AP18P30Q -20a -30v耐压的p型mos 丝印18P30Q参数_骊微电子.pdf

AP18P30Q P-Channel Enhancement MosfetFeature-30V,-20ARos ON)14m QVGs=-10V TYP:10.5 m QRos。N)19mQVGs=-4.5V TYP:15.5 mQTrench DMOS PoweMOSFETFast SwitchingExceptional on-resistance and maximum DC current capabilityApplicati。nDC/DC ConveterLoad Switch for Portable DevicesBatteySwitchPackage Marking and Ordering lnformati。nDevice Marking 18P30Q Device AP18P30Q Device Package PDFN3X3 Reel Size 13 inch 剑”。1WERDATA SHEET G Schematic Diagram 0 0 D D A以以X18P30Q S S S G Marking and pin Assignment Tape width Quantity(PCS)5000 ABS。LUTE MAXIMUM RATINGS(Ta=25unless。therwise n。ted)Parameter Symbol Value Unit Drain-Source Voltage Vos-30v Gate-Source Voltage VGs 20 v Continuous Drain Current(Ta=25）lo-20A Continuous Drain Current(Ta=100）lo-13A Pulsed Drain Currenr 1l IDM-80A Singel Pulsed Avalanche Energy 4l EAs 140 mJ Power Dissipation Po 30 w Thermal Resistance什om Junction t。CaseReJc 4.1/W Junction Temperature TJ 150。CStorage Temperature Tsrn-55-+150。C深圳市骊微电子科技有限公司铨力半导体代理AP18P30Q 剑”。1WERP-Channel Enhancement Mosfet DATA SHEET MOSFET ELECTRICAL CHARACTERISTICS(T a=25unless otherwise noted)Pa ram”r static CharacterlsU臼Drain回ur四breakdownvol闻自Zero gate voltage drain凶rrentGate-body lea阳ge current Gate th陪shold vol恒geDrain唱。ur田on-resis恒nce!2Dynamic charac饱risticsInput Capaci恒n四Output Capacitance Reverse T阳nsfer Capacitance Swl伽hlng characteristics Tum-on delay回meTum-on rise time Tum-o怦delaytime Tum-o怦fall time Total Gate ChageGate-Source Charge Gate-Drain Chages。urc:e-Drain Diode charactariati臼Diode Forward voltageC:Zl Diode Forward current1问Body Di。de Reverse Recovery Time Body Di创e Reve回Raco帽yCha咱eN。tes:Symbol V(BR)DSS loss IGSS Va町th)Ros(cn】。圄Q幽G回id(on)1r tel（，而t,Qg Qgs 句dV田Is t厅Q Tut Condition V臼OV,le=-2501JA Vos=-30V,VGs=OV VGS土20V,V臼OVVcs=V，田，lc=-250AV田10V,ID=-12A V回=-4.5V,lo=-BA Vos=-15V,Vas=OV,f=1MHz VoD=-15V,lo=-12A VGS=-10V,RG=2.50 VDS=-15V,ID=-10,人VGS=-10V V田OV,ls=-10A TJ=25,IF=-20A,di/dt=1 OOA/us T25,IF=-20A,di/dt=1 OOA/us 1.Repetitive Rating:pulse width limited by maximum junction恒mperature2.Pulse Test:pul揭widthS:300间，duty cycles:2%3.Surface Mounted on FR4 Boa时，恒10sec4.L=OSmH,Voo=-15叽RG=250,TJ=25Min Type M缸Unit-30 v A 土100nA-1.5-2.5v 10.514mo 15.519 2863 349 pF 237 11.5 38.5 ns 89 19 54.8 7.5 nC 12.5 -1.2v-20A 14 ns 2.4 nc 深圳市骊微电子科技有限公司铨力半导体代理AP18P30Q 剑”。