热阻论文：基于C-Mount热沉封装不同激光器芯片尺寸热分析.doc

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热阻论文：基于C-Mount热沉封装不同激光器芯片尺寸热分析

【中文摘要】随着半导体激光器工艺技术的不断提高,输出功率的不断增加,热效应成为制约大功率半导体激光器发展主要障碍。其半导体激光器的散热能力常用热阻表示。本文制作了条宽为150μm,腔长为1000μm的半导体激光器,并用In焊料烧结在C-Mount热沉上,并进行TO-3封装。用波长漂移法对基于C-Mount封装类型的多只3W激光器的热阻进行了测量,得出其热阻为5-3℃/W.5.9℃/W之间。并用ANSYS有限元热分析软件在理想条件下对其进行了模拟,从其实测和模拟结果的差异引入了由于焊料层空洞增加的接触热阻。并用ANSYS有限元热分析软件模拟引入接触热阻后的热阻,其值和实测的结果基本吻合,所以我们用同样的方法对C-Mount热沉封装的不同芯片尺寸进行了模拟。本文又对3W激光器在不同的占空比下测量了其温升值,结果发现其在不同的占空比下的温升是不同的,其中在0.5%占空比条件下其温升情况为连续条件的19.6%。并用ANSYS有限元热分析软件对100%占空比下的温升情况进行了模拟,从模拟结果中可以看出脉冲的特点是激光器在1ms内温升就能达到稳态时候的36%,激光器在0.1s就能达到稳态温度的95%以上。所以即便激光器在0.5%占空比条件下工作时,其温升也是不能忽略的。
【英文摘要】With the development of Semiconductor Laser technology and the increasing of the output power, the laser thermal effect which has become the main obstacle to the development of high power Semiconductor Lasers.The thermal-resistance is usually used as the cooling capacity of Semiconductor Lasers.In this paper,we made a Semiconductor Laser with strip width of 150μm and cavity length of 1000μm,which sintered on C-Mount heat sink with In solder.At the same time, we packaged the Laser with TO-3.We measured the Thermal-resistance of several 3W Lasers which are based on C-Mount heat sink with wavelength shift method.The Thermal-resistance that we get are between 5.3℃/W-5.9℃/W. We simulated the Thermal-resistance of Semiconductor Laser with ANSYS Finite element thermal analysis software on ideal conditions,and we introducted the contact resistance caused by the empty in In solder through the measured and simulated results. We used ANSYS software simulate the Thermal-resistance of Laser after introduct the contact resistance,and it’s value and the measured results are basically consistent We used the same method to simulate the Thermal-resistance of different chip size of Lasers,which based on C-Mount heat sink.In this paper,we measured the temperature rise of different duty cycles of 3W Lasers, the results show that the different duty cycle of the temperature rise are different, which 0.5% duty cycle is about 20% to continues conditions of temperature rise. We used ANSYS software to simulate the temperature rise of 100% duty cycle,from simulation,and it could get that the temperature rise is 36% of the steady state in I ms.and the temperature rise is 95% of the steady state in 0.1 s. Therefore, even if the laser under the conditions of 0.5% duty cycle work, the temperature should not be negligible.
【关键词】热阻 C-Mount封装 激光二极管 In焊料 ANSYS有限元
【英文关键词】Thermal-resistance C-Mount-package Laser-Diode In-Solder ANSYS Finite-element
【目录】基于C-Mount热沉封装不同激光器芯片尺寸热分析

摘要

4-5

ABSTRACT

5

目录

6-7

第一章 绪论

7-14

1.1 引言

7

1.2 半导体激光器的历史回顾

7-10

1.3 半导体激光器的发展趋势

10-11

1.4 半导体激光器热特性分析研究意义

11

1.5 半导体激光器热特性的国内外研究现状

11-13

1.6 本文研究的主要内容

13-14

第二章 半导体激光器原理和激光器结构

14-27

2.1 半导体激光器的基本原理

14-20

2.2 量子阱激光器

20-23

2.3 应变量子阱激光器

23-27

第三章 分子束外延(MBE)和808nm激光器结构设计

27-35

3.1 分子束外延(MBE)

27-30

3.2 MBE的优缺点

30-31

3.3 808nm半导体激光器结构设计

31-35

第四章 制作808nm半导体激光器工艺

35-48

4.1 光刻

35-37

4.2 刻蚀

37-39

4.3 电极制作

39-41

4.4 激光器烧结工艺

41

4.5 半导体激光器封装工艺

41-48

第五章 激光器热分析的理论基础

48-52

5.1 瞬态和稳态定义

48

5.2 温度梯度

48-49

5.3 温度场的边界条件

49-50

5.4 热阻的测量方法

50-52

第六章 C-Mount封装不同激光器芯片尺寸热阻分析

52-61

6.1 激光器热阻的测量

52-56

6.2 ANSYS模拟激光器的热阻

56-59

6.3 激光器在不同占空比下的热分析

59-61

结论

61-62

致谢

62-63

附录

63-65

参考文献

65

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