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,单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,*,单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,*,半导体封装制程与设备材料知识介绍,1,半导体封装制程概述,半导体前段晶圆,wafer,制程,半导体后段封装测试,封装前段(,B/G-MOLD),封装后段(,MARK-PLANT),测试,封装就,是將前製程加工完成後所提供晶圓中之每一顆,IC,晶粒獨立分離,並外接信號線至導線架上,分离,而予以包覆,包装测试直至,IC,成品,。,2,半,导,体,制,程,Oxidization,(,氧化处理,),Lithography,(,微影,),Etching,(,蚀刻,),Diffusion Ion,Implantation,(,扩散离子植入,),Deposition,(,沉积,),Wafer Inspection,(,晶圆检查,),Grind&Dicing,(,晶圓,研磨及,切割),Die Attach,(,上片,),Wire,Bonding,(,焊线,),Molding,(,塑封,),Package,(,包装,),Wafer Cutting,(,晶圆切断,),Wafer,Reduce,(,晶圆减薄,),Laser Cut&package saw,(,切割,成型,),Testing,(,测试,),Laser mark,(,激光印字,),IC,制造,开始,前段結束,后段封装开始,製造完成,3,封装型式概述,IC,封装型式可以分为两大类,一为引脚插入型,另一为表面黏着型,构装型态,构装名称,常见应用产品,Single In-Line Package(SIP,),Power Transistor,Dual In-Line Package(DIP,),SRAM,ROM,EPROM,EEPROM,FLASH,Micro controller,Zigzag In-Line Package(ZIP,),DRAM,SRAM,Small Outline Package(SOP,),Linear,Logic,DRAM,SRAM,Plastic Leaded Chip Carrier(PLCC,),256K DRAM,ROM,SRAM,EPROM,EEPROM,FLASH,Micro controller,Small Outline Package(SOJ,),DRAM,SRAM,EPROM,EEPROM,FLASH,Quad Flat Package(QFP,),Microprocessor,BALL Grid Array(BGA,),Microprocessor,4,封 裝 型 式,(PACKAGE),Through Hole,Mount,Shape,Material,Lead Pitch,No of I/O,Typical Features,Ceramic,Plastic,2.54,mm,(100miles),8 64,DIP,Dual In-line,Package,Plastic,2.54,mm,(100miles),1 direction lead,325,SIP,Single In-line,Package,5,封 裝 型 式,Through Hole,Mount,Shape,Material,Lead Pitch,No of I/O,Typical Features,Plastic,2.54,mm,(100miles),1 direction,lead,1624,ZIP,Zigzag,In-line,Package,Plastic,1.778,mm,(70miles),20 64,S-DIP,Shrink,Dual In-line,Package,6,封 裝 型 式,Through Hole,Mount,Shape,Material,Lead Pitch,No of I/O,Typical Features,Ceramic,Plastic,2.54,mm,(100miles),half-size pitch in the width direction,2432,SK-DIP,Skinny,Dual,In-line,Package,Ceramic,Plastic,2.54,mm,(100miles),PBGA,Pin Grid,Array,7,封 裝 型 式,Surface,Mount,Shape,Material,Lead Pitch,No of I/O,Typical Features,Plastic,1.27,mm,(50miles),2 direction lead,8 40,SOP,Small,Outline,Package,Plastic,1.0,0.8,0.65,mm,4 direction lead,88200,QFP,Quad-Flat,Pack,8,封 裝 型 式,Surface,Mount,Shape,Material,Lead Pitch,No of I/O,Typical Features,Ceramic,1.27,0.762,mm,(50,30miles),2,4 direction lead,2080,FPG,Flat,Package,of