长电二三极管CESD5V0D1 esd静电保护二极管-CESD5V0D1规格书参数_骊微电子.PDF

SOD-123 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOD-123 Plastic-Encapsulate DiodesCESD5V0D1 Uni-direction ESD Protection DiodeDESCRIPTIONDesigned to protect voltage sensitive electronic components from ESD and other transients.Excellent clamping capability,low leakage,and fast response time provide best in class protection on designs that are exposed to ESD.The combination of small size,high level of ESD protection makes them a flexible solution for applications such as HDMI,Display Port TM,and MDDI interfaces.It is designed to replace multiplayer varistors(MLV)in consumer equipments applications such as mobile phone,notebook,PAD,STB,LCD TV etc.FEATURESUni-directional ESD protection of one lineReverse standoff voltage:5VLow reverse clamping voltageLow leakage currentExcellent package:2.7mm1.6mm1.1mmFast response timeJESD22-A114-B ESD Rating of class 3B per humanbody modelIEC 61000-4-2 Level 4 ESD protectionAPPLICATIONS Computers and peripheralsAudio and video equipmentCellular handsets and accessoriesPortable electronicsOther electronics equipments communi-cation systems MARKING KE=Device code The marking bar indicates the cathode Front side 深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商CHANGJIANG ELEC.TECH.CESD5V0D1MAXIMUM RATINGS(Ta=25 unless otherwise noted)ParameterSymbol LimitUnitIEC 61000-4-2 ESD Voltage Air ModelContact ModelVESD(1)25 kV 25 JESD22-A114-B ESD VoltagePer Human Body Model16 ESD Voltage Machine Model0.4 Peak Pulse Power PPP(2)170WPeak Pulse Current IPP(2)13ALead Solder Temperature Maximum(10 Second Duration)TL260 Junction Temperature Tj150 Storage Temperature Range Tstg-55 +150(1).Device stressed with ten non-repetitive ESD pulses.(2).Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5.ESD standards complianceIEC61000-4-2 Standard JESD22-A114-B Standard Contact Discharge Air Discharge Level Test Voltage kV Level Test Voltage kV 12122424363848415ESD Class Human Body Discharge V 0 0249 1A 1B 1C 250499 500999 10001999 220003999 3A 3B 40007999 800015999 ESD pulse waveform according to IEC61000-4-2 8/20s pulse waveform according to IEC 61000-4-5 深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商CHANGJIANG ELEC.TECH.CESD5V0D1 ELECTRICAL PARAMETERV-I characteristics for a uni-directional TVSELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified)ParameterSymbol Test conditionsMin Typ Max UnitReverse stand off voltage VRWM（1）5 VReverse leakage current IR VRWM=5V1 A Breakdown voltage V(BR)IT=1mA6.2 7.3 VClamping voltage VC（2）IPP=13A13 VForward voltage VF IF=10mA 0.9 VJunction capacitance CJ VR=0V,f=1MHz95 pF(1).Other voltages available upon request.(2).Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5 SymbolParameterVC Clamping Voltage IPP IPP Peak Pulse Current VBR Breakdown Voltage IT IT Test Current IR Reverse Leakage Current VRWM VRWM Reverse Standoff Voltage VF Forward Voltage IF IF Forward Current 深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商CHANGJIANG ELEC.TECH.CESD5V0D1TYPICAL CHARACTERISTICS 01234540506070809010003691215369121540050060070080090010000.11101000246810020406080100Ta=25f=1MHzCapacitance Characteristics Ta=25tp=8/20usCLAMPING VOLTAGE VC(V)VC -IPPREVERSE PEAK PULSE CURRENT IPP(A)PulsedTa=100Ta=25FORWARD CURRENT IF (mA)FORWARD VOLTAGE VF (V)Forward Characteristics REVERSE CURRENT IR (mA)REVERSE VOLTAGE VR (V)Ta=25Ta=100PulsedReverse Characteristics REVERSE VOLTAGE VR (V)JUNCTION CAPACITANCECJ (pF)深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商CHANGJIANG ELEC.TECH.PACKAGE OUTLINE AND PAD LAYOUT INFORMATIONSOD-123 Package Outline Dimensions SOD-123 Suggested Pad Layout MinMaxMinMaxA1.0501.2500.0410.049A10.0000.1000.0000.004A21.0501.1500.0410.045b0.4500.6500.0180.026c0.0800.1500.0030.006D1.5001.7000.0590.067E2.6002.8000.1020.110E13.5503.8500.1400.152LL10.2500.4500.0100.01808080.500 REF0.020 REFSymbolDimensions In MillimetersDimensions In Inches CESD5V0D1深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商CHANGJIANG ELEC.TECH.TAPE AND REEL INFORMATION CESD5V0D1深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商