半导体封装制程与设备材料知识介绍(课堂PPT).ppt

Click to edit Master title style,Click to edit Master text styles,Second level,Third level,Fourth level,Fifth level,Click to edit Master title style,Click to edit Master text styles,Second level,Third level,Fourth level,Fifth level,半导体封装制程与设备材料知识简介,Prepare By,：,William Guo 2007.11 Update,半导体封装制程概述,半导体前段晶圆,wafer,制程,半导体后段封装测试,封装前段（,B/G-MOLD）,封装后段（,MARK-PLANT）,测试,封装就,是將前製程加工完成後所提供晶圓中之每一顆,IC,晶粒獨立分離，並外接信號線至導線架上,分离,而予以包覆,包装测试直至,IC,成品,。,半,导,体,制,程,Oxidization,(,氧化处理,),Lithography,(,微影,),Etching,(,蚀刻,),Diffusion Ion,Implantation,(,扩散离子植入,),Deposition,(,沉积,),Wafer Inspection,(,晶圆检查,),Grind&Dicing,(,晶圓,研磨及,切割),Die Attach,(,上片,),Wire,Bonding,(,焊线,),Molding,(,塑封,),Package,(,包装,),Wafer Cutting,(,晶圆切断,),Wafer,Reduce,(,晶圆减薄,),Laser Cut&package saw,(,切割,成型,),Testing,(,测试,),Laser mark,(,激光印字,),IC,制造开始,前段結束,后段封装开始,製造完成,封 裝 型 式,(PACKAGE),Through Hole,Mount,Shape,Material,Lead Pitch,No of I/O,Typical Features,Ceramic,Plastic,2.54,mm,(100miles),8 64,DIP,Dual In-line,Package,Plastic,2.54,mm,(100miles),1 direction lead,325,SIP,Single In-line,Package,封 裝 型 式,Through Hole,Mount,Shape,Material,Lead Pitch,No of I/O,Typical Features,Plastic,2.54,mm,(100miles),1 direction,lead,1624,ZIP,Zigzag,In-line,Package,Plastic,1.778,mm,(70miles),20 64,S-DIP,Shrink,Dual In-line,Package,封 裝 型 式,Through Hole,Mount,Shape,Material,Lead Pitch,No of I/O,Typical Features,Ceramic,Plastic,2.54,mm,(100miles),half-size pitch in the width direction,2432,SK-DIP,Skinny,Dual,In-line,Package,Ceramic,Plastic,2.54,mm,(100miles),PBGA,Pin Grid,Array,封 裝 型 式,Surface,Mount,Shape,Material,Lead Pitch,No of I/O,Typical Features,Plastic,1.27,mm,(50miles),2 direction lead,8 40,SOP,Small,Outline,Package,Plastic,1.0,0.8,0.65,mm,4 direction lead,88200,QFP,Quad-Flat,Pack,封 裝 型 式,Surface,Mount,Shape,Material,Lead Pitch,No of I/O,Typical Features,Ceramic,1.27,0.762,mm,(50,30miles),2,4 direction lead,2080,FPG,Flat,Package,of Glass,Ceramic,1.27,1.016,0.762,mm,(50,40,30 miles),2040,LCC,Leadless,Chip,Carrier,封 裝 型 式,Surface,Mount,Shape,Material,Lead Pitch,No of I/O,Typical Features,Ceramic,1.27,mm,(50miles),j-shape bend,4 direction lead,18124,PLCC,Plastic Leaded,Chip Carrier,Ceramic,0.5,mm,32200,VSQF,Very,Small,Quad,Flatpack,Assembly Main Process,Die Cure,(Optional),Die Bond,Die Saw,Plasma,Card Asy,Memory Test,Cleaner,Card Test,Packing for,Outgoing,Detaping,(Optional),Grinding,(Optional),Taping,(Optional),Wafer,Mount,UV Cure,(Optional)Laser mark,Post Mold Cure,Molding,Laser Cut,Package Saw,Wire Bond,SMT,(Optional),半导体设备供应商介绍,-,前道部分,半导体设备供应商介绍,-,前道部分,常用术语介绍,SOP-Standard Operation Procedure,标准操作手册,WI Working Instruction,作业指导书,PM Preventive Maintenance,预防性维护,FMEA-,Failure Mode Effect Analysis,失效模式影响分析,SPC-Statistical