AP90P03Q p-mos管30v60a丝印90P03Q参数_骊微电子.pdf

AP90P03Q P-Channel Enhancement MosfetIIIP。1WERDATA SHEET Feature-30V,-60ARos IDM-300 A Singel Pulsed Avalanche Ene咱y2)EAS 100 mJ Power Dissipation Po 42 w Thermal Resis恼neefrom Junction to Case(4 Re.Jc 2.85 川Junction Temperature TJ 50 Storage丁丽mperatu阳TSTG 55-+150 深圳市骊微电子科技有限公司铨力半导体代理AP90P03Q 剑”。1WERP-Channel Enhancement Mosfet DATA SHEET MOSFET ELECTRICAL CHARACTERISTICS(T a=25unless otherwise noted)Pa ram”r static CharacterlsU臼Drain回ur四breakdownvol闻自Zero gate voltage drain凶rrentGate-body lea阳ge current Gate th陪sholdvol恒geC3Drain唱。ur田on-resis恒neeCS Dynamic charac饱risticsInput Capaci恒n四Output Capacitance Reverse T阳nsfer Capacitance Swl伽hlng characteristics Tum-on delay回meTum-on rise time Tum-o怦delaytime Tum-o怦fall time Total Gate ChageGate-Source Charge Gate-Drain Chages。urc:e-Drain Diode charactariati臼Diode Forward voltageC3l Diode Forward currentC4 N。rtes:Symbol V(BR)DSS loss IGSS Va町th)Ros(cn】。圄Q幽G回fdcon)1r tel（，而t,Qg Qgs 句dV田Is Tut Condition V臼OV,le=-2501JA Vos=-30V,VGs=OV VGS士20V,Vos=OVVcs=V，田，lc=-250AV田10V,ID=-30A V回=-4.5V,lo=-20A VDs=-15V,Vas=OV,f=1MHz VDD=-15V,lo=-17A,VGS=-10V,RG=30 VDS=-15V,ID=-17，人VGS=-10V V田OV,ls=-1A 1.Repetitive Rating:pulse width limited by maximum junction temperature2.EAS Condition:TJ=25，Voo=-15V,RG=25 O,L=0.5mH3.Pulse Test:pulse widthS:300s,duty町cles:2%4.Sur如ce Mounted on FR4 Boa时，国10secMin Type M缸Unit-30 v A 土100nA-1.0-1.5-2.5v 7.08.5mo 1012 2000 2四 pF 270 10 8 ns 43 18 36 5.3 nC 8.8 -1.2v-60A 深圳市骊微电子科技有限公司铨力半导体代理AP90P03Q P-Channel Enhancement Mosfet Typi臼l Performance Characteristics Figure1:Output Charac抽ristics80 60 40 20 VGS=-3V 1.0 2.0 3.0 4.0 5.0 Figure 3:0n陪sistance vs.Drain Curr朋t14 RDS(ON)(m!l)12 VGS=-4.5V10 8 6 VGs叫ov4-lo(A)0 10 20 30 40 50 60 Figure 5:Gate Chage Charac恒ristics-VGS(V)10 8 Vcs=-15V lo斗5A 6 4 I/Qg(nC)2。10 20 30 40 50 剑”。1WERDATA SHEET Figure 2:Typical Transfer Characteristi臼ID.A100一80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 4:Body Diode Characteristics，。-ls(A)7 7 TJ=150 1 TJ=-25 lL!50、7 0.1 -V：回（呵o.o 0.2 o.4 o.e o.s 1.0 1.2 1.4Figu阻6:Capacitance Cha阻cteristicsC(pF)1cr 112 0 、5 C跚 l.lI回-VI时（V)10 15 20 25 30 深圳市骊微电子科技有限公司铨力半导体代理AP90P03Q P-Channel Enhancement Mosfet Figure 7:Normalized Breakd。m Voltage vs.Juncti。n Temperature-Ve盹DSS)1.3 1.2 1.1 二，1.0-0.9 100-50。-，可（50 一J”100 150 200 Figure 9:Maximum Safe Operating Area -ID（，。10 E三三2imiled Ros on 102 101 t二/.g pulse 10 11 0.01Fig1m 0.1 l 飞,_ 100 s 何胃口 1臼m 1oom,-Vos IV:10 100 Transient Thermal Impedance,Junction-t。Ambient10 100 1 10-210 10 101 剑”。1WERDATA SHEET Figure 8:Normalized on Resis恒nee vs.Junction Temperatl用Ros(on)1.75 1.5 1.25 1.0 0.75-100-50。可（出100 150 200 Figure 10:Maximum Continuous Drain Current vs.Ambient Temperature-ID(A)20 15 10 5、卜卜 TA）0 25回75100 125 150 175 深圳市骊微电子科技有限公司铨力半导体代理AP90P03Q 剑”。1WERP-Channel Enhancement Mosfet DATA SHEET Test Circuit Gate Charge Test Circuit&Waveform Vgs ChageResistive Switching Test Circuit&Waveforms RL Vds Vgsl.r 10%Vds Unclamped Inductive Switching(UIS)Test Circuit&Waveforms EAA=112 u：Vds Id Vds 江JVgsl.司川ARDiode Recovery Test Circuit&Waveforms Vds Q!T=:f阳Vds-lsdVdd 深圳市骊微电子科技有限公司铨力半导体代理剑”。1WERAP90P03Q P-Channel Enhancement Mosfet DATA SHEET PDFN3X3-8L Package Information 回，kr 02 工01 U 4 u口卫i旧bRECOMMENDED LAND PATTERN DFN3.3x3.38 SYMBOLHINCHES MILLIMETERS 2.6 MAX.MIN.MAX.工0.47 0.039 0.028 1.00 0.002 0.000。仍 十守。，0.014 0.010 0.35 MIN.。.70。.00A1 0.25 b 0.54 日日F寸iJ二坠0.008 D 01 02 0.128。1000.138 0.138 0.006 0.122 0.120 0.093 0.20 3仍一3.250.14 c 国的D0.122 3.50 3.10 3.10 E 2.90 E1 NIT:mm 0.122 0.114 0.072 0.065 1.64 1.84 0.65 BSC 0.32 0.52 E2。.026 BSC e 0.020 0.013 H 0.031 0.022 0.023 0.010。790.55 0.59 0.25 K L 深圳市骊微电子科技有限公司铨力半导体代理