PCBIT实验进展.ppt

,*,单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,PCBIT,实验进展,Gongyu,Jiang,October 29th,2008,Overview,PCBIT-MS,系统总略,离子阱注入条件优化,可调分压电路,中科大瓷片阱的测试,结构性功能测试：机械精度、耐受电压、电荷积累,质量分辨能力,扫描速度,激发电压相位,背景,气压,场轴电位（端盖）,MS,n,调试,质量隔离,选择质量激发,场轴电位电压（轴向）,Skimmer,Ion Guide RF,PoleA,PoleB,AP,EC1,EC2,注入条件优化现状,原有条件,:,阱中轴电位,30V,EC1=35V EC2=104V,Ion Guide Offset=31V Skimmer=35V,现有条件,阱中轴电位,0V,EC1=35V EC2=104V,Ion Guide Offset=31V Skimmer=35V,外部可调分压电路,瓷片阱的测试（老）,A,B-C,D-E,F,G,H-I,J-K,L,Edge,Incline Angle(degree),Width from this to next,boundary(mm,),Detail,A-A,-0.08974,1.554,Corner Electrode Upper,B-B,-0.03532,0.132,Insulate Gap 1,C-C,-0.04678,1.405,Side Electrode Upper,D-D,-0.00096,0.136,Insulate Gap 2,E-E,-0.00096,1.192,Mid Electrode,(part upper than slit),F-F,-0.06969,0.753,Ion Outlet Slit,G-G,0.004773,1.249,Mid Electrode,(part lower than slit),H-H,0.056326,0.131,Insulate Gap 3,I-I,0.024821,1.410,Side Electrode Lower,J-J,0.050597,0.134,Insulate Gap 4,K-K,0.013365,1.493,Corner Electrode Lower,L-L,0.093559,-,耐压值：,250V,0-p,瓷片阱的测试（新）,Table 1.The measure geometry data from the new ceramic PCBIT,Edge,Width from this to next,boundary(mm,),Detail,A-A,1.671,Corner Electrode Upper,B-B,0.210,Insulate Gap 1,C-C,1.390,Side Electrode Upper,D-D,0.209,Insulate Gap 2,E-E,1.220,Mid Electrode,(part upper than slit),F-F,0.835,Ion Outlet Slit,G-G,1.225,Mid Electrode,(part lower than slit),H-H,0.205,Insulate Gap 3,I-I,1.391,Side Electrode Lower,J-J,0.204,Insulate Gap 4,K-K,1.667,Corner Electrode Lower,L-L,-,耐压,350V,电荷积累问题,通过表面喷涂抗静电图层可暂时解决,寿命：电导半衰期,80h,效果：不再出现系统工作一段时间即出现无离子信号现象,分辨与峰形异常有改善,质量分辨能力进展,质量分辨,2500,影响条件：扫描速度,Figure 3.Resolution Power test by(SIPI5286 M+H,+,=426.3)in variable scan speed.,Dipole Amplitude,V,p-p,(Left to Right:0.9V,0.7V,0.55V,0.35V,0.25V,Resolution:1145,1340,1659,2059,2240),2944,Th,/s,1472,Th,/s,736,Th,/s,368,Th,/s,245,Th,/s,影响条件：激发相位,在,1/3,分频下,在,56DDS/192DDS,条件下出现分辨率低点,其余相位分辨持平,影响条件：背景气压,影响条件：场轴电位,MS,n,:,质量隔离,可实现分辨,0.8,Th,的单质量隔离,可选择,1,4,Th,的质量隔离范围,MS,n,：质量选择激发,可选择性激发,SIPI5286,的,35,Cl,离子丢失水分子和,2,个水分子,可选择碎裂亚甲基蓝离子,下一步的工作,PCBIT,具有分辨率时的质量扩展,MS-MS,实验条件摸索,测试更多不同分压比的条件,