AP2045Q 20V 60A bms mos管 丝印2045Q_骊微电子.pdf

AP2045Q N-Channel Enhancement MosfetFeature 20V,60ARos ON)5.2m Q VGs=4.5V TYP=4.3 m QRos。N)7.8m Q VGs=2.5V TYP=7.8 m QAdvanced Tench TechnologyLead fee product is acquiredExcellent Ros ON)and Low Gate ChargeApplicati。nPWM appli臼tionsLoad SwitchPower managementPackage Marking and Ordering lnformati。nDevice Marking 20450 Device AP2045Q Device Package PDFN3X3-8L Reel Size 13 inch 剑”。1WERDATA SHEET Schematic Diagram D O O D 8 7 6 S A以以X20450 S S S G Marking and pin Assignment Tape width Quantity(PCS)5000 ABS。LUTE MAXIMUM RATINGS(Ta=25unless。therwise n。ted)Parameter Symbol Value Unit Drain-Source Voltage Vos 20 v Gate-Source Voltage VGs 土12v Continuous Drain Current(Ta=25）lo 60 A Continuous Drain Current(Ta=100）lo 40 A Pulsed Drain Currenr 1l IDM 200 A Singel Pulsed Avalanche Energy EAs 60 mJ Power Dissipation Po 30 w Thermal Resistance什om Junction t。CaseVa町th)Vos=V，田，lo=250A0.5 0.7 0.9 v V田=4.5V,lo=30A 4.3 5.2 Drain唱。ur田on-resis恒neeCS Ros(cn】mo V回2.5飞I,lo=20A 5.8 7.8 Dynamic charac饱risticsInput Capaci恒n四。圄 1832 Output Capacitance Q幽Vos=10V,Ves=OV,f=1MHz 289 pF Reverse T阳nsfer Capacitance G回 271 Swl伽hlng characteristics Tum-on delay回mefdcon)15 Tum-on rise time 1r Voo=10V,lc=25A,37 Tum-o怦delaytime tel（，而VGS=4.5V,RG=1.80 ns 52 Tum-o怦fall time t,21 Total Gate ChageQg 23 Gate-Source Charge Qgs VDS=1 OV,ID=25A,4.5 nC VGS=4.5V Gate-Drain Chage句d 7.3 s。urc:e-Drain Diode charactariati臼Diode Forward voltageC3l V田V田OV,ls=25A 1.2 v Diode Forward currentC4 Is 60 A N。rtes:1.Repetitive Rating:pulse width limited by maximum junction temperature2.EAS Condition:TJ=25，Voo=15V,RG=25 0,L=0.5mH3.Pulse Test:pulse widthS:300s,duty町cles:2%4.Sur如ce Mounted on FR4 Boa时，国10sec深圳市骊微电子科技有限公司铨力半导体AP204SQ 剑”。1WERN-Channel Enhancement MosfetDATA SHEET Test Circuit&Waveform Gate Charge Test Cicuit&Waveform Vgs lgJL Charge Resistive Switching Test Circuit&Waveforms RL Vds Vds LciVg三LUnclamped Inductive Switching(UIS)Test Circuit&Waveforms Vds E,s/1/2 L BVnss Id Vds 立l,.,.Id VgVl_ Diode Recovery Test Circuit&Waveforms arr-J ldtisd Vdd 深圳市骊微电子科技有限公司铨力半导体AP204SQ N-Channel Enhancement MosfetTypical Performance Characteristics Figure1:Output Characteristics lo(A)100一4.5V 回80 40 20。V腿2 3 4 Figure 3:0n-resistan四vs.Drain Current 8.0 R田(ON)(mC)7.0 6.0 VGS=2.5V 5.0 4.0 Vas=4.5V 3.0.2.0 lo:J气）0020 30 Figure 5:Gate Charge Characteristics VGs(V)5 Vos-10V 4 lo=25A 3 2。4 Qg(nC)a 12 v 18 20 5 40 24 剑”。1WERDATA SHEET Figure 2:Typi四l Transfer Charac饱时sti白100 ID(A)80 回40 20。0.4 0.8 1.2 1.5 1.8 2.2 Figure 4:Body Diode Characteristi臼ls(A)才c312 101E圃，l 介25”d乒fVas-OV一一Vso(V)10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 a4 Figure 6:Capaci恒nee Characteristi西C(pF)113 1D2 0 飞飞、C1e1 Cas&Cr回V回(V)5 10 15 20 自1.825 深圳市骊微电子科技有限公司铨力半导体AP204SQ N-Channel Enhancement Mosfet剑”。1WERDATA SHEET Figure 7:N。rmalized Breakdown Vol恒gevs.Junction Temperature VBR(DSSJ 1.3 1.2-_,-，”Tj(）1.1 1.0。.9回nu内UA唱nu。50 100 1出200Figure：Maximum Sa也Operating A陪alo(A)仁二二100。t-,-？1”二三旨 飞,/飞飞、但脑Llml制bys乓cs【叫陆Ing纠lapul、I-V田（Vu 100 10。.10.1 10 100 Flgure.11:Maximum E何ective Transier吐Thermal lmpedan饵，Junction-to-CaseZ血且/W)101 1oO 1 121o-:i1 u 1.r 105 14 103 才旷a101 1a 101 Figure 8:Normalized on Resis恒neevs.Junction Temper亩tu阳阳s(on)1.9 1.6 可（1.3 1.0 0.7-100-50。回100 150 200 Figure 10:Maximum Continuous Drain Current vs.Case Temperature le（.，。75 60 飞卜Tc（）45 30 15 0 25 50 75 100 125 150 175 深圳市骊微电子科技有限公司铨力半导体AP2045Q 剑”。1WERN-Channel Enhancement MosfetDATA SHEET PDFN3X3-8L Package Information。02 01 声日w1 wl叶十！剌8 COMMON DIMENSIONS(UNITS OF MEASURE=MILLIMETER SYMBOL MIN NOM MAX A 0.70 0.80 0.90 b 0.25 0.30 0.39 c 0.14 0.15 0.25 D 3.20 3.30 3.40 D1 3.00 3.15 3.30 D2 2.35 2.45 2.55 e 0.65 BSC E 3.25 3.35 3.45 E1 2.85 3.00 3.15 E2 1.635 1.735 1.835 H 0.33 0.48 0.63 K 0.585 0.685 0.785 L 0.30 0.40 0.50 L1 0.05 0.15 0.25 L2 0.15 e 8。10。12。深圳市骊微电子科技有限公司铨力半导体