AP90N03Q 30v 90a n mos管-90n03 mos管参数_骊微电子.pdf

AP90N03Q N-Channel Enhancement MosfetFeature 30V,90ARos ON)4.2m QVGs=10V TYP:3.6 m QRos。N)7.0m Q VGs=4.5V TYP:5.2 m QAdvanced Tench TechnologyLead fee product is acquiredExcellent Ros ON)and Low Gate ChargeApplicati。nPWM appli臼tionsLoad SwitchPower managementPackage Marking and Ordering lnformati。nDevice Marking 90N03Q Device AP90N03Q Device Package PDFN3X3 Reel Size 13 inch 剑”。1WERDATA SHEET Schematic Diagram D O O D 8 7 6 S A以xx90N03Q S S S G Marking and pin Assignment Tape width Quantity(PCS)5000 ABS。LUTE MAXIMUM RATINGS(Ta=25unless。therwise n。ted)Parameter Symbol Value Unit Drain-Source Voltage Vos 30 v Gate-Source Voltage VGs 土20v Continuous Drain Current(Ta=25）lo 90 A Continuous Drain Current(Ta=100）lo 53 A Pulsed Drain Current 1l IDM 330 A Singel Pulsed Avalanche Energy EAs 240 mJ Power Dissipation Po 46 w Thermal Resistance什om Junction t。CaseVa町th)Vcs=V，田，lc=250A1.5 2.5 v V田10V,lo=30A 3.6 4.2 Drain唱。ur田on-resis恒neeCS Ros(cn】mo V回=4.5V,lo=20A 5.2 7.0 Dynamic charac饱risticsInput Capaci恒n四。圄 1950 Output Capacitance Q幽Vos=15V,Ves=OV,f=1MHz 320 pF Reverse T阳nsfer Capacitance G回 240 Swl伽hlng characteristics Tum-on delay回mefdcon)13 Tum-on rise time 1r Voo=15V,lc=30A,36 Tum-o怦delaytime tel（，而VGS=10V,RG=3Q ns 43 Tum-o怦fall time t,16 Total Gate ChageQg 42 Gate-Source Charge Qgs VDS=15V,ID=30A,3.9 nC VGS=10V Gate-Drain Chage句d 14 s。urc:e-Drain Diode charactariati臼Diode Forward voltageC3l V田V田OV,ls=1A 1.2 v Diode Forward currentC4 Is 90 A N。rtes:1.Repetitive Rating:pulse width limited by maximum junction temperature2.EAS Condition:TJ=25，Voo=15V,RG=25 0,L=0.5mH3.Pulse Test:pulse widthS:300s,duty町cles:2%4.Sur如ce Mounted on FR4 Boa时，国10sec深圳市骊微电子科技有限公司铨力半导体代理商剑”。1WERAP90N03Q N-Channel Enhancement MosfetDATA SHEET Test Circuit Q 9 Qgs 10V Ve,sCharge _I.一Flgure1：“幅Cha咱e 1l锚tCircuit&Vii阳.vefonn90%,t-f1叭Ld份10i:il！11i：骨一t。甘一一90%10%寸I 1,0%干VGs：:!l ！Li:-1.,、lVosVosFigura 2:RaslsUva Switching Test Circuit&Wavafonns BVossJAS 飞V1vfi T 1tp Figure 3:Unclamped Inductive Switching Tut Circuit&W回vefonns深圳市骊微电子科技有限公司铨力半导体代理商AP90N03Q N-Channel Enhancement MosfetTypical Performance Characteristics Flgure1:Output Characteristics 80 60 40 20。2 3 5 Figure 3:0n-resistance vs.Drain Cur陪nt6.0 RDS(ON)(mO)5.0 VGs=4.5V4.0 I 一一一VGs=:10V 3.0 2.0 1.0 lo A)0 10 20 30 40 Figure 5:Gate ChageCharac恒istics 10 8 6 4 2 0 0 VGS(V Vos=25V lo=20A 9 Qg(nC)18 27 揭45 剑”。1WERDATA SHEET Figure 2:Typical TansfeCharacteisti臼”。恒 回40 到。1.0 2.0 3.0 4.0 5.0 6.0 1a3 1a2 101 Figure 4:Body Diode Charac恒risti臼ls(A)1二L-卢:1i,1 百 /i-J-25(VGS节V一Vso(V)1CL 0.2 0.4 0.6 0.8 1.0 1.2 1A 1.6 Figure 6:cap邵阳neeCharacteristics C(pF)2800 2400 2000 1600 1200 600 400 0 0 lBS气c，蝇“11，、，6 12 18 24 1.8 30 深圳市骊微电子科技有限公司铨力半导体代理商AP90N03Q N-Channel Enhancement MosfetFigure 7:Normalized B陪akdown Voltage vs.Junction Temperature VBR(DSSJ(V)1.3 1.2 2 1.1 飞1.0 0.9 可）号100岳。50 100 1目200Figura 9:Maximum Safe Opera四ngArea lo(A)1000 l三丑.imi国lDSfon 100 10 0.1 0.1 厅c=25$Ingle p!Jlse 1 卡、100 I 飞俑ma、国V10 100Figure.刊：Maximum E何activeTransient Thermal Impedance,Junction-to-case.Zth叶剑/W)101 10 10-3剑”。1WERDATA SHEET Figure 8:Normalized on R臼is恒n饵vs.Junction Temperature 2阳崎n)(mn)2 r、!,-100-60。可50 10050 200 Figure，。：Maximum Continuous D阳in Current vs.Case Tempeature120 100 飞飞飞飞飞卜80 60 40 且Tc（20 0 25臼75100 125 1由175深圳市骊微电子科技有限公司铨力半导体代理商AP90N03Q 111 p。1WERN-Channel Enhancement MosfetDATA SHEET PDFN3X3 Package lnfi。rrnation c。Mr.IONMM MIN N。MMAX A 0.70 0.7S 0.85 Al I 0.05 b 0.20 0.30 0.40 c 0.10 0.152 0.25。3.15 3.30 3.45。13.00 3.15 3.25 02 2.29 2.45 2.65 干cE 3.15 3.30 3.45 El 2.90 3.05 3.20 EZ 1.54 1.74 1.94 EJ 0.28 0.48 0.65 E4 0.37 0.57 0.77 尸E3ES 0.10 0.20 0.30 e 0.60 0.65 0.70 K 0.59 0.69 0.89 L 0.30 0.40 0.50 ll 0.06 0.125 0.20 I。0.075 0.13。10 12 14 深圳市骊微电子科技有限公司铨力半导体代理商