韩国商务模板.pptx

#,APPENDIX,素彩网,-ppt,Chapter,1,1,-1,(,),99,00,01,02.3Q,23,515,29,565,16,008,14,802,3,017,3,591,2,092,1,878,(%),12.83,12.14,13.07,12.69,1993,5,24,30,Diffusion Furnace(,),LP-CVD(,),77,(,23,),(,36.5%),1.,2.,A/S,3.,4.,(,),(,),/,SAS,HEA,(,02.3Q,),1,-2,93,93.5.24,Furnace,CVD,93,92,DRAM,1,93,Memory,1,95%,(Oxidation),(Exposure),(Development),(Etching),(CVD),(PR),Wafer,Source Gas,Wafer,1,-3,Wafer,Wafer,(Fabrication),(Packaging),(Test),1,-4,ALD,(Atomic Layer Deposition),-Al,2,O,3,/HfO,2,-Nitride(Si,3,N,4,)-Oxide(SiO,2,),Batch Type,MMT,(Modified Magnetron Type),-Stack Gate,(Nitridation,Oxidation),Single Type,Furnace&CVD,200mm/300mm Wafer,Furnace/CVD,TAT,(Turn Around Time),Wafer,1,Single Type,RTP(Rapid Thermal Process),Ruthenium,High-k,Ta,2,O,5,Batch,50150,Wafer,Batch Type,Oxide,Nitride,Anneal,D-Poly,HTO(High Temperature Oxide),Alloy,BPSG reflow,1,-5,A/S,Total Service,200mm/300mm,Diffusion Furnace&LP-CVD,LP-OXIDATION,ALD,:63%,:9%,:15%,Set-up,A/S,:13%,(2002,3,),Chapter,2,(,:WSTS 2002.5,Data Quest 2002.7),(B$),204,149,35,62,2,-1,Furnace&CVD,01,02,03,-2003,1220%,916%,-,DRAM,PC,2003,Furnace&CVD,-,70%,-,Furnace&CVD,20%,(,:,Data Book 2001),(M$),5,243,2,675,397,755,2,-2,(,),(,),(,:,03.01,),03,IT,PC,22%,($1,422,$1,731,$309,),03,.,-300 Wafer Line,-System LSI Line,-,03,5,3.6,4,3,LCD,Utility,03,12.4%,(2001,),-,6.8%,36.1%,11.0%,1,324,163,12.3,1,261,90,7.1,2,173,219,10.1,1,097,170,15.5,781,81,10.4,(,%),02(F),01,00,99,98,(,:,),(%),(,:,2002),(M$),2,938,1,350,1,933,4,029,2,045,2,217,12.4%,17.8%,0,5,10,15,20,25,2,-3,(,),300mm Furnace&CVD,35%,17%,9%,T,39%,200mm Furnace&CVD,49%,11%,3%,T,37%,Chapter,3,Trend,R&D,3,-1,Trend,(,Maker,),(Device Maker),(,Maker),(Device Maker),(,:,+,),R&D,Device,Maker,Device Maker,(JDP:Joint Development Project),3,-2,Furnace&CVD,2002,2003,2004,2005,Design Rule(,),130,90,65,(,),Device,Gas,Plasma,S/W,Conventional Diffusion Furnace&LP-CVD,ALD,(Atomic Layer Deposition),MMT,(Modified magnetron Typed Plasma source),PL-CVD(Poly Layer,CVD),RTP,(Rapid Thermal Process),(,:,:,),3,-3,200mm LP-Oxidation,1,3,200mm MO-CVD(Ru),1,300mm Furnace&CVD,8,200mm Batch Type ALD(Si,3,N,4,),1,1,200mm/300mm,BPSG(,)FLOW,High Speed Temp.Ramp up/down,Anneal,200mm 5,300mm 7,200mm/300mm Batch Type ALD(Al,2,O,3,HfO,2,),Capacitor,200:2003.06,300:2003.12,300mm