半导体工艺PhotoPPT课件.ppt

IC工艺技术系列讲座第二讲PHOTOLITHOGRAPHY光刻1 1.讲座提要1.General 2.Facility(动力环境)3.Mask(掩膜版)4.Process step highlight(光刻工艺概述)5.BCD 正胶工艺6.History and 未来的光刻工艺2 2.1.GeneralMASKING Process(光刻工艺)n nPhotolithography Photolithography(光学光刻光学光刻)-Transfer a -Transfer a temporary pattern(resist)temporary pattern(resist)Defect controlDefect controlCritical dimension controlCritical dimension controlAlignment accuracyAlignment accuracyCross section profileCross section profile n nEtch Etch(腐腐蚀蚀)-Transfer a permanent pattern -Transfer a permanent pattern(Oxide,Nitride,Metal(Oxide,Nitride,Metal)3 3.2.0 Facility requirementn nTemperature (Temperature (温度温度)70 70 o oF Fn nHumidity(Humidity(湿度湿度)45%45%n nPositive pressure(Positive pressure(正正压压)0.02in/H0.02in/H2 2OOn nParticle control(Particle control(微粒微粒)Class 100Class 100n nVibration(Vibration(震震动动)n nYellow light environment(Yellow light environment(黄光区黄光区)n nDI water(DI water(去离子水去离子水)17mhom)17mhomn nCompress air and Nitrogen(Compress air and Nitrogen(加加压压空气空气,氮氮气气)n nIn house vacuum(In house vacuum(真空管道真空管道)4 4.3.0 Mask(掩膜版)n nDesign n nPG tapen nMask making Plate-quartz,LE glass,Soda line glassPlate-quartz,LE glass,Soda line glass Coating-Chrome,Ion oxide,EmulsionCoating-Chrome,Ion oxide,Emulsion Equipment-E-beam,Pattern generatorEquipment-E-beam,Pattern generatorn nMask storage-Anti static BoxAnti static Box5 5.Pellicle6 6.Pellicle protection7 7.4.0 光刻工艺概述1.1.Prebake and HMDS (前烘前烘)2.2.Resist coating(涂胶涂胶)EBR(EBR(去胶去胶边边),soft bake,),soft bake,3.Exposure(曝光曝光)Alignment(Alignment(校正校正)4.Develop(显显影影)Post e-bake,Hard bake,backside rinse Post e-bake,Hard bake,backside rinse 5.Develop inspection(显检显检)8 8.4.1 Prebake and HMDS treatmentPurpose of Pre-bake and HMDS treatment is to improve the Purpose of Pre-bake and HMDS treatment is to improve the resist adhesion on oxide wafer.HMDS is adhesion promoter resist adhesion on oxide wafer.HMDS is adhesion promoter especially designed for positive resist.especially designed for positive resist.HMDS(Hexamethyldisilane)can be applied on the wafers byHMDS(Hexamethyldisilane)can be applied on the wafers by1.1.Vapor in a bucketVapor in a bucket2.2.vapor in a vacuum boxvapor in a vacuum box3.3.Directly dispense on waferDirectly dispense on wafer4.4.YES system-in a hot vacuum systemYES system-in a hot vacuum system5.5.Vapor in a hot plate(with exhaust)Vapor in a hot plate(with exhaust)Too much HMDS will cause poor spin,vice versa will cause Too much HMDS will cause poor spin,vice versa will cause resist liftingresist lifting9 9.4.2 Resist Coating(涂胶)Resist coating specification(Resist coating specification(指指标标）n nThicknessThickness（厚度）（厚度）0.7u 0.7u 2.0u (3.0 2.0u (3.0以上以上for Pad layer)for Pad layer)n nUniformityUniformity（均匀度）（均匀度）+50A 50A +200A200An nSize of EBR Size of EBR（去胶（去胶边边尺寸）尺寸）n nParticleParticle（颗颗粒）粒）20 per wafer20 per wafern nBackside contamination(Backside contamination(背后背后污污染）染）三个主要因数影响涂胶的三个主要因数影响涂胶的结结果果1.1.ResistResistProduct(Product(产产品）品）Viscosity