1WERP-Channel Enhancement MosfetDATA SHEET T,est Circuit&Waveform G副e Char,ge T,e,st Ci,cuit晶W:arve，ormVg1s Qg-11ovVds.On由目Resislive Sw悔ching Test Circuit&Wavercrm RL Vd VgS90%L主J岳阳Vclcl叫牺vgn.r U nelaimped Ind uetive Swi障hing1(UIS)Ci剧，自Wave阳rmVd由呢飞lg,.蛐1r.2 LI,.BVr,Vdl Vgli!I-ti蝴IO,iod e Re-co，明y Test Circuit晶呐归1l(!i阳msVdd Veld 深圳市骊微电子科技有限公司铨力半导体代理AP18P30Q P-Channel Enhancement Mosfet 剑”。1WERDATA SHEET 丁ypical Performance Characteristics Fig.1 PoweDissipation Deating Curve 120、100 町、晴20 1I”口。40 80T.1】120 唱60Fig.3 Typical Output Characteristics-1501 飞且.0:E q-90，.冒u；!;.Vos唱v v.;.2v GS。-1-2-3-4 VDS,Drefn(o So1,.1rc唱Vol恒9噎(V)Fig.5 Typical Transfer Characteristics-200OOO EdnuE4 zrchz运UEEBd。-4.I.,.;.十.-.2-4毛Sa.VGS,Gate to Source Vohe雹e(V)Fig.2 Avalanche Energy Deating Curve 归，Junction Temperature hunvnu ORuva”邑4EZUEd120 l 一十”；！100：一.，.一、汇唱卡一：一一jl寸20；导，入斗！卡。40 匾。T.1（】20,so Fig.4 Tansconductance vs.Drain Current 0 0，甸回，Top ID!laltOm、KT、171.T，.b 1.）飞-.1-1:1冒J:25,二川、主)j T，军15卡i;1!;i.J惜它0642 芭EEEU吕EUE帽在凰”52040-60 圄80100 l,D.Dr.eln Current(A)Fig.6 State Resistance vs.Drain Current 25-30,.,.主l T.1=205 C-，f：j；皇25！们十7 1-哥p.3.S v 7._ 烟抽阴阳空20十？：.a币，似Vo-s-4 5V 歪J 斗，护t才：.lies=.sv,.,._.国L-,-;!u吕二Fv 4兰一每15,i年i-,-;-田二主；.一I:1一气a:？；8 10卡i 5.1:t:：.；：二；二：；二；：。，；皇o,t。20-40-eo-so斗。tlD,Drain C1UTrent t问深圳市骊微电子科技有限公司铨力半导体代理AP18P30Q P-Channel Enhancement Mosfet 剑”。1WERDATA SHEET Fig.7 State Resistance vs_ Drain Current 25C-SOT画 j T25吨.主2;c,5,.,-！ch主E l t i;/:From电帽”抽出m:i VM=.J(!,4 2。,o 20忽EQg(nc)40 Fig.12 Gate Threshold Voltage vs.Junction TemperatLre。-0.5-J!.与1.S-i-2.5-3-25 0 25 5.0 75 100 1.2雪150可rc1深圳市骊微电子科技有限公司铨力半导体代理AP18P30Q P-Channel Enhancement Mosfet 剑”。1WERDATA SHEET Fig.13 On-Resistance Variation vs.Junction Tempeature2.5.1 I 10=12 A 军2VG$:-l0V I.言1.5二E。5LLLLl l I I150 17:5。?-55 25 0 T J.Junction Ten唱pertur-e吨：Fig.15 Body Diode Foward Voltage Vs Reverse Drain Current 4军冒理声oh临ME一0.0 0.2 0.4 0.6 0.8 LO 1.2 1.4 VF.Forward V创tag创V】Fig.14 Maximum Dain Current vs.Case Temperature-40.0-350-30.0言25.06 20.0 E二百唱5.0Cl 0咽。.0-5.口。、025 50 75唱00唱25T,e.,Case T.rnperat.ure（C)150 深圳市骊微电子科技有限公司铨力半导体代理AP18P30Q P-Channel Enhancement MosfetPackage Mechanical Data1-e-101 I I D 且PDFN3X3 c 剑”。1WERDATA SHEET COMMON M MM MIN NOM MAX L A 0.70 0.75。酬85Al J 0.05 b 0.20 0.30 0.40 c 0.10。.1520.25 D 3.15 3.30 3.45。13.00 3.15 3.25 02 2.29 2.45 2.65 E 3.15 3.30 3.45 El 2.90 3.05 3.20 E2 1.54 1.74 1.94 E3 0.28 0.48 0.65 E4 0.37 0.57 0.77 ES 0.10 0.20 0.30 e 0.60 0.65 0.70 K 0.59 0.69 0.89 L 0.30 0.40 0.50 Ll 0.06 0.125 0.20。0.075 0.13 10 12 14 深圳市骊微电子科技有限公司铨力半导体代理