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UNISONIC TECHNOLOGIES CO.,LTD BSS127Power MOSFET0.021A,600V ENHANCEMENT N-CHANNEL MOSFETDESCRIPTIONThe UTC BSS127 is an enhancement N-channel mode PowerFET,it uses UTCs advanced technology to provide customers ultra high switching speed and ultra low gate charge.FEATURES*RDS(ON)600 VGS=4.5V,ID=0.016ARDS(ON)500 VGS=10V,ID=0.016A*Ultra Low Gate Charge(Typical 140nC)*Ultra High Switching SpeedSYMBOLORDERING INFORMATIONOrdering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing BSS127L-AE2-RBSS127G-AE2-R SOT-23-3 G S D Tape ReelBSS127L-AE3-RBSS127G-AE3-RSOT-23 G S D Tape ReelNote:Pin Assignment:G:Gate S:Source D:Drain MARKING深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司BSS127Power MOSFETABSOLUTE MAXIMUM RATINGS(TA=25C,unless otherwise specified)PARAMETERSYMBOLRATINGSUNITDrain-Source Voltage VDSS600VGate-Source Voltage VGSS20VTA=25C0.021AContinuous TA=70C ID 0.017ADrain Current Pulsed(TA=25C)IDM0.09APeak Diode Recovery dv/dt dv/dt 6 kV/s Power Dissipation(TA=25C)PD0.3WJunction Temperature TJ-55 +150C Storage Temperature Range TSTG-55 +150C Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.THERMAL CHARACTERISTICSPARAMETERSYMBOLRATINGSUNITJunction to Ambient JA325C/WELECTRICAL CHARACTERISTICS(TJ=25C,unless otherwise specified)PARAMETERSYMBOL TEST CONDITIONS MIN TYP MAX UNITOFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250A,VGS=0V600 VForwardVGS=+20V,VDS=0V+10+100nAGate-Source Leakage Current Reverse IGSS VGS=-20V,VDS=0V-10-100nAVGS=0V,VDS=600V,TJ=25C 0.1ADrain-Source Leakage Current ID(OFF)VGS=0V,VDS=600V,TJ=150C10AON CHARACTERISTICS Gate Threshold Voltage VGS(TH)VDS=VGS,ID=8A 1.4 2.0 2.6V VGS=4.5V,ID=0.016A 330 600 Static Drain-Source On-State Resistance RDS(ON)VGS=10V,ID=0.016A 310 500 Forward Transconductance gFS|VDS|2|ID|RDS(ON)MAX,ID=0.01A 0.007 0.015 S DYNAMIC PARAMETERS Input Capacitance CISS 2128pFOutput Capacitance COSS 2.43pFReverse Transfer Capacitance CRSS VGS=0V,VDS=25V,f=1.0MHz 1.0 1.5pFSWITCHING PARAMETERS Total Gate Charge QG 0.070.10nCGate to Source Charge QGS 0.310.5nCGate to Drain Charge QGD 0.651.0nCGate Plateau Voltage Vplateau VGS=010V,VDS=300V,ID=0.01A 3.56V Turn-ON Delay Time tD(ON)6.119.0nsRise Time tR 9.714.5nsTurn-OFF Delay Time tD(OFF)1421nsFall-TimetF VDD=300V,VGS=10V,ID=0.01A,RG=6 115 170nsSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS TA=25C 0.016AMaximum Pulsed Drain-Source Diode Forward Current ISM TA=25C 0.09ADrain-Source Diode Forward Voltage VSD IF=0.016A,VGS=0V,TJ=25C0.82 1.2V Body Diode Reverse Recovery Time trr 160240nsBody Diode Reverse Recovery Charge Qrr VR=300V,IF=0.016A,dIF/dt=100A/s 13.2 19.8CNotes:1.The Power Dissipation of the package may result in a lower continuous drain current.2.Pulse Test:Pulse Width 300s,Duty Cycle 2.0%.深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司BSS127Power MOSFETTEST CIRCUITS AND WAVEFORMS深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司BSS127Power MOSFETTYPICAL CHARACTERISTICS深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司BSS127Power MOSFETUTC assumes no responsibility for equipment failures that result from using products at values that exceed,even momentarily,rated values(such as maximum ratings,operating condition ranges,or other parameters)listed in products specifications of any and all UTC products described or contained herein.UTC products are not designed for use in life support appliances,devices or systems where malfunction of these products can be reasonably expected to result in personal injury.Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.UTC reserves the right to make changes to information published in this document,including without limitation specifications and product descriptions,at any time and without notice.This document supersedes and replaces all information supplied prior to the publication hereof.深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司
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