Process Control,统计制程控制,DOE-,Design Of Experiment,工程试验设计,IQC,/OQC,-Incoming/O,uting,Quality Control,来料,/,出货质量检验,MTBA/MTBF-,Mean Time,between,a,ssi,s,t/Failure,平均无故障工作时间,CPK-,品质参数,UPH-Units Per Hour,每小时产出,QC 7 Tools(Quality Control,品,管,七工具,),OCAP(Out of Control Action Plan,异常改善计划,),8D(,问题解决八大步骤,),ECN Engineering,Change,Notice,(,制程变更通知,),ISO9001,，,14001,质量管理体系,前道,后道,EOL,Wire Bond,引线键合,Mold,模塑,Laser Mark,激光印字,Laser Cutting,激光切割,EVI,产品目检,SanDisk Assembly Process Flow,SanDisk,封装工艺流程,Die Prepare,芯片预处理,ie Attach,芯片粘贴,Wafer IQC,来料检验,Plasma Clean,清洗,Plasma Clean,清洗,Saw Singulation,切割成型,SMT,表面贴装,PMC,模塑后烘烤,SMT,（表面贴装）,-包括锡膏印刷,(Solder paste printing),置件,(Chip shooting),回流焊,(Reflow),DI,水清洗,(DI water cleaning),自动光学检查,(Automatic optical inspection),使贴片零件牢固焊接在,substrate,上,Stencil,Substrate,Solder paste pringting,Chip shooting,Reflow,Oven,DI water cleaning,Automatic optical inpection,Capacitor,DI water,Camera,Hot wind,Nozzle,PAD,PAD,Solder paste,Die Prepare(,芯片预处理,),To Grind the wafer to target thickness then separate to single chip,-,包括来片目检,(Wafer Incoming),贴膜,(Wafer Tape),磨片,(Back Grind),剥膜,(Detape),贴片,(Wafer Mount),切割,(Wafer Saw),等系列工序,使芯片达到工艺所要求的形状,厚度和尺寸,并经过芯片目检,(DVI),检测出所有由于芯片生产,分类或处理不当造成的废品,.,Wafer tape,Back Grind,Wafer Detape,Wafer Saw,Inline Grinding&Polish -Accretech PG300RM,Transfer,Coarse Grind,90%,Fine Grind 10%,Centrifugal Clean,Alignment&Centering,Transfer,Back Side Upward,De-taping,Mount,Key Technology,:,1.Low Thickness Variation:+/_ 1.5 Micron,2.Good Roughness:+/-0.2 Micron,3.Thin Wafer Capacity:Up to 50 Micron,4.All-In-One solution,Zero Handle Risk,2.,Grinding,相关材料,A,TAPE,麦拉,B Grinding,砂轮,C WAFER CASSETTLE,工艺对,TAPE,麦拉的要求：,1。,MOUNT,No delamination,STRONG,2。SAW,ADHESION,No die flying off,No die crack,工艺对麦拉的要求：,3。,EXPANDING,TAPE,Die distance,ELONGATION,Uniformity,4。PICKING UP,WEAK,ADHESION,No contamination,3.,Grinding,辅助设备,A Wafer Thickness Measurement,厚度测量仪,一般有接触式和非接触式光学测量仪两种；,B Wafer roughness Measurement,粗糙度测量仪,主要为光学反射式粗糙度测量方式；,4.,Grinding,配套设备,A Taping,贴膜机,B Detaping,揭膜机,C Wafer Mounter,贴膜机,Wafer Taping -Nitto DR300II,Cut Tape,Taping,Alignment,Transfer,Transfer Back,Key Technology,:,1.High Transfer Accuracy:+/_ 2 Micron,2.High Cut Accuracy:+/-0.2 mm,3.High Throughput:50 pcs wafer/Hour,4.Zero Void and Zero Wafer Broken,Detaping,l,Wafer mount,Wafer frame,晶 圓 切 割(,Dicing),Dicing,设备,:,A DISCO 6361,系列,B ACCERTECH,东京精密,AW-300T,Main Sections Introduction,Cutting Area:Spindles(Blade,Flange,Carbon Brush),Cutting Table,Axes(X,Y1,Y2,Z1,Z2,Theta),OPC,Loader Units:Spinner,Elevator,Cassette,Rotation Arm,Blade Close-View,Blade,Cutting Water,Nozzle,Cooling Water Nozzle,Die Sawing Disco 6361,Key Technology,:,1.Twin-Spindle Structure.,2.X-axis speed:up to 600 mm/s.,3.Spindle Rotary Speed:Up