Viscosity（粘度）（粘度）2.2.SpinnerSpinnerDispense method Dispense method（涂胶方法）（涂胶方法）Spinner speed(RPM)Spinner speed(RPM)（转转速）速）Exhaust Exhaust（排气）（排气）Soft bake temperature Soft bake temperature（烘温）（烘温）3.3.FacilityFacilityTemperature Temperature（室温）（室温）Humility Humility（湿度）（湿度）1010.4.2.1Coater(涂胶机）Equipment module and special featuren nPre-bake and HMDS-Hot/Cold platePre-bake and HMDS-Hot/Cold platen nResist dispense-Resist pumpResist dispense-Resist pumpn nRPM accuracy-MotorRPM accuracy-Motorn nEBR-Top/bottomEBR-Top/bottomn nHot plate-soft bake temperature accuracyHot plate-soft bake temperature accuracyn nExhaustExhaustn nWaste collectionWaste collectionn nTemperature/Humidity control hoodTemperature/Humidity control hoodn nTransfer system-Particle and reliabilityTransfer system-Particle and reliabilityn nProcess step and process program-FlexibleProcess step and process program-Flexible1111.SVG 8800升降机涂胶HMDS热板冷板升降机升降机升降机涂胶热板热板升降机升降机升降机升降机涂胶热板冷板HMDS冷板冷板冷板涂胶热板热板升降机升降机显影热板热板热板冷板4.2.2 Coater(涂胶机）combination1212.4.2.3 Coater(涂胶机）Resist dispense methodsn nStatic Static n nDynamicDynamicn nRadialRadialn nReverse radialReverse radialResist pump(Volume control-2cc/wafer and dripping)(Volume control-2cc/wafer and dripping)n nBarrel pump-TritekBarrel pump-Tritekn nDiaphragm pump-MilliporeDiaphragm pump-Milliporen nN2 pressure control pump-IDLN2 pressure control pump-IDLn nStep motor control pump-Cybot Step motor control pump-Cybot n nsize of dispense head size of dispense head 1313.4.2.4 Coater(涂胶机）rpm(转速）and acceleration（加速）n nMaximum speed-Up to 10000 rpmMaximum speed-Up to 10000 rpmn nStability-day to dayStability-day to dayn nAcceleration-controllable number of Acceleration-controllable number of stepsstepsn nReliability-time to replacementReliability-time to replacementEBR(Edge bead removal)（清边）n nMethod-Top EBR or Bottom EBR or Method-Top EBR or Bottom EBR or Top and bottom EBRTop and bottom EBRn nProblem-DrippingProblem-Drippingn nChemical-Acetone,EGMEA,PGMEA,Chemical-Acetone,EGMEA,PGMEA,ETHLY-LACTATEETHLY-LACTATE1414.Resist Typen nNegative resistNegative resistn nPositive resistPositive resistG-lineG-linei i linelinereverse imagereverse imageTAC-top anti-reflective coatingTAC-top anti-reflective coatingBARLI-bottom anti-reflective coatingBARLI-bottom anti-reflective coatingn nChemical amplification resistChemical amplification resistn nX ray resistX ray resist1515.4.3.1 Exposure(曝光)Transfer a pattern from the mask(reticle)to resistTransfer a pattern from the mask(reticle)to resistGoalGoal1.1.Critical Dimension control(CD)Critical Dimension control(CD)条条宽宽2.2.Alignment Alignment 校准校准-Mis-alignment,run in/out-Mis-alignment,run in/out3.3.Pattern distortion Pattern distortion 图样变图样变形形-Astigmatism-Astigmatism4.4.Cross section profile Cross section profile 侧侧面形貌面形貌-side wall angle-side wall angle5.5.Defect freeDefect free无缺陷无缺陷Equipment/mask/resist selectionEquipment/mask/resist selection1.1.Resolution Resolution 分辨率分辨率-Expose character,Light source-Expose character,Light