ID2005半桥igbt驱动芯片-国产200V半桥驱动芯片-骊微电子 .pdf

ID2005 Chipown High-Side & Low-Side Gate Drive IC General description The ID2005 is a high voltage, high speed power MOSFET driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Application Small and medium-power motor driverPower MOSFET or IGBT driverHalf-Bridge Power ConvertersFull-Bridge Power ConvertersAny Complementary Drive ConvertersFeatures Fully operational to+200 V 3.3V and 5V input logic compatibledV/dt Immunity 50 V/nsecGate drive supply range from 6 V to 18 VTypically output Source/Sink current capability 1A/1ATypically -9V negative Vs bias capabilityPackage/Order Information ID200587651234LOCOM LINHINVCC VBHO VS_Order code Package ID2005SEC-R1 SOP8 Typical Circuit ID20058765CBSRcs V1234VDC, up to 200VMLOCOM LINHINVCC VBHO VSMCU15VRcs URcs WIF UIF VIF W_BSDRBQ1Q2Q3Q5Q6Q412345Note 1: RB value suggest 10 ohms, ultra fast recovery or schottky diode should be used as BSD Note 2: CBS value according to PWM control condition Note 3: Driver circuit should be adjust according to the MOSFETs be used Note 4: Pull down resistor between Gate and Source of MOSFETs, 10k ohms is suggested Note 5: Resistors between HIN/LIN and MCU, recommended value is 100 to 1k ohms 深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m芯朋微（安趋）代理商ID2005 Chipown Function Timing Diagram HINLINHOLOFig.1 Input and output timing waveform HINHO/LO5V0V0V15V10%90%50%ton50%toffLINtftrFig.2 Propagation and Rise/Fall time definitionLIN10%90%50%50%LOHOMTLOHOMT0V15V0V15V0V5VHINFig.3 Delay matching definition深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m芯朋微（安趋）代理商ID2005 Chipown Package Information SOP8 Package Outlines and Dimensions DA3A2AA1LL1c0.25beBBE1EBASE METALSECTION B-BWITH PLATINGbb1c1 chSize Symbol Min.（mm） Typ.（mm） Max.（mm） Size Symbol Min.（mm） Typ.（mm） Max.（mm） A - - 1.75 D 4.70 4.90 5.10 A1 0.10 - 0.225 E 5.80 6.00 6.20 A2 1.30 1.40 1.50 E1 3.70 3.90 4.10 A3 0.60 0.65 0.70 e 1.27BSC b 0.39 - 0.48 h 0.25 - 0.50 b1 0.38 0.41 0.43 L 0.50 - 0.80 c 0.21 - 0.26 L1 1.05BSC c1 0.19 0.20 0.21 0 - 8 Top mark Package iDR. ID2005 YWWXXXXX SOP8 Note：Y：Year Code；WW：Week Code；XXXXX：Internal Code Notes: 1. This drawing is subjected to change without notice.2. Body dimensions do not include mold flash or protrusion.深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m芯朋微（安趋）代理商ID2005 Chipown Important NoticeWuxi Chipown Microelectronics Co. Ltd. reserves the right to make changes without further notice to any products or specifications herein. Wuxi Chipown Microelectronics Co. Ltd. does not assume any responsibility for use of any its products for any particular purpose, nor does Wuxi Chipown Microelectronics Co. Ltd assume any liability arising out of the application or use of any its products or circuits. Wuxi Chipown Microelectronics Co. Ltd does not convey any license under its patent rights or other rights nor the rights of others. 深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m芯朋微（安趋）代理商