电子技术-芯片资料-74HC51.pdf

TL/F/5302MM54HC51/MM74HC51 Dual AND-OR-Invert GateMM54HC58/MM74HC58 Dual AND-OR GateJanuary 1988MM54HC51/MM74HC51 Dual AND-OR-Invert GateMM54HC58/MM74HC58 Dual AND-OR GateGeneral DescriptionThese gates utilize advanced silicon-gate CMOS technologyto achieve operating speeds similar to LS-TTL gates withthe low power consumption of standard CMOS integratedcircuits.All gates have buffered outputs,providing highnoise immunity and the ability to drive 10 LS-TTL loads.The54HC/74HC logic family is functionally as well as pin-outcompatible with the standard 54LS/74LS logic family.Allinputs are protected from damage due to static discharge byinternal diode clamps to VCCand ground.FeaturesYTypical propagation delay:10 nsYWide power supply range:26VYLow quiescent supply current:20 mA maximum(74 Series)YLow input current:1 mA maximumYHigh output current:4 mA minimumConnection DiagramsDual-In-Line PackageTL/F/53021Top ViewOrder Number MM54HC51 or MM74HC51Dual-In-Line PackageTL/F/53022Top ViewOrder Number MM54HC58 or MM74HC58C1995 National Semiconductor CorporationRRD-B30M105/Printed in U.S.A.Absolute Maximum Ratings(Notes 1&2)If Military/Aerospace specified devices are required,pleasecontacttheNationalSemiconductorSalesOffice/Distributors for availability and specifications.Supply Voltage(VCC)b0.5 toa7.0VDC Input Voltage(VIN)b1.5 to VCCa1.5VDC Output Voltage(VOUT)b0.5 to VCCa0.5VClamp Diode Current(IIK,IOK)g20 mADC Output Current,per pin(IOUT)g25 mADC VCCor GND Current,per pin(ICC)g50 mAStorage Temperature Range(TSTG)b65C toa150CPower Dissipation(PD)(Note 3)600 mWS.O.Package only500 mWLead Temp.(TL)(Soldering 10 seconds)260COperating ConditionsMinMaxUnitsSupply Voltage(VCC)26VDC Input or Output Voltage0VCCV(VIN,VOUT)Operating Temp.Range(TA)MM74HCb40a85CMM54HCb55a125CInput Rise or Fall TimesVCCe2.0V(tr,tf)1000nsVCCe4.5V500nsVCCe6.0V400nsDC Electrical Characteristics(Note 4)TAe25C74HC54HCSymbolParameterConditionsVCCTAeb40 to 85CTAeb55 to 125CUnitsTypGuaranteed LimitsVIHMinimum High Level2.0V1.51.51.5VInput Voltage4.5V3.153.153.15V6.0V4.24.24.2VVILMaximum Low Level2.0V0.50.50.5VInput Voltage*4.5V1.351.351.35V6.0V1.81.81.8VVOHMinimum High LevelVINeVIHor VILOutput VoltagelIOUTls20 mA2.0V2.01.91.91.9V4.5V4.54.44.44.4V6.0V6.05.95.95.9VVINeVIHor VILlIOUTls4.0 mA4.5V4.23.983.843.7VlIOUTls5.2 mA6.0V5.75.485.345.2VVOLMaximum Low LevelVINeVIHor VILOutput VoltagelIOUTls20 mA2.0V00.10.10.1V4.5V00.10.10.1V6.0V00.10.10.1VVINeVIHor VILlIOUTls4.0 mA4.5V0.20.260.330.4VlIOUTls5.2 mA6.0V0.20.260.330.4VIINMaximum InputVINeVCCor GND6.0Vg0.1g1.0g1.0mACurrentICCMaximum QuiescentVINeVCCor GND6.0V2.02040mASupply CurrentIOUTe0 mANote 1:Absolute Maximum Ratings are those values beyond which damage to the device may occur.Note 2:Unless otherwise specified all voltages are referenced to ground.Note 3:Power Dissipation temperature derating plastic N package:b12 mW/C from 65C to 85C;ceramic J package:b12 mW/C from 100C to 125C.Note 4:For a power supply of 5Vg10%the worst case output voltages(VOH,and VOL)occur for HC at 4.5V.Thus the 4.5V values should be used when designingwith this supply.Worst case VIHand VILoccur at VCCe5.5V and 4.5V respectively.(The VIHvalue at 5.5V is 3.85V.)The worst case leakage current(IIN,ICC,andIOZ)occur for CMOS at the higher voltage and so the 6.0V values should be used.*VILlimits are currently tested at 20%of VCC.The above VILspecification(30%of VCC)will be implemented no later than Q1,CY89.2AC Electrical CharacteristicsVCCe5V,TAe25C,CLe15 pF,tretfe6 nsSymbolParameterConditionsTypGuaranteedUnitsLimittPHL,tPLHMaximum Propagation1020nsDelayAC Electrical CharacteristicsVCCe2.0V to 6.0V,CLe50 pF,tretfe6 ns(unless otherwise specified)TAe25C74HC54HCSymbolParameterConditionsVCCTAeb40 to 85CTAeb55 to 125CUnitsTypGuaranteed LimitstPHL,tPLHMaximum Propagation2.0V63125158186nsDelay4.5V13253237ns6.0V11212732nstTLH,tTHLMaximum Output Rise2.0V307595110nsand Fall Time4.5V8151922ns6.0V7131619nsCPDPower Dissipation(per AND-OR-Gate)20pFCapacitance(Note 5)CINMaximum Input5101010pFCapacitanceNote 5:CPDdetermines the no load dynamic power consumption,PDeCPDVCC2faICCVCC,and the no load dynamic current consumption,ISeCPDVCCfaICC.3MM54HC51/MM74HC51 Dual AND-OR-Invert GateMM54HC58/MM74HC58 Dual AND-OR GatePhysical Dimensionsinches(millimeters)Order Numbers MM54HC51J,MM54HC58J,MM74HC51J,MM74HC58JNS Package J14AOrder Numbers MM74HC51N,MM74HC58NNS Package N14ALIFE SUPPORT POLICYNATIONALS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONALSEMICONDUCTOR CORPORATION.As used herein:1.Lifesupportdevicesorsystemsaredevicesor2.A critical component is any component of a lifesystems which,(a)are intended for surgical implantsupport device or system whose failure to perform caninto the body,or(b)support or sustain life,and whosebe reasonably expected to cause the failure of the lifefailure to perform,when properly used in accordancesupport device or system,or to affect its safety orwith instructions for use provided in the labeling,caneffectiveness.be reasonably expected to result in a significant injuryto the user.National SemiconductorNational SemiconductorNational SemiconductorNational SemiconductorCorporationEuropeHong Kong Ltd.Japan Ltd.1111 West Bardin RoadFax:(a49)0-180-530 85 8613th Floor,Straight Block,Tel:[phone]Arlington,TX 76017Email:Ocean Centre,5 Canton Rd.Fax:[phone]Tel:[phone]Deutsch Tel:(a49)0-180-530 85 85Tsimshatsui,KowloonFax:1(800)737-7018EnglishTel:(a49)0-180-532 78 32Hong KongFran3ais Tel:(a49)0-180-532 93 58Tel:[phone]ItalianoTel:(a49)0-180-534 16 80Fax:[phone]National does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.