source(wavelength),N/A,(wavelength),N/A,2.2.Auto-alignment skill Auto-alignment skill 自自动动校准技校准技术术-Light field,dark field,-Light field,dark field,laserlaser3.3.MaskMask掩膜版掩膜版-e-beam master,sub-master,spot size,-e-beam master,sub-master,spot size,quartz plate,defect density,CD requirementquartz plate,defect density,CD requirement4.4.Resist selection Resist selection 胶胶选择选择1616.4.3.2Exposure(曝光)Aligner Technology1.1.Contact print(Contact print(接触）接触）Soft contact,hard contact,proximitySoft contact,hard contact,proximity2.2.Scanner(Scanner(扫扫描）描）3.3.Stepper(Stepper(重复）重复）1X,2X,4X,5X,10X1X,2X,4X,5X,10X4.4.Step Step Scan(Scan(重复重复扫扫描描)4X-reticle move,wafer move,4X-reticle move,wafer move,reticle/wafer movereticle/wafer move5.5.X ray(XX ray(X光）光）1:16.6.E-beam(E-beam(电电子束）子束）-Direct write-Direct write 1717.4.3.3Exposure(曝光)Contact print(接触）1.1.Most of use for negative resist process Most of use for negative resist process-for 5u process and can be push to-for 5u process and can be push to 3u.3u.2.2.Positive resist can print smaller than Positive resist can print smaller than 3u,and deepUV can push to 1u,but 3u,and deepUV can push to 1u,but very high defectvery high defect3.3.Equipment:Equipment:-Canon PLA 501-Canon PLA 501-Cobilt-Cobilt-Kasper-Kasper-K&S-K&S1818.Contact print-Canon 5011919.4.3.4Exposure(曝光)Scanner(扫描）1.Most of use for G line Positive resist process-for 3u process and can be push to 2u.2.Negative resist can print smaller than 4u 3.Equipment:-Canon MPA 500,600-Perkin Elmer 100,200,300,600,700,900 2020.PE 240 Scanner2121.Canon 600 Scanner2222.4.3.5Exposure(曝光)Stepper(重复）1.1.G line positive resist-for 0.8u G line positive resist-for 0.8u process process 2.2.i line positive resist-0.5u processi line positive resist-0.5u process3.3.i line resist plus phase-shift mask-can i line resist plus phase-shift mask-can be pushed to 0.35be pushed to 0.354.4.deepUV resist process deepUV resist process-0.35u and-0.35u and belowbelow5.5.Equipment:Equipment:-Ultratech-Ultratech-Canon-Canon-Nikon-Nikon-ASML-ASML2323.4.3.6Exposure(曝光)6ASML Stepper list ModelModelWavelength ResolutionWavelength ResolutionASML 2500 ASML 2500 g g0.80.8ASML 5000ASML 5000ASML 5500 ASML 5500 20,22,25,60,60B,80,80B 20,22,25,60,60B,80,80Bi i0.550.55ASML 5500 ASML 5500 100,100C,100D,150 100,100C,100D,150i i0.450.45ASML 5000 ASML 5000 200,200B,250,250B 200,200B,250,250B UV UV0.350.35ASML 5500 ASML 5500 300,300B,C,D,TFH 300,300B,C,D,TFH UV UV0.250.25ASML 5500-900 Step-ScanASML 5500-900 Step-ScanUVUV2424.4.4.1Develop(显影）Develop processDevelop process1.1.Post expose bakePost expose bake2.2.Resist DevelopResist Develop3.3.DI water rinse DI water rinse 4.4.Hard BakeHard BakeDevelop equipmentDevelop equipment1.1.Batch developBatch develop2.2.Track developTrack developDevelop chemicalDevelop chemical1.1.KOH KOH 2.2.Metal free(TMAH)-Metal free(TMAH)-TetramethylamoniahydroxideTetramethylamoniahydroxide3.3.Wetting agent-with/withoutWetting agent-with/without4.4.Concentration-2.38%TMAHConcentration-2.38%TMAHTrack