TOSHIBA晶体管命名.doc

Transistor with built-in resistance (BRT)
Transistor with built-in resistance (BRT)

1. RN means Toshiba transistor that has a built-in resistance
2. Polarity
This section shows the polarity of a product.
Products are classified into five types, as shown below, by the polarity.
o 1: NPN ( small-signal )
o 2: PNP ( small-signal )
o 4: PNP+NPN
3. 3 & 5 Package type
The kind of a package is expressed by the combination of 2, 3 and 5.
The combination are shown in the following table.
2
3
5
Package type
2
3
5
Package type
1,2,4
0
No mark
TO-92
1,2,4
4
No mark
S-MINI
1
No mark
SSM
5
No mark
SMV
F
ESM
6
No mark
SM6
FT
TESM
7
No mark
USV
MFV
VESM
JE
ESV
CT
CST3
9
No mark
US6
FS
fSM
FE
ES6
2
No mark
MINI
FS
fS6
3
No mark
USM
CT
CST6
4. Serial number
o Serial numbers that start from "A1": mixes type products
o Serial numbers that start from "01": others

S-MOS; Small-signal transistor / MOSFET (S-MOS)
Example of S-MOS; Small-signal transistor / MOSFET (S-MOS)

1. SSM stands for Toshiba Small-Signal MOSFET
2. The number of terminals
3. The kind of the devices being loaded
This section shows the kind of the devices being loaded of a product.
Products are classified into five types, as shown below, by the devices being loaded.
o K: Nch single
o J: Pch single
o N: Nch dual
o P: Pch dual
o L: Nch + Pch
o E: Nch + Pch (Load Switch)
o H: Nch + Schottky Barrier Diode
o G: Pch + Schottky Barrier Diode
4. Serial number
5. Package type
It shows the package type with the number of 2.
The combinations are shown in the following table.
2
5
Package type
3
F
S-Mini
FU
USM
FS
SSM
FE
ESM
T
TSM
TU
UFM
TE
TESM
FV
VESM
CT
CST3
4
CT
CST4
5
FU
USV
FE
ESV
TU
UFV
6
FU
US6
FE
ES6
TU
UF6
Small-signal transistor/MOSFET(S-MOS) (Multi-chip device)
Example of Small-signal transistor/MOSFET(S-MOS) (Multi-chip device)

1. HN means Toshiba multi-chip device
2. Internal connection
This section shows the internal connection of a product.
It is classified into five types by its internal circuit connection type.
o 1: Point symmetrical arrangement
o 2: Parallel arrangement
o 3: Cascade arrangement
o 4: Common use of emitter or source or base
o 7: Different types of transistors are arranged
3. The kind of the devices being loaded
This section shows the kind of the devices being loaded of a product.
Products are classified into A to S, as shown below, by the devices being loaded.
o A: PNP transistor x 2
o B: PNP transistor + NPN transistor
o C: NPN transistor x 2
o D: general SW diode
o E: transistor + diode
o G: different types of transistors
o J: P-ch MOSFET x 2
o K: N-ch MOSFET x 2
o L: P-ch MOSFET + Nch MOSFET
o S: SBD
o V: Variable Capacitance Diodes
4. Serial number
5. Package type
It shows the package type.
o JE: ESV
o JU: USV
o J: SMV
o FE: ES6, ESV
o FU: US6, USV
o F: SM6
o FS: fS6

Small-signal transistor / MOSFET(S-MOS) (EIAJ registration products)
Example of Small-signal transistor / MOSFET(S-MOS) (EIAJ registration products)

1. The value that subtracted 1 from the total number of terminals
2. S stands for Semiconductor
3. The kind of circuit
This section shows the circuit configuration of a product.
Circuit configurations are classified into from A to K by transistors being used.
o A: a transistor of high-frequency and PNP structure
o B: a transistor of low-frequency and PNP structure
o C: a transistor of high-frequency and NPN structure
o D: a transistor of low-frequency and NPN structure
o J: a P-ch field effective transistor ( FET )
o K: an N-ch field effective transistor ( FET )
4. Serial number
EIAJ registration numbers
5. Changes
The additional symbol which shows some changes.
Discrete IGBT/IEGT
Example of Discrete IGBT/IEGT

