双向可控硅bt131-bt131可控硅管脚及参数_骊微电子.pdf

UTC BT131 TRIAC TRIACS LOGIC LEVEL DESCRIPTION Passivated,sensitive gate triaces in a plastic envelope,intended for use in general purpose bidirectional switching and phase control applications.These devices are intended to be interfaced directly to microcontrollers.logic integrated circuits and other low power gate trigger circuits.SYMBOL MT2MT1GTO-9211:MT1 2:GATE 3:MT2ABSOLUTE MAXIMUM RATINGS PARAMETERSYMBOL RATINGS UNITRepetitive Peak Off-State Voltage BT131-500 BT131-600 BT131-800 VDRM 500*600*800*V RMS On-State Current Full Sine Wave;Tlead51C IT(RMS)1ANon-Repetitive Peak On-State Current(Full Sine Wave;Tj=25C prior to surge)t=20ms t=16.7ms ITSM 16 17.6 A Circuit Fusing(t=10ms)I2t1.28 A2s Repetitive Rate of Rise of On-State Current after Triggering ITM=1.5A,IG=0.2A,dIG/dt=0.2A/s T2+G+T2+G-T2-G-T2-G+dIT/dt 50 50 50 10 A/s Peak Gate Voltage VGM5VPeak Gate Current IGM2APeak Gate Power PGM5WAverage Gate Power(over any 20ms period)PG(AV)0.5WOperating Junction Temperature Tj 125 C Storage temperature Tstg-40150C*Although not recommended,off-state voltages up to 800V may be applied without damage,but the triac may switchto the on-state.The rate of rise of current should not exceed 3 A/s.深圳市骊微电子科技有限公司UTC BT131 TRIAC THERMAL RESISTANCES PARAMETERSYMBOL MIN TYP MAX UNITThermal Resistance Junction to Lead Full Cycle Half Cycle Rth j-lead 60 80 K/W Thermal Resistance junciton to Ambient(PCB mounted;lead length=4mm)Rth j-lead 150 K/W ELECTRICAL CHARACTERISTICS(Tj=25C,unless otherwise specified)PARAMETERSYMBOLTEST CONDITIONS MIN TYP MAX UNITSTATIC CHARACTERISTICS Gate Trigger Current IGT VD=12V,IT=0.1A T2+G+T2+G-T2-G-T2-G+0.4 1.3 1.4 3.8 3 3 3 7 mA Latching Current IL VD=12V,IGT=0.1A T2+G+T2+G-T2-G-T2-G+1.2 4.0 1.0 2.5 5 8 5 8 mA On-State Voltage Latching Current VT IT=2.0A 1.2 1.5VGate Trigger Voltage VGT VD=12V,IT=0.1A VD=400V,IT=0.1A,Tj=125C 0.2 0.7 0.3 1.5 V Off-state Leakage Current ID VD=VDRM(max),Tj=125C 0.1 0.5 mADYNAMIC CHARACTERISTICS Holding Current IH VD=12V,IGT=0.1A1.3 5 mACritical Rate of Rise ofoff-state Voltage dVD/dt VDM=67%VDRM(max),Tj=125C Exponential waveform,RGK=1k 5 15 V/s Gate Controlled Turn-on Time tgt ITM=1.5A,VD=VDRM(max),IG=0.1A dIG/dt=5A/s 2 s 深圳市骊微电子科技有限公司UTC BT131 TRIAC TYPICAL CHARACTERISTICS 1ms100us10us1000T/sFigure 2.Maximum Permissible Non-repetitivePeak On-state Current ITSM,vs Pulse Widthtp,for Sinusoidal Currents,tp 20ms1010010.40.60.80.201.40.4IT(RMS)/AFigure 1.Maximum on-state Dissipation.Ptot vs RMS On-state Current,IT(RMS),Where=conduction Angle.101.21.20.80.60.210ms100ms100150-505001.20.4Tsp/0.810.60.20104119110125107113116122Ptot/WTsp(max)/C=180=120=90=60=30Figure 4.Maximum Permissible RMS Current IT(RMS)vs Lead Temperature TleadIT(RMS)/A108ITSM/AITITSMtimeTj initial=25maxdIT/dt limitT2-G+quadrant31Surge Duration/S2.02.51.50.50Figure 5.Maximum Permissible Repetitive RMS on-stateCurrent IT(RMS),vs Surge Duration,for SinusoidalCurrents,f=50Hz;Tlead 51IT(RMS)/A0.010.1110124Number of Cycles at 50Hz810620Figure 3.Maximum Permissible Non-Repetitivepeak on-state Current ITSM,vs Number of Cycles,for Sinusoidal Currents,f=50Hz10100ITSM/A11000ITtimeITSMTj initial=25max100150-505001.60.8Tj/1.21.410.60.4Figure 6.Normalised Gate Trigger Voltage VGT(Tj)/VGT(25),vs Junction Temperature TjVGT(25)VGT(Tj)深圳市骊微电子科技有限公司UTC BT131 TRIAC 1ms0.1ms10us1tp/sFigure 11.Transient Thermal ImpedanceZth j-lead,vs Pulse W idth tp0.010.110ms0.1s1.52010.52VT/V1.510.50Figure 10.Typical and MaximumOn-state CharacteristicIT/ATj=125Zth j-sp(K/W)100150-5050031Tj/22.51.5.50Figure 7.Normalised Gate Trigger currentIGT(Tj)/IGT(25),vs Junction Temperature TjIGT(25)IGT(Tj)T2+G+T2+G-T2-G-T2-G+Tj=25Vo=1.0VRs=0.21Ohmstypmax100150-5050031Tj/22.51.5.50Figure 8.Normalised Latching CurrentIL(Tj)/IL(25),vs Junction Temperature TjIL(25)IL(Tj)100150-5050031Tj/22.51.5.50Figure 9.Normalised Holding CurrentIH(Tj)/IH(25),vs Junction Temperature TjIH(25)IH(Tj)1s10s10100unidirectionalbidirectionaltptPD100150500100010Tj/1001Figure 12.Typical Critical Rate of Rise of off-state Voltage,dVD/dt vs Junction Temperature TjdVD/dt(V/us)深圳市骊微电子科技有限公司UTC BT131 TRIAC UTC assumes no responsibility for equipment failures that result from using products at values thatexceed,even momentarily,rated values(such as maximum ratings,operating condition ranges,orother parameters)listed in products specifications of any and all UTC products described or containedherein.UTC products are not designed for use in life support appliances,devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury.Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner.The informationpresented in this document does not form part of any quotation or contract,is believed to be accurateand reliable and may be changed without notice.深圳市骊微电子科技有限公司