develop methodTrack develop method1.1.SpraySpray2.2.SteamSteam3.3.Signal-PaddleSignal-Paddle4.4.Double-PaddleDouble-Paddle2525.4.4.2 Develop(显影）Develop Track1.Temperature control water jacket for Develop line2.Develop pump/develop pressure canister3.Exhaust4.Hot plate temperature control5.Pre-wet-process program2626.4.4.3Develop(显影）CD control in developing1.1.Post bake processPost bake process2.2.Develop Time Develop Time 3.3.Concentration of developer chemical Concentration of developer chemical(Higher fast)(Higher fast)4.4.Developer temperature (lower faster Developer temperature (lower faster 1 1o o C/0.1u)C/0.1u)5.5.Develop recipe-pre-wet,paddle,Develop recipe-pre-wet,paddle,rotationrotation6.6.Age of the develop chemicalAge of the develop chemical7.7.Rinse-DI water pressureRinse-DI water pressure8.8.Hard bake temperatureHard bake temperature2727.4.5.1Develop Inspection Tool for inspection1.1.MicroscopeMicroscopeManually loadingManually loadingAutomatic loadingAutomatic loading2.2.UV lamp UV lamp Manually loadingManually loadingAutomatic loadingAutomatic loading3.3.CD measurement equipmentCD measurement equipmentManually measuring system-Vicker,Manually measuring system-Vicker,Automatic measuring system-NanolineAutomatic measuring system-NanolineCD SEMCD SEM2828.4.5.2Develop Inspection Inspection items1.Layer name2.Alignment3.Run in/out4.Pattern distortion5.Pattern integrity6.Defects lifting,particle,discoloration,scumming,bridging,excess resist,scratch7.CD(critical dimension)2929.Nanoline-for CD measurement3030.Hitachi 8860-CD SEM3131.Leitz Microscope inspect station3232.Autoload UV inspection system 3333.5.0 BCD 正胶工艺Equipment Equipment SSI,SVG8800,SVG 90SSI,SVG8800,SVG 90Process stepProcess steppre-bake/HMDS/cold platepre-bake/HMDS/cold platespin(5000rpm)-dynamic dispensespin(5000rpm)-dynamic dispense -top(bottom)side EBR(2mm)-top(bottom)side EBR(2mm)soft bake(100soft bake(100o oC)/cold/palteC)/cold/palteResist/specResist/specShipley Shipley 6112(1.2u)6112(1.2u)1818(1.8u 1st metal)1818(1.8u 1st metal)6818(2.4u 2nd metal)6818(2.4u 2nd metal)6118(2.9u Pad)6118(2.9u Pad)6124(3.6u-4.5u ST)6124(3.6u-4.5u ST)Everlight Everlight 533(1.2)533(1.2)Uniformity-Uniformity-+300A 300AResist coatingResist coating升降机冷板HMDS涂胶热板冷板升降机3434.SVG 903535.SVG 88003636.5.1.1Positive Resist(正胶）Component(成分）n nResin Resin（树树脂）脂）Diazonaphthoquinone(DNQ)/novolakDiazonaphthoquinone(DNQ)/novolakn nPhoto-sensitizer Photo-sensitizer （感光（感光剂剂）n nSolvent Solvent（溶（溶剂剂）n nDye Dye（染料（染料）Manufacturing(制造商）n nKodak Kodak Hunt Hunt Ash chemical (USA)Ash chemical (USA)n nTOK(Japan)TOK(Japan)n nJSR(Japan)JSR(Japan)n nShipley(USA)Shipley(USA)n nAZ(USA,Germany)AZ(USA,Germany)n nSumitomo(Japan)Sumitomo(Japan)n nEverlight(Taiwan)Everlight(Taiwan)3737.5.1.2Positive Resist(正胶）Product Name and feature(产品称与特性）以以以以everlight(everlight(永光）正胶永光）正胶永光）正胶永光）正胶为为例例例例Product SeriesProduct SeriesEPG 510 SeriesEPG 510 SeriesExpose wavelengthExpose wavelengthG-Line(435nm)G-Line(435nm)ThicknessThicknessNameName 