Glass,Ceramic,1.27,1.016,0.762,mm,(50,40,30 miles),2040,LCC,Leadless,Chip,Carrier,9,封 裝 型 式,Surface,Mount,Shape,Material,Lead Pitch,No of I/O,Typical Features,Ceramic,1.27,mm,(50miles),j-shape bend,4 direction lead,18124,PLCC,Plastic Leaded,Chip Carrier,Ceramic,0.5,mm,32200,VSQF,Very,Small,Quad,Flatpack,10,S,anDisk,Assembly,Main,Process,Die C,ure,(Optional),Die Bond,Die Saw,Plasma,Card Asy,Memory Test,Cleaner,Card,Test,Packing,for,Outgoing,Detaping,(Optional),Grinding,(Optional),Taping,(Optional),Wafer,Mount,UV Cure,(Optional),Laser mark,Post Mold Cure,Molding,Laser Cut,P,ackage Saw,Wire Bond,SMT,(Optional),11,半导体设备供应商介绍,-,前道部分,PROCESS,VENDOR,MODEL,SMT-PRINTER,DEK,HOR-2I,SMT,CHIP MOUNT,SIMENS,HS-60,TAPING,NITTO,DR3000-III,INLINE GRINDER&POLISH,ACCRETECH,PG300RM,STANDALONE GRINDER,DISCO,8560,DETAPING,NITTO,MA3000,WAFER MOUNTER,NITTO,MA3000,DICING SAW,DISCO,DFD 6361,TSK,A-WD-300T,12,PROCESS,VENDOR,MODEL,DIE BOND,HITACHI,DB700,ESEC,ESEC2007/2008,ASM,ASM889898,CURE OVEN,C-SUN,QDM-4S,WIRE BONDER,K&S,K&S MAXUM ULTRA,SKW,UTC-2000,ASM,Eagle60,PLASMA CLEAN,MARCH,AP1000,TEPLA,TEPLA400,Mold,TOWA,YPS-SERIES,ASA,OMEGA 3.8,半导体设备供应商介绍,-,前道部分,13,半导体设备供应商介绍,PROCESS,VENDOR,MODEL,INK MARK,E&R,E&R,TECA-PRINT,PR-601,LASER MARK,GPM,SE+SE39+SE36+SE45,鈦昇,BLAZON-2600,BALL ATTACH,VANGUARD,VAI6300,AMS,AMS1500i,D/D,YAMADA,CU-1028-1,GPM,SE00+SH01+SH02+SE07,FORMING,YAMADA,CU-1029-1,GPM,SEH01+SH02+SH25,14,半导体设备供应商介绍,PROCESS,VENDOR,MODEL,SINGULATION,GPM,SN39+SH52,YAMADA,CU,PLATING,MECO,EDF+EPL2400,AEM,SBP2400-ED,LEAD SCAN,RVSI,LS-7700,ICOS,9450,EVER-TECH,TS-60,15,半导体设备供应商介绍,16,常用术语介绍,SOP-Standard Operation Procedure,FMEA-,Failure Mode Effect Analysis,SPC-,Statistical Process Control,DOE-,Design Of Experiment,IQC,/OQC,-Incoming/O,uting,Quality Control,MTBA/MTBF-between assit/Failure,UPH-Units Per Hour,CPK-,品质参数,17,晶圆,研磨,(,GRINDING),1.GRINDING,工艺,l,研磨,1.,研磨分為粗磨與細磨,晶圓粗糙度需小於,0.08um.,2 .,細磨厚度在,1020um,之間,而二次研磨參數中,細磨厚度為,15um(,二次研磨變更作業膠膜為,230um).,3.,研磨標準厚度,:,a.HSBGA:1113MIL,標準研磨厚度為,12MIL,b.PBGA:1116MIL,標準研磨厚度為,12MIL.,c.LBGA:9.510.5MIL,標準研磨厚度為,10MIL.,5.,研磨時機器會先量側晶片厚度以此為初始值,粗磨厚度及最終厚度,(,即細磨要求的厚度,).,18,Spindle1,粗磨,spindle2,細磨,清洗區,離心除水,離心除水,背面朝上,Wafer,研磨時晶圓與,SPINDLE,轉向,19,2.,Grinding,相关材料,A,TAPE,麦拉,B Ginding,砂轮,C WAFER CASSETTLE,20,工艺对,TAPE,麦拉的要求:,1。,MOUNT,No delamination,STRONG,2。SAW,ADHESION,No die flying off,No die crack,21,工艺对麦拉的要求:,3。