to,45000 RPM.,4.Cutting Speed:Up to 80mm/s.,5.Z-axis repeatability:1um.,6.Positioning Accuracy:3um.,Rear,Front,A Few Concepts,BBD(Blade Broken Detector),Cutter-set:Contact and Optical,Precision Inspection,Up-Cut and Down-Cut,Cut-in and Cut-remain,晶 圓 切 割(,Dicing),Dicing,相关工艺,A Die Chipping,芯片崩角,B Die Corrosive,芯片腐蚀,C Die Flying,芯片飞片,Wmax,Wmin,Lmax ,DDY,DY,規格,DY 0.008mmWmax 0.070mmWmin 0.8*,刀厚,Lmax 1000,4,90/1004,8,11,9011,15,IC type loop type,Capillary,Gold Wire,Gold Wire Manufacturer,(,Nippon,SUMTOMO,TANAKA.,),Gold Wire Data,(Wire Diameter,Type,EL,TS),焊线,(Wire Bond),3.Wire Bond,辅助设备,A Microscope,用于测,loop height,B Wire Pull,拉力计（,DAGE4000）,C Ball Shear,球剪切力计,D Plasma,微波/等离子清洗计,Ball Size,Ball Thickness,單位,:um,，,Mil,量測倍率,:50X,Ball Thickness,計算公式,60 um BPP 1/2 WD=50%,60 um BPP 1/2 WD=40%50%,Ball Size,Ball Size&Ball Thickness,Loop Height,單位,:um,，,Mil,量測倍率,:20X,Loop Height,線長,Wire Pull1 Lifted Bond(Rejected),2 Break at neck(Refer wire-pull spec),3 Break at wire(Refer wire-pull spec),4 Break at stitch(Refer stitch-pull spec),5 Lifted weld(Rejected),Ball Shear,單位,:gram or g/mil,Ball Shear,計算公式,Intermetallic,（,IMC,有,75%,的共晶,Shear Strength,標準為,6.0g/mil,。,SHEAR STRENGTH,Ball Shear/Area (g/mil),Ball Shear=x;Ball Size=y;Area=(y/2),x/(y/2)=z g/mil,等离子工艺,Plasma Process,气相-固相表面相互作用,Gas Phase-Solid Phase Interaction,Physical and Chemical,分子级污染物去除,Molecular Level Removal of Contaminants,30 to 300 Angstroms,可去除污染物包括,Contaminants Removed,难去除污染物包括,Difficult Contaminants,Finger Prints,Flux,Gross Contaminants,Oxides,Epoxy,Solder Mask,Organic Residue,Photoresist,Metal Salts(Nickel Hydroxide),Plasma Clean March AP1000,Key Technology,:,1.Argon Condition,No oxidation.,2.Vacuum Pump dust collector.,3.Clean Level:blob Test Angle 8 Degree.,Plasma,PCB Substrate,Die,+,+,+,+,+,+,+,+,+,+,+,+,+,Electrode,+,Ar,Well Cleaned with Plasma,80,o,8,o,Organic Contamination vs Contact Angle,Water Drop,Chip,Chip,Mold(,模塑,),To mold strip with plastic compound then protect the chip to prevent from damaged,-,塑封元件的线路，以保护元件免受外力损坏，同时加强元件的物理特性,便于使用,.,在模塑前要经过等离子清洗,(Pre-Mold Plasma Clean),以确保模塑质量,.,在模塑后要经过模塑后固化,(Post Mold Cure),以固化模塑料,.,塑封,(Molding),Molding,设备,A,TOWA YPS&Y-Series,B ASA,OMEGA 3.8,机器上指示灯的说明：,1、绿灯机器处于正常工作状态；,2、黄灯机器在自动运行过程中出现了报警提示，但机器不会立即停机；,3、红灯机器在自动运行过程中出现了故障，会立即停机，需要马上处理。,机器结构了解正面,指示灯,主机,Tablet,压机,人机界面,紧急停机按钮,机器结构了解背面,CULL BOX,用来装切下来的料饼；,OUT MG,用来装封装好的,L/F；,配电柜用来安装整个模机的电源和,PLC，,以及伺服电机的,SERVO PACK。,CULL BOX,OUT MG,配电柜,紧急停机按钮,塑封,(Molding),2.,Molding,相关材料,A Compound,塑封胶,B Mold Chase,塑封模具,模具介绍：,型腔,注塑孔,胶道,模具是由硬而脆的钢材加工而成的。所有的清洁模具的工具必须为铜制品，以免对模具表面产生损伤。严禁使用钨钢笔、,cull,等非铜材料硬质工具清洁模具。,塑封,(Molding),3.,Molding,辅助设备,A X-RAY,X,射线照射机,-,用于,Mold,后对于产品的检查,B Plasma,清洗机,-,作用原理和,WB,前的相同；,Thanks for watching and listening,The End,