LND12N65 12A N沟道650V MOS管-骊微电子.pdf

LND12N65/LNC12N65/LNE12N65/LNF12N65 Version 1.0 2018 1 www.lonten.cc Lonten N-channel 650V, 12A Power MOSFET Description The Power MOSFET is fabricated using the advanced planer VDMOS technology. The resulting device has low conduction resistance, superior switching performance and high avalanche energy. Features Low RDS(on) Low gate charge (typ. Qg = 41.9 nC) 100% UIS tested RoHS compliant Applications Power factor correction. Switched mode power supplies. LED driver. Product Summary VDSS 650V ID 12A RDS(on),max 0.8 Qg,typ41.9 nC TO-262 TO-263 TO-220 TO-220F N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 650 V Continuous drain current ( TC = 25 C ) ( TC = 100 C ) ID 12 7.5 A A Pulsed drain current 1) IDM 48 A Gate-Source voltage VGSS 30 V Avalanche energy, single pulse 2) EAS 605 mJ Peak diode recovery dv/dt 3) dv/dt 5 V/ns Power Dissipation TO-220F ( TC = 25 C ) Derate above 25 C PD 42 0.34 W W/ C Power Dissipation TO-220 TO-262 TO-263 ( TC = 25 C ) Derate above 25 C 150 1.2 W W/ C Operating junction and storage temperature range TJ, TSTG -55 to +150 C Continuous diode forward current IS12 A Diode pulse current IS,pulse 48 A Thermal Characteristics Parameter Symbol Value Unit TO-220F TO-220TO-251TO-252 Thermal resistance, Junction-to-case RJC 2.98 0.83 C/W Thermal resistance, Junction-to-ambient RJA 110 62.5 C/W S D G Pb 现货TEL：13808858392 杜S LND12N65/LNC12N65/LNE12N65/LNF12N65 Version 1.0 2018 2 www.lonten.cc Package Marking and Ordering Information Device Device Package Marking Units/Tube Units/Real LNC12N65 TO-220 LNC12N65 50 LND12N65 TO-220F LND12N65 50 LNE12N65 TO-263 LNE12N65 50 LNF12N65 TO-262 LNF12N65 50 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA 650 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=0.25 mA 2 - 4 V Drain cut-off current IDSS VDS=650 V, VGS=0 V, Tj = 25 C Tj = 125 C - - - 1 100 A Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 100 nA Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -100 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=6A - 0.64 0.8 Dynamic characteristics Input capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz - 2000 - pF Output capacitance Coss - 164 - Reverse transfer capacitance Crss - 7.4 - Turn-on delay time td(on) VDD = 325 V, ID = 12 A RG = 10 , VGS=15 V - 14.6 - ns Rise time tr - 37.8 - Turn-off delay time td(off) - 69.3 - Fall time tf - 15.8 - Gate charge characteristics Gate to source charge Qgs VDD=520 V, ID=12 A, VGS=0 to 10 V - 10.8 - nC Gate to drain charge Qgd - 15 - Gate charge total Qg - 41.9 - Gate plateau voltage Vplateau - 5 - V Reverse diode characteristics Diode forward voltage VSD VGS=0 V, IF=12 A - - 1.5 V Reverse recovery time trr VR=325 V, IF=12 A, dIF/dt=100 A/s - 450.4 - ns Reverse recovery charge Qrr - 4.75 - C Peak reverse recovery current Irrm - 21.1 - A Notes: 1. Pulse width limited by maximum junction temperature. 2. L=10mH, IAS = 11A, Starting Tj= 25 C. 3. ISD = 12A, di/dt100A/us, VDDBVDS, Starting Tj= 25 C. LND12N65/LNC12N65/LNE12N65/LNF12N65 Version 1.0 2018 3 www.lonten.cc Electrical Characteristics Diagrams Figure 1. Typical Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperature Figure 5. Breakdown Voltage vs. Temperature Figure 6. On-Resistance vs. Temperature Tj ,Junction temperature (C) BVDSS, (Normalized) Drain-Source Breakdown Voltage VGS=0 V IDS=0.25 mA Pulse test Tj ,Junction temperature (C) RDS(on), (Normalized) Drain-Source On-Resistance VGS=10 V IDS=6 A Pulse test VDS ,Drainsource voltage (V) VGS=4.5V VGS=6V VGS=10V VGS ,Gatesource voltage (V) ID, Drain current (A) ID ,Drain current (A) RDS (on) , Drain-Source On-Resistance () Tc = 25C Pulse test VGS = 10 