2000rpm 5000rpm 2000rpm 5000rpmViscosity Viscosity（粘度）（粘度）EPG 510-12 cpEPG 510-12 cp1.25u1.25u 0.80u0.80uEPG 512-21.5 cpEPG 512-21.5 cp2.00u2.00u 1.25u1.25uEPG 516-50 cpEPG 516-50 cp3.25u3.25u 2.00u2.00uEPG 518-105 cpEPG 518-105 cp4.50u4.50u 2.75u2.75uEPG 519-460 cpEPG 519-460 cp9.00u9.00u 5.5u5.5u Resolution(Resolution(分辨率）分辨率）0.8u (0.55u-the smallest)0.8u (0.55u-the smallest)Depth of Focus(Depth of Focus(聚焦深度）聚焦深度）+1.4u(1.0u line/space)1.4u(1.0u line/space)Sensitivity(Sensitivity(感光度）感光度）Eth=60 mj/cm2Eth=60 mj/cm2Eop=90 mj/cm2Eop=90 mj/cm23838.5.1.4Positive Resist(正胶）Select a positive resist1.1.Resolution Resolution （分辨率）（分辨率）2.2.Resist thickness-Spin curve Resist thickness-Spin curve （厚度）（厚度）3.3.Photo speedPhoto speed(曝光速度曝光速度)4.4.Expose latitude Expose latitude (曝光曝光宽宽容度容度)5.5.Adhesion Adhesion （粘附性）（粘附性）6.6.Reflective notch Reflective notch（反射缺口）（反射缺口）6.6.Metallic content Metallic content （金属含量）（金属含量）7.7.Thermal stability Thermal stability （热稳热稳定性）定性）8.8.Plasma resistance Plasma resistance （抗腐（抗腐蚀蚀能力）能力）9.9.How easy to be removed How easy to be removed （清除能力）（清除能力）10.10.Price Price （價格）（價格）3939.5.2 ExposeEquipment Ultratech stepper 1100 (6”)Ultratech stepper 1500 (6”)Canon 600 (6”)Perkin Elmer 240 (4”)4040.Positive Resist reaction during expose4141.Positive Resist reaction during expose4242.5.2.1Ultratech Stepper Ultratech steppern nG-line G-line n nN/A-0.24 and 0.31N/A-0.24 and 0.31n n1:1 print ratio1:1 print ration n3 X 5 inch reticle-3,4,5,7 field3 X 5 inch reticle-3,4,5,7 fieldn n4u depth of focus4u depth of focusn nBlind step can be push to 5u(no spec)Blind step can be push to 5u(no spec)n nCenter of array Center of array +50u 50u n nDark field alignmentDark field alignmentn nSite by Site alignment Site by Site alignment n nAlignment target Alignment target *oat-4mm X 4mm*oat-4mm X 4mm*K/T-200u X 200u*K/T-200u X 200u4343.Ultratech Stepper 11004444.Ultratech Stepper 1500/17004545.5.2.2Ultratch stepper specification4646.UTS-Reticle and Job fileGuideFiducials4747.UTS-primary lens4848.UTS AlignmentOptic4949.Ulratech stepper site by site alignment5050.UT alignment proceduren nLoad job file into computerLoad job file into computern nLoad reticleLoad reticleStart Start n niducials alignment-Guide,rotation(1500)iducials alignment-Guide,rotation(1500)n nOAT alignment OAT alignment OAT size=4mmX4mmOAT size=4mmX4mmFast and slow scan 1000uFast and slow scan 1000un nSide by side alignment Side by side alignment Key and target size 200uX200uKey and target size 200uX200ushot scan 20ushot scan 20ulong scan 100u(80u)long scan 100u(80u)n nAuto-focusAuto-focusGoble or localGoble or localn nFailure alignment Failure alignment SkipSkipExposeExposeZmodeZmode5151.5.3 Perkin Elmer alignern nMicalign PE 100Micalign PE 100n nMicalign PE 200,220,240Micalign PE 200,220,240n nMicalign PE 300,340,340HTMicalign PE 300,340,340HTn nMicalign PE 500Micalign PE 500n nMicalign PE 600Micalign PE 600n nMicalign PE 700Micalign PE 700n nMicalign PE 900Micalign P