Mini Batch(Si,3,N,4,),Quick Cycle Time,2003.06,300mm ICC+Vacuum Load LockD-Poly,Poly Contact,2003.12,200mm/300mm,Batch PN,(Plasma Nitridation),High Throughput Batch Type,200:2003.06,300:2004.06,300mm Batch Type ALD(Si,3,N,4,),2003.,MMT,(Modified Magnetron Typed Plasma source),Low-Temp.Plasma,2004.,KAIST NANO FAB,NANO Technology process,2005.,10,Device Maker,R&D,2000-0019002,2000-0010461,2001-0070914,2001-0035106,2001-0070682,2001-0035105,Unit,Partner,Gas/,Unit,60%,Quartz,Heater,E,ARM,/TRANSFER ARM/TRANSFER,ROBOT ARM/BOAT CHANGER,Unit,HANBON,FLANGE/SHUTTER,DAMPER DUCT,R&D,3,-4,2000,R&D,23,(,77,30%,),-,15,5,R&D,15,(,6%),Unit,(,),(%),(,),5.0,9.3,12.5,15.0,3,-5,2001,-,1,700,-,:,-,:,1,2,500,-,:,1,3%,-,:,800,:,-,:,3,-6,A/S,.,3,(OEM),.,.1,:,2,:,A/S,3,:,Unit,OEM,5 Wafer,4 6 Wafer,8 12 Wafer,-200,-1520,80,1991 1996,1997 2001,2002 2006,72,9,9,27,27,80,10,10,30,30,(8),ASMC,TSMC,Hejian,SMIC,03,(M$),31,10,10,6,4,1,Line,3,4,5,6,8,W/F Size,Fab,:CCID(,),Chapter,4,4,-1,-02,240,50%,-,01,13.07%,(,6.4%),-,0%,-,02.3Q,(02,),24,000,(,:,),23,515,29,565,16,008,14,802,(,:%),(,:%),(,),4,-2,2001,2002,(,),PER(A)(,),13.94,27.01,(B)(,),2,092,095,1,074,178,(C)(,),6,000,000,6,000,000,EPS(B/C)(,),349,179,(A,EPS),4,865,4,835,(D+E)/2)(,),4,850,2001,2002,(,),EV/EBITDA(A),11.78,20.51,EBIDTA(B),2,597,773,1,238,616,EV(AB),30,601,766,25,404,014,(C),-4,656,597,-8,935,346,(EV-C),35,258,363,34,339,360,6,000,000,6,000,000,(EV-C)/,5,876,5,723,(D+E)/2),5,800,PER,EV/EBITDA,Band,4,850,5,800,5,325,36.96%,3,357,3,1003,700,PER,EV/EBITDA,(,),4,-3,TEL,1999,2001,12%,(,9,),Furnace&CVD,60%,M/S,Device Maker,(,10,),A/S,?,?,Zero,APPENDIX,Chapter,5,5,-1,2003,3,5,2003,2,21,2003,3,21,2003,2,5,2003,3,12,13,4,286,6,851,365,(,),2,200,(,),2,355,776,(28.7%),2,210,000,(26.9%),254,224,(3.1%),(,:8,210,000,),2,190,000,(26.7%),1,200,000,(14.6%),5,596,776,(68.2%),2,190,000,(26.7%),(*2),(*1),830,000,(10.1%),221,000,(2.7%),(*3),2,355,776,(28.7%),(,),(*1),:1,200,000,(,830,000,),(*2),:,(*3),:274,174,(1,:221,000,),2,613,224,(31.8%),5,-2,4-2,77,160.1,/20.9,(2001,),/,Diffusion Furnace,LP-CVD,3,30,1993.5.24,93.05,94.04,95.04,97.06 ISO9002,(Q10080),99.03,33,00.06,00.08,00.10,LP-Oxidation 1,00.11,02.02,03.02,242,(,),5,-3,Japan,FAB,日 ,23,(30.0%),15,(19.5%),17,(22.0%),2,(2.5%),20,(26.0%),(,77,),R&D,:,56%,