ID5S609F1 600V半桥驱动芯片兼容IR2304.pdf

ID5S609F1 Chipown High Side & Low Side Gate Drive ICGeneral description The ID5S609F1 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. Application Small and medium- power motor driverPower MOSFET or IGBT driverHalf-Bridge Power ConvertersFull-Bridge Power ConvertersAny Complementary Driver ConvertersFeatures Fully operational to +600 V3.3 V and 5 V logic compatibledV/dt Immunity 50 V/nsecFloating channel designed for bootstrap operationGate drive supply range from 10 V to 20 VUVLO for low side channelsOutput Source / Sink Current Capability 400 mA /800 mAMatched propagation delay for both channelsInternal dead time 180ns typicalPackage/Order Information ID5S609F187651234LOCOM VCCHINLINVBHO VSID5S609F1LOCOMVCCHINLINVBHO VSOrder code Package ID5S609F1-SEC-R1 SOIC8 ID5S609F1-DEC-R1 DFN8 Typical Application Circuit ID5S609F18765CBS3214VDC, up to 600VLOCOM LINHINVCC VBHO VSMCU15VRcs IF BSDRBQ1Q2Load深圳市骊微电子科技有限公司芯朋微一级代理w w w .s z l w t e ch .co mID5S609F1 Chipown Package Information Package Information SOIC8 DA3A2AA1LL1c0.25beBBE1EBASE METALSECTION B-BWITH PLATINGbb1c1 chSize Symbol Min.（mm） Typ.（mm） Max.（mm） Size Symbol Min.（mm） Typ.（mm） Max.（mm） A - - 1.75 D 4.70 4.90 5.10 A1 0.10 - 0.225 E 5.80 6.00 6.20 A2 1.30 1.40 1.50 E1 3.70 3.90 4.10 A3 0.60 0.65 0.70 e 1.27BSC b 0.39 - 0.48 h 0.25 - 0.50 b1 0.38 0.41 0.43 L 0.50 - 0.80 c 0.21 - 0.26 L1 1.05BSC c1 0.19 0.20 0.21 0 - 8 Top mark Package Logo ID5S609F1 AYWX SOIC8 Note: Y: Year code, W: Week codes, X: Package codes Notes: 1. This drawing is subjected to change without notice.2. Body dimensions do not include mold flash or protrusion.深圳市骊微电子科技有限公司芯朋微一级代理w w w .s z l w t e ch .co mID5S609F1 Chipown Package Information DFN8 Symbol Dimensions In Millimeters Dimensions In Inches Min. (mm) Max. (mm) Min.(inch) Max.(inch) A 0.700/0.800 0.800/0.900 0.028/0.031 0.031/0.035 A1 0.000 0.050 0.000 0.002 A3 0.203REF. 0.008REF. D 1.924 2.076 0.076 0.082 E 2.924 3.076 0.115 0.121 D1 1.400 1.600 0.055 0.063 E1 1.400 1.600 0.055 0.063 k 0.200MIN. 0.008MIN. b 0.200 0.300 0.008 0.012 e 0.500TYP. 0.020TYP. L 0.224 0.376 0.009 0.015 Top mark Package Logo ID5S609F1 AYWX DFN8 Note: A: Internal code, Y: Year code, W: Week codes, X: Package codes Notes: 1. This drawing is subjected to change without notice.2. Body dimensions do not include mold flash or protrusion.深圳市骊微电子科技有限公司芯朋微一级代理w w w .s z l w t e ch .co mID5S609F1 Chipown Important NoticeWuxi Chipown Microelectronics Co. Ltd. reserves the right to make changes without further notice to any products or specifications herein. Wuxi Chipown Microelectronics Co. Ltd. does not assume any responsibility for use of any its products for any particular purpose, nor does Wuxi Chipown Microelectronics Co. Ltd assume any liability arising out of the application or use of any its products or circuits. Wuxi Chipown Microelectronics Co. Ltd does not convey any license under its patent rights or other rights nor the rights of others. 深圳市骊微电子科技有限公司芯朋微一级代理w w w .s z l w t e ch .co m