1. GT (or ST) means discrete IGBT or IEGT
2. The value of direct-current collector current : Ic [ A ]
The value is expressed in integral numbers.
3. The voltage between a collector and an emitter
The value is expressed in a symbol, and the actual value for each symbol is shown in table 1.
4. Structure / Characteristics classification
o 101 - 199: N-ch type
o 204 - 299: P-ch type
o 301 - 399: N-ch type with FRD
5. Changes
The additional symbol which shows some changes
Table 1
Symbol → Rated voltage reference chart
Symbol
Rated voltage
Symbol
Rated voltage
Symbol
Rated voltage
Symbol
Rated voltage
Symbol
Rated voltage
Z
20V
J
600V
W
1800V
MX
9000V
NY
100000V
FW
30V
K
700V
X
1900V
NX
10000V
PY
110000V
GW
40V
L
800V
Y
2000V
QX
12000V
QY
120000V
A
50V
M
900V
EX
2500V
TX
15000V
RY
130000V
B
100V
N
1000V
YK
2700V
YX
20000V
SY
140000V
QW
120V
P
1100V
FX
3000V
FY
30000V
TY
150000V
C
150V
Q
1200V
GX
4000V
GY
40000V
UY
160000V
D
200V
R
1300V
GXH
4500V
HY
50000V
VY
170000V
E
250V
S
1400V
HX
5000V
JY
60000V
WY
180000V
F
300V
T
1500V
JX
6000V
KY
70000V
XY
190000V
G
400V
U
1600V
KX
7000V
LY
80000V
YY
200000V
H
500V
V
1700V
LX
8000V
MY
90000V

If a symbol consists of two letters, and the second letter is W / X / Y, the second letter has the meaning as follows. ( Exception: YK, GXH )
· W: 1 / 10 of the first letter
In other words, this letter has the effect that makes the actual value of the first letter into 1 / 10.
· X: 10 times of the first letter
In other words, this letter has the effect that makes the actual value of the first letter into 10-times.
· Y: 100 times of the first letter
In other words, this letter has the effect that makes the actual value of the first letter into 100-times.
Power transistor/Power MOSFET module
Example of Power transistor/Power MOSFET module

1. MP means power module
2. Package type, kind of device
The following table shows the combination of package and device for each number of 2.
2
Device
Number of transistor being used
Package
40, 41
Bipolar
4
S-10
42
MOSFET
S-10M
43
Bipolar
S-12
44
MOSFET
S-12M
45
Bipolar
F-12
47
MOSFET
F-12M
63
Bipolar
6
S-12
68
MOSFET
F-12M
69
Bipolar
F-12
3. Serial number
Power transistor and power MOSFET of SMD package with many pins
Example of Power transistor and power MOSFET of SMD package with many pins

1. Package type
This section shows the package type of a product
o TPC: SOP-8 / VS-6
o TPCS: TSSPO-8
o TPCA: SOP-Advance
o TPCF: VS-8
o TPCM: TSSOP-Advance
o TPCP: PS-8
2. Number of lead terminals
3. Circuit configuration
This section shows the circuit configuration and kind of a device.
Details are shown in the following table.
3
Device
Circuit configuration
3
Device
Circuit configuration
0
MOSFET
N-ch x 1
7
Bip-Tr.
NPN x 2
1
P-ch x 1
8
PNP x 2
2
N-ch x 2
9
NPN + PNP
3
P-ch x 2
A
MOS + SBD
N-ch + SBD
4
N-ch + P-ch
B
P-ch + SBD
5
Bip-Tr.
NPN x 1
C
Bip + SBD
NPN + SBD
6
PNP x 1
D
Bip + SBD
4. Serial number
5. Changes
The additional symbol which shows some changes
6. "- H" shows that the product is of high-speed U-MOS series.
Example of Power transistor and power MOSFET taht have three terminals ( EIAJ registration products : the same as small-signal produts )

1. The value that subtracted 1 from the total number of terminals
2. S stands for semiconductor
3. Circuit
This section shows the circuit configuration of a product.
Circuit configurations are classified into from A to K by transistors being used.
o A : a transistor of high-frequency and PNP structure
o B : a transistor of low-frequency and PNP structure
o C : a transistor of high-frequency and NPN structure
o D : a transistor of low-frequency and NPN structure
o J : a P-ch field effective transistor ( FET )
o K : an N-ch field effective transistor ( FET )
4. Serial number
EIAJ registration numbers
5. Changes
The additional symbol which shows some changes.
6. Detailed classification of characteristics ( hFE, etc )