces),100nm,Image Size,22mm,8mm,Magnification,-0.25,Depth of Focus,0.60,m(130nm resolution),0.50,m(100nm resolution),Reticle pattern size,88mm128mm,Exposure field size on wafer(max),22mm 32mm,Scanning speed(max),reticle stage,wafer stage,1000mm/s,250mm/s,*,光刻机,(,汞灯,),光刻机总体结构,*,光刻机,(,激光器,),光刻机总体结构,Step and Scan System,193 nm Excimer Laser Source,Computer Console,Exposure Column,(Lens),Wafer,Reticle,(Mask),光刻机总体结构,自动对准系统,投影物镜系统,框架减振系统,掩模传输系统,调平调焦测量系统,照明系统,工件台系统,掩模台系统,硅片传输系统,环境控制系统,整机控制系统,整机软件系统,光刻机结构及工作原理,曝光系统,(,照明系统和投影物镜,),工件台掩模台系统,自动对准系统,调焦调平测量系统,掩模传输系统,硅片传输系统,环境控制系统,整机框架及减振系统,整机控制系统,整机软件系统,光刻机结构：曝光系统,*,曝光系统,激光器,/,汞灯,提供光源,照明系统,均匀照明掩模,投影物镜,高分辨率成像,光刻机结构：曝光系统,*,曝光系统总体结构,光刻机结构：曝光系统,*,曝光系统工作原理,光刻机结构：曝光系统,*,曝光系统结构,1,光刻机结构：曝光系统,*,曝光系统结构,2,光刻机结构：曝光系统,*,曝光波长,汞灯：,g-Line(453 nm),、,h-Line(405 nm),、,i-Line(365 nm),准分子激光器：,KrF(248 nm),、,ArF(193 nm),、,F2(157 nm),极紫外光源：,EUV(13 nm),曝光波长影响,光源技术：,中心波长、光谱带宽、输出功率,光学系统：,光学设计、光学材料、光学镀膜,光刻工艺：,光刻胶、工艺参数,光刻机结构原理：曝光系统,*,汞灯光源,光刻机结构：曝光系统,*,激光器,中心波长,193.365 nm,波长带宽,0.3 pm,脉冲频率,4000 Hz,脉冲能量,5 mJ,输出功率,20 W,光刻机结构：曝光系统,*,离轴照明,光刻机结构：曝光系统,顶部模块,(Top Modular),光刻机结构：曝光系统,*,刀口狭缝,Slit,光刻机结构：曝光系统,*,投影物镜,典型的投影物镜：,-30,块镜片,-60,个光学表面,-0.8m,最大直径,-500kg,重量,wafer,v,v,v,v,v,v,v,Objective,lens,reticle,Condenser,lens,Light,source,Aperture,stop,光刻机工作原理：成像原理,Imaging Principle:Optical Projection,Imaging Principle:Fourier Optics,object,NA,=n sin,i,Numerical Aperture,Projection Lens,Entrance Pupil,NA,=,N,umerical,A,perture=,Angular Measure of Lens Size,=max.Acceptance angle(at object),i,=max.acceptance angle(at image),(wafer),(reticle),Image,Definition of Numerical Aperture(NA),Diffraction,intensity,position,0 order,-1 order,+1 order,0,+1,-1,-2,+2,0,+1,-1,-2,+2,+3,-3,sin,a,=,n,l,pitch,Illumination of a Periodic Grating,n=order#,n=0,n=-/+1,n=-/+3,Diffraction Orders,n=0,n=1,n=3,Reticle level,Wafer level,DC bias,Resist,Zero and+1,st,order waveform,Zero and 3,rd,order waveform,Diffraction Orders,Zero order waveform,Assembled image,Diffracted Image,Entrance,pupil of,the lens,-1,0,+1,-3,+3,Recombination of Orders,A grating diffracts the light in orders.,The orders contain information about the pattern on the grating.,A lens can recombine the orders to form an image of the wafer.,-5,-7,+7,+5,sum,+,First order,Third order,Recombination of Orders,Zero order,Recombination of Orders,Image,Perfect Image,sum of the orders,Amplitude,Amplitude Wafer,Fourier Coefficients,-0.4,-0.2,0,0.2,0.4,0.6,0.8,0,1,2,3,4,5,6,7,8,9,10,Amplitude,Order number,-0.4,-0.2,0,0.2,0.4,0.6,0.8,0,1,2,3,4,5,6,7,8,9,10,Order number,Amplitude,-3 -1 0 +1 +3,-1 0 +1,-3,+3,-0.4,-0.2,0,0.2,0.4,0.6,0.8,0,1,2,3,4,5,6,7,8,9,10,Amplitude,Order number,Zero order,Criterion to Form an Image,Only the zero order is not enough,to form an image.