半导体CMP工艺介绍教案资料.ppt

Click to edit Master title style,Click to edit Master text styles,Second level,Third level,Fourth level,Fifth level,*,Introduction of CMP,化学机械抛光制程简介,（,Chemical Mechanical Polishing-CMP),目录,CMP,的发展史,CMP,简介,为什么要有,CMP,制程,CMP,的应用,CMP,的耗材,CMP,Mirra-Mesa,机台简况,Introduction of CMP,CMP,发展史,1983:,CMP,制程由,IBM,发明。,1986:,氧化硅,CMP（Oxide-CMP）,开始试行。,1988:,金属钨,CMP（W CMP）,试行。,1992:CMP,开始出现在,SIA Roadmap。,1994:,台湾的半导体生产厂第一次开始将化学机械研磨应用于生产中。,1998:IBM,首次使用铜制程,CMP。,Introduction of CMP,CMP,制程的全貌简介,Introduction of CMP,CMP,机台的基本构造(,I),压力,pressure,平台,Platform,研磨垫,Pad,芯片,Wafer,研磨液,Slurry,Wafer carrier,终点探测,Endpoint,Detection,钻石整理器,Diamond Conditioner,Introduction of CMP,CMP,机台的基本构造,(II),Introduction of CMP,Mirra,机台概貌,Silicon wafer,Diamond disk,Introduction of CMP,Teres,机台概貌,Introduction of CMP,线性平坦化技术,Introduction of CMP,Introduction of CMP,Teres,研磨均匀性(,Non-uniformity),的气流控制法,研磨皮带上的气孔设计(,Air-belt design),Introduction of CMP,F-Rex200,机台概貌,Introduction of CMP,终点探测图（,STI CMP endpoint profile）,光学,摩擦电流,为什么要做化学机械抛光,（,Why CMP）?,Introduction of CMP,没有平坦化之前芯片的表面形态,Introduction of CMP,Isolation,0.4,um,0.5,um,IMD,M2,M2,M1,M1,1.2,um,0.7,um,0.3,um,1.0,um,2.2,um,没有平坦化情况下的,PHOTO,Introduction of CMP,各种不同的平坦化状况,Introduction of CMP,没有平坦化之前,平滑化,局部平坦化,全面平坦化,平坦化程度比较,CMP,Resist Etch Back,BPSG Reflow,SOG,SACVD,Dep/Etch,HDP,ECR,0.1,1,10,100,1000,10000,(,Gap fill),Local,Global,平坦化 范围(微米),Introduction of CMP,Step Height,（,高低落差）&,Local Planarity,（,局部平坦化过程）,高低落差越来越小,H0=,step height,局部平坦化：高低落差消失,Introduction of CMP,初始形貌对平坦化的影响,A,B,C,A,C,B,RR,Time,Introduction of CMP,CMP,制程的应用,CMP,制程的应用,前段制程中的应用,Shallow trench isolation,(,STI-CMP),后段制程中的应用,Pre-meal dielectric planarization(ILD-CMP),Inter-metal dielectric planarization(IMD-CMP),Contact/Via formation(W-CMP),Dual Damascene(Cu-CMP),另外还有,Poly-CMP,RGPO-CMP,等。,Introduction of CMP,STI&Oxide CMP,什么是,STI CMP?,所谓,STI（,Shallow Trench Isolation,），,即浅沟槽隔离技术，它的作用是用氧化层来隔开各个门电路（,GATE,），,使各门电路之间互不导通。