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1、AP2080Q N-Channel Power MOSFETT Capable of 2.5V Gate Drive T Small Size&Ultra_L。w RoscoN)T R。HSc。mpliant&Hal。gen-FreeG Description AP2080Q series are from Advanced Poweinnovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.It provi
2、des the designewith an extreme efficient device for use in a wide range of power applications.Symbol Parameter Drain-Source Voltage Gate-Source Voltage Drain Current,VGs 4.5V3 Vos VGs loTA=25 loTA=70 loM PoTA=25 Tsrn TJAIIP。iWERDATA SHEET D BVoss Ros(ON)I 3D 20V 8.SmO30Av A A A 24 w-55 to 150-55 to
3、150 喜一旦叩Parameter Maximum Thermal Resistance,Junction-case Maximum Thermal Resistance,Junction-ambient3 Value 5 26 川ww深圳市骊微电子科技有限公司铨力半导体代理AP2080Q N-Channel p。，werMOSFETElectrical Characteristics飞25。C(unless。therwise specified)Symbol BVoss RoscoN)VGS(th)9ts loss IGss Og Q目sQ9d（on)（off)Ciss Coss C回Rg
4、Notes:Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain（”Miller）Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
5、 Input Capacitance Output Capacitance f一Reverse Transf,Gate Resistance f(1.Pulse width limited by Max.junction temperature.2.Pulse testTest Conditions Min.V Gs=OV,10=250uA 20 V Gs=4.5V,10=20A VGs=2.5V,1rr12A Vos=VGs,10=1mA 0.6 Vos=SV,10=20A V0s=16V,VGs=OV VGs=,:!:.12V,Vos=OV 10=20A V0s=10V VGs=4.5V
6、V0s=10V 飞lo=1A RG=3.30 手；VGs=5V ;,队N W”f斗。问Hz守 剑”。1WERDATA SHEET Typ.Max.Units v 8.5 9.8 mo 14 no 0.9 v 130 s 10 uA +100 nA62 99.2 nC 4 nC，李卢-1)nC 1 门S面、29 巨F飞吗亏，100、门SQ、，门SAOOO 6400 pF 780 pF 625 pF 1.4 2.8。3.Surface mounted on 1 in2 2oz copper pad of FR4 board,t三10sec;135口C/W when mounted on min.c
7、opper pad.4.Maximum current limited by package.深圳市骊微电子科技有限公司铨力半导体代理剑”。1WERDATA SHEET T AP2080Q N-Channel p。，werMOSFET手sv.=-i.1JV t-1-+-l-i-t-1-!-an 主HRESGhqad 25节1.ov-4.SJl:I J:sv:rG=Iov I T,4，“n 气咽马Hmuk送hvSEqahI-+-l-i-，了l-j J 1-i-1 ！l！lllil lllll1.1,.,u u V ns,Drain-to-Source Voltage？Fig 1.Typical
8、Output Characteristics：阳气。EGiM1-+卡i1I SI IN T1,Junction Temperature(C)Fig 4.Normalized On-Resistance.,-111 v.s.Junction Temperature,寸：-j_-量!150,L iLli l上,.-!-l-聋gSAh，晶宫EKS迦h仁“m 气、同L斗i-T-I I I I I I I I I I I I I I T寸TI I I I I I I I I I I I I I I I I I I I I 个寸寸一一一十I I I I I I I I I I I I 也2 气SII SI
9、 lH T1,Junction Tem严r酬，e(C)-111.,Fig 6.Gate Threshold Voltage v.s.Junction Temperature Vsn,Source-to-Drain Voltage(V)Fig 5.Forward Characteristic of Reverse Diode 深圳市骊微电子科技有限公司铨力半导体代理剑”。1WERDATA SHEET f=l.OMHz C;,eehv AP2080Q N-Channel p。，werMOSFEThg唱GABhSB国saeb问BA1 V圃，Drai，属部Source Volt惚re(J;.JFig
10、8.Typical Cap!1cice ell 飞A4“n 1#Q G,Total Gate Charge(nC)rncs，飞e匠也1Il巳e r:F反可且民伊f气r 110.0 I 11门川川，。t孔。I、-蝇-市？！-、坦坦Fig 7.Gate Charge Characteristics 气范白同，.”Fig 10.Effective Transient Thermal Impedance 气甲也HRK且GSEq战qh”盖氯豆豆t,Pulse Wi，邮雹（s)O.Hl.”重VDS=SV 气范hEKSUSERHaqh TA,Ambient Temperature(C)2“0,i,.Fig
11、12.Drain Current v.s.Ambient Temperature V筒，Gate-to、Source Voltage？Fig 11.Transfer Characteris“cs 深圳市骊微电子科技有限公司铨力半导体代理剑”。1WERDATA SHEET AP2080Q N-Channel p。，werMOSFET _T-i1_5_;EE。在SSTEa也r 气已是EEEM1 2.SV YGS1-I-.W 0，Fig 13.Typ.Drain-Source on State Resistance 10 41 II In,Drain Current(A)l 深圳市骊微电子科技有限公
12、司铨力半导体代理剑”。1WERAP2080Q DATA SHEET N-Channel p。，werMOSFETDimensi。ns(DFN33)D Of 司 口0干1D2 自tRECOMMENDED LAND PAITERN INCHES 2.6 MIN.MAX.UlJuL 1047 0.028 0.039 0000 0002-。.35。.0100.014 一卡吨国F 0.14 0.20 0.006。日08严3.10 3.50 0.122。138，D1 3.05 3_25 0.120 0.128 3日卫D2 2.35 2.55 0.093 0 1日。p E 3.10 3.50 0.122。138Ec1 2.90 3.10 0.114 0.122 UNIT:mm E2 1.64 1.84 0.065 0.072 e 0.65 BSC 0026 BSC H。.320.52 0.013。.020。正0.79。0230.031 L 0-25 0.55 0.010 0022 深圳市骊微电子科技有限公司铨力半导体代理
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