(there is only a“DC level”),There must be,at least two orders captured by the lens,.,This is also known as,Abbe theorem,.,Perfect Image,sum of the orders,Diffraction in&Recombination of Orders,The grating(mask)transverse the light into orders.,The lens captures these orders to form an image.,-1,+1,0,-3,+3,Depth of Focus(1),Image in focus.,Depth of Focus(DOF):the area near the focus plane where the orders are near enough to give constructive interference.,Assembled image,Diffracted Image,Entrance,pupil of,the lens,-1,0,+1,-3,+3,Depth of Focus(2),-1th Order,+1th Order,0th Order,DOF,DOF,Long wavelength,Short wavelength,Resolution:The smallest printable lines,NA,+,1,0,-,1,Resolution:Coherent Illumination,R,No imaging!,+1 0-1,+1 0 -1,sin,a,=,n,l,pitch,pitch=,l,sin,a,R=k,l,NA,Lithography resolution&depth of focus,光刻机原理：分辨率,光刻分辨率影响因素,曝光波长,l,数值孔径,NA,工艺系数,k,1,R=k,1,l,NA,照明光源（减小波长,l),Source,Wavelength(nm),CD,Hg-Xe lamp,e-line(546 nm),g-line(436 nm),for 0.6-0.7 um line width,h-line(405 nm),i-line(365 nm),for 0.5 um and 0.35 um,KrF excimer laser,248nm,for 0.25 um and 0.18 um,ArF excimer laser,193nm,for 0.13 um and 0.10 um,F,2,laser,157nm,for sub-0.10 um,i-line,h-line,g-line,e-line,浸液式光刻（提高,NA),数值孔径,浸液技术,分辨率增强技术,RET=Resolution Enhancement Technique=,分辨率增强技术,离轴照明,(,方向）,相移掩模,(,相位,),光学校正,(,强度,),R=k,1,l,NA,照明与掩模,传统照明,环形照明,二极照明,四极照明,二元掩模,移相掩模,光学校正,Partial Coherent Illumination,Optical projection in Lithography,wafer,v,v,v,v,v,v,v,Objective,lens,reticle,Light,source,v,Condenser,lens,Aperture stop,s,=,partial coherence factor=effective source filling factor in the projection optics pupil,Beyond the Resolution Limit,No imaging,Imaging!,s,s,=fraction of pupil that is filled with zeroth order,NA,Coherent,Partial Coherence,+1 0-1,+1 0-1,+1 0 -1,+1 0 -1,NA=0.70,s,=0.85/0.55,BF-0.1,BF+0.1,BF+0.2,Best Focus,BF-0.2,120nm,Best Focus,110nm,120nm and 110nm Dense Lines using Binary Mask,wafer,-2 order,-1 order,+2 order,+1 order,0 order,reticle,lens,wafer,-2 order,-1 order,+2 order,+1 order,0 order,reticle,lens,wafer,-2 order,-1 order,+2 order,+1 order,0 order,reticle,lens,Conventional Illuminationresolution limits,Linewidth=90nm Linewidth=65nm Linewidth=45nm,Illuminator,同轴照明,离轴照明,Introduction to Mask,Mask components,普通铬,掩模,移相掩模,移相掩模,(PSM,Phase Shifting Mask),光学临近效应校正,OPC,OPC,种类,Mask,版图设计,设计目标版图,OPC,后版图,实际掩模,曝光图形,步进光刻机原理,Stepper,步进光刻机原理,扫描光刻机原理,Scanner,扫描光刻机原理,Stepper,Scanner,曝光视场与投影镜头视场,曝光剂量控制,投影物镜波像差,波像差,(Wavefront Aberration),是指经过投影物镜后的实际波面与理想波面之间的光程差,典型的投影物镜：,-30,块镜片,-60,个光学表面,-0.8m,最大直径,-500kg,重量,波像差是衡量投影物镜性能的重要指标！,波像差的,Zernike,多项式表示,26,27,28,29,30,31,32,33,34,35,36,25,24,23,22,21,20,19,18,17,16,15,14,12,13,11,10,9,8,7,6,5,4,3,2,1,spherical,coma,astigmatism,3-foil,4-foil,5-foil,0,1,2,3,4,5,As polynomial expansion:,Zernike polynomials:,f,n,(,),Zernike coefficients:,Z,n,Intention of Wavefront Metrology,(1)On-line measurement,(2)Measure Zernike coefficients up to Z37,(3)Suitable to partial coherent illumination,Effect of aberrations,All aberrations:Reduction of contrast,Even aberrations:,Axial image shift,Axial asymmetries,Odd aberrations:,Lateral image shift,Lateral asymmetries,Odd aberration,Even aberration,Measurement process of the novel technique,Agreement between input and measured wavefronts,