,STI CMP,主要就是将,wafer,表面的氧化层磨平，最后停在,SIN,上面。,STI CMP,的前一站是,CVD,区，后一站是,WET,区。,STI,STI,Oxide,SIN,STI,STI,SIN,CMP,前,CMP,后,所谓,Oxide CMP,包括,ILD(Inter-level Dielectric)CMP,和,IMD,(Inter-metal Dielectric,),CMP,它主要是磨,氧化硅,(,Oxide,),将,Oxide,磨到一定的厚度，从而达到平坦化。,Oxide,CMP,的前一站是长,Oxide,的,CVD,区，后一站是,Photo,区。,什么是,Oxide CMP?,CMP,前,CMP,后,STI&Oxide CMP,W（,钨）,CMP,流程-1,Ti/TiN PVD,WCMP,Ti/TiN,N-Well,P-Well,P+,P+,N+,N+,W CVD,Ti/TiN,N-Well,P-Well,P+,P+,N+,N+,W,W CVD,功能：,Glue（,粘合）,and barrier（,阻隔）,layer。,以便,W,得以叠长。,功能：长,W,膜 以便导电用。,POLY CMP,流程,简介,-2,a,FOX,FOX,Cell,P2,P2,P2,FOX,FOX,Cell,P2,P2,P2,FOX,POLY DEPO,POLY CMP+OVER POLISH,功能：长,POLY,膜以填之。,功能：刨平,POLY,膜。,END POINT（,终点）探测界限+,OVER POLISH（,多出研磨）残留的,POLY,膜。,ROUGH POLY CMP,流程-2,b,CELL ARRAY CROSS SECTION,FOX,FOX,Cell,P2,P2,P2,CELL ARRAY CROSS SECTION,FOX,FOX,Cell,P2,P2,P2,PR COATING,功能：,PR,填入糟沟以保护糟沟内的,ROUGH POLY。,ROUGH POLY CMP,功能：刨平,PR,和,ROUGH POLY,膜。,END POINT（,终点）探测界限+,OVER POLISH（,多出研磨）残留的,ROUGH POLY,膜。,CMP,耗材,Introduction of CMP,CMP,耗材的种类,研磨液（,slurry）,研磨时添加的液体状物体，颗粒大小跟研磨后的刮伤等缺陷有关。,研磨垫（,pad）,研磨时垫在晶片下面的片状物。它的使用寿命会影响研磨速率等。,研磨垫整理器（,condition disk）,钻石盘状物，整理研磨垫。,Introduction of CMP,CMP,耗材的影响,随着,CMP,耗材（,consumable）,使用寿命（,life time）,的增加，,CMP,的研磨速率（,removal rate），,研磨均匀度（,Nu%）,等参数都会发生变化。故要求定时做机台的,MONITOR。,ROUTINE MONITOR,是用来查看机台和制程的数字是否稳定，是否在管制的范围之内的一种方法。,Introduction of CMP,CMP Mirra-Mesa,机台简况,Introduction of CMP,FABS,MIRRA,MESA,Mirra-Mesa,机台外观-侧面,SMIF POD,WET ROBOT,Introduction of CMP,Mirra,(,Mesa),Top view,Mirra-Mesa,机台外观-,俯视图,Introduction of CMP,Mirra-Mesa,机台-运作过程简称,1,2,3,4,5,6,1,2:,FABS,的机器手从,cassette,中拿出未加工的,WAFER,并送到,WAFER,的暂放台。,2,3:,Mirra,的机器手接着把,WAFER,从暂放台运送到,LOADCUP。LOADCUP,是,WAFER,上载与卸载的地方。,3,4:,HEAD,将,WAFER,拿住。,CROSS,旋转把,HEAD,转到,PLATEN 1,到2到3如此这般顺序般研磨。,43:研磨完毕后，,WAFER,将在,LOADCUP,御载。,35:,Mirra,的机器手接着把,WAFER,从,LOADCUP,中拿出并送到,MESA,清洗。,5,6:,MESA,清洗部分有1）氨水（,NH4OH）+MEGASONIC（,超声波）糟 2）氨水（,NH4OH）,刷。3）氢氟酸水（,HF),刷 4）,SRD，,旋转，烘干部。,61:最后，,FABS,机器手把清洗完的,WAFER,送回原本的,CASSETTE。,加工就这样完毕了。,HEAD,End,