,EXPANDING,TAPE,Die distance,ELONGATION,Uniformity,4。PICKING UP,WEAK,ADHESION,No contamination,22,TAPE,種類,:,a.AD WILL D-575 UV,膠膜,(,黏晶片膠膜 白色,),厚度,150UM,b.AD WILL,-295,黏晶片膠膜黑色厚度,120UM,c.AD WILL S-200,熱封式膠帶,(,去膠膜膠帶,),白色 厚度,d.FURUKAWA UC-353EP-110AP(PRE-CUT)UV,膠膜 白色 厚度,110um,e.FURUKAWA UC-353EP-110A UV,膠膜白色厚,110um,f.FURUKAWA UC-353EP-110BP UV TAPE,白色厚,110um.,g.AD WILL G16 P370,黑色厚,80UM.,h.NITTO 224SP 75UM,23,3.,Grinding,辅助设备,A Wafer Thickness Measurement,厚度测量仪,一般有接触式和非接触式光学测量仪两种;,B Wafer roughness Measurement,粗糙度测量仪,主要为光学反射式粗糙度测量方式;,24,4.,Grinding,配套设备,A Taping,贴膜机,B Detaping,揭膜机,C Wafer Mounter,贴膜机,25,T,aping,需確認,wafer,是否有破片或污染或者有氣泡等等現象,.,特别是,VOID;,上膠膜後,容易,發生,的,defect,为龟,裂或破片,;,切割,正面上膠,上膠,電腦偵測方向,取出,背面朝下,26,D,etaping,27,l,Wafer mount,Wafer frame,28,晶 圓 切 割(,Dicing),1.,Dicing,设备介绍,A DISCO 641/651,系列,B ACCERTECH,东京精密200,T/300T,29,Main Sections Introduction,Cutting Area:Spindles(Blade,Flange,Carbon Brush),Cutting Table,Axes(X,Y1,Y2,Z1,Z2,Theta),OPC,Loader Units:Spinner,Elevator,Cassette,Rotation Arm,30,Blade Close-View,Blade,Cutting WaterNozzle,Cooling Water Nozzle,31,Twin-Spindle Structure,Rear,Front,X-axis speed:,up to 600 mm/s,Cutting speed:,up to 80 mm/s,32,A Few Concepts,BBD(Blade Broken Detector),Cutter-set:Contact and Optical,Precision Inspection,Up-Cut and Down-Cut,Cut-in and Cut-remain,33,晶 圓 切 割(,Dicing),2.Dicing,相关工艺,A Die Chipping,芯片崩角,B Die Corrosive,芯片腐蚀,C Die Flying,芯片飞片,34,Wmax,Wmin,Lmax ,DDY,DY,規格,DY 0.008mmWmax 0.070mmWmin 0.8*,刀厚,Lmax 1000,4,90/1004,8,11,80,o,8,o,Organic Contamination vs Contact Angle,Water Drop,Chip,Chip,114,塑封,(Molding),Molding,设备介绍,A,TOWA,Y1-SERIES,B ASA,ONEGA 3.8,115,Towa Auto Mold Training,机器上指示灯的说明:,1、绿灯机器处于正常工作状态;,2、黄灯机器在自动运行过程中出现了报警提示,但机器不会立即停机;,3、红灯机器在自动运行过程中出现了故障,会立即停机,需要马上处理。,机器结构了解正面,指示灯,主机,Tablet,压机,人机界面,紧急停机按钮,116,Towa Auto Mold Training,机器结构了解背面,CULL BOX,用来装切下来的料饼;,OUT MG,用来装封装好的,L/F;,配电柜用来安装整个模机的电源和,PLC,,以及伺服电机的,SERVO PACK。,CULL BOX,OUT MG,配电柜,紧急停机按钮,117,Towa Auto Mold Training,模具介绍:,型腔,注塑孔,胶道,模具是由硬而脆的钢材加工而成的。,所有的清洁模具的工具必须为铜制品,以免对模具表面产生损伤。,严禁使用钨钢笔、,cull,等非铜材料硬质工具清洁模具。,118,塑封,(Molding),2.,Molding,相关材料,A Compound,塑封胶,B Mold Chase,塑封模具,119,塑封,(Molding),3.,Molding,辅助设备,A X-RAY,X,射线照射机,B Plasma,清洗机,120,Thanks for watching and listening,The End,121,
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