V IDS=0.25 mA Pulse test Tj ,Junction temperature (C) Vth , (Normalized) Gate threshold voltage ID, Drain current (A) Tc = 25C VGS=8V VGS=7V Tc = 150C VGS=9V VGS=5.5V LND12N65/LNC12N65/LNE12N65/LNF12N65 Version 1.0 2018 4 www.lonten.cc Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area TO-220F TO-220/ TO-262/TO-263 Figure 11. Power Dissipation vs. Temperature Figure 12. Power Dissipation vs. Temperature TO-220F TO-220/ TO-262/TO-263 Notes:f = 1 MHz,VGS=0 V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd QG ,Total Gate Charge (nC) VGS,Gate-Source Voltage (V) ID = 12 A Capacitance (pF) VDS ,Drain-Source Voltage (V) Ciss Coss Crss PD ,power dissipation, (W) Tc ,Case temperature (C) VDS ,Drain-Source Voltage (V) ID ,Drain current (A) Limited by RDS(on) DC 10ms 1ms 100us Notes: T c = 25C T j = 150C Single Pulse ID ,Drain current (A) VDS ,Drain-Source Voltage (V) PD ,power dissipation, (W) Tc ,Case temperature (C) Notes: T c = 25C T j = 150C Single Pulse Limited by RDS(on) DC 10ms 1ms 100us VDS=520V LND12N65/LNC12N65/LNE12N65/LNF12N65 Version 1.0 2018 5 www.lonten.cc Figure 13. Continuous Drain Current vs. Temperature Figure 14. Body Diode Transfer Characteristics Figure 15 Transient Thermal Impedance, Junction to Case, TO-220F Figure 16. Transient Thermal Impedance, Junction to Case, TO-220/ TO-262/TO-263 Duty = t/T Z JC(t)=2.98C/W Max. P DM t T In descending order D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse t ,Pulse Width (s) Z JC Normalized Transient Thermal Resistance ID ,Drain current (A) Tc ,Case temperature (C) VSD ,Source-Drain Voltage (V) ISD ,Reverse Drain Current （A） Tc = 25C Tc = 150 C Duty = t/T Z JC(t)=0.83C/W Max. P DM t T In descending order D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse t ,Pulse Width (s) Z JC Normalized Transient Thermal Resistance LND12N65/LNC12N65/LNE12N65/LNF12N65 Version 1.0 2018 6 www.lonten.cc Gate Charge Test Circuit & Waveform Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms LND12N65/LNC12N65/LNE12N65/LNF12N65 Version 1.0 2018 7 www.lonten.cc Lonten LNC12N65 ABYWW99 Mechanical Dimensions for TO-220 UNIT：mm TO-220 Part Marking Information SYMBOL MIN NOM MAX A 4 4.8 B 1.2 1.4 B1 1 1.4 b1 0.75 0.95 c 0.4 0.55 D 15 16.5 D1 5.9 6.9 E 9.9 10.7 e 2.44 2.54 2.64 F 1.1 1.4 L 12.5 14.5 L1 3 3.5 4 P 3.7 3.8 3.9 Q 2.5 3 Q1 2 2.9 Y 8.02 8.12 8.22 Lonten Logo Part Number “AB” Foundry & Assembly Code “YWW” Date Code “99” Manufacturing Code LND12N65/LNC12N65/LNE12N65/LNF12N65 Version 1.0 2018 8 www.lonten.cc Lonten LND12N65 ABYWW99 Mechanical Dimensions for TO-220F UNIT：mm SYMBOL MIN NOM MAX A 4.5 4.9 A1 2.3 2.9 b 0.65 0.9 b1 1.1 1.7 b2 1.2 1.4 c 0.35 0.65 D 14.5 16.5 D1 6.1 6.9 E 9.6 10.3 E1 6.5 7 7.5 e 2.44 2.54 2.64 L 12.5 14.3 L1 9.45 10.05 L2 15 16 L3 3.2 4.4 P 3 3.3 Q 2.5 2.9 TO-220F Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Part Number “99” Manufacturing Code LND12N65/LNC12N65/LNE12N65/LNF12N65 Version 1.0 2018 9 www.lonten.cc Mechanical Dimensions for TO-262 UNIT：mm SYMBOL MIN NOM MAX A 4.42 4.72 A1 2.40 2.80 b 0.76 0.86 b1 1.22 1.40 c 0.33 0.43 c2 1.22 1.35 D 8.99 9.29 e 2.44 2.54 2.64 e1 4.98 5.18 E 9.95 10.25 L 12.50 13.60 L1 3.30 3.50 3.80 L2 1.22 1.40 Y 8.02 8.12 8.22 TO-262 Part Marking Information Lonten Logo Part Number “AB” Foundry & Assembly Code “YWW” Date Code “99” Manufacturing Code Lonten LNF12N65 ABYWW99 LND12N65/LNC12N65/LNE12N65/LNF12N65 Version 1.0 2018 10 www.lonten.cc Lonten LNE12N65 ABYWW99 Mechanical Dimensions for TO-263 UNIT：mm SYMBOL MIN NOM MAX A 4.42 4.72 B 1.22 1.4 b 0.76 0.86 b1 1.22 1.4 b2 0.33 0.43 C 1.22 1.35 D 9.95 10.25 E 8.99 9.29 e1 2.44 2.54 2.64 e2 4.98 5.18 L1 14.7 15.1 15.5 L2 2 2.3 2.6 L3 1.5 2 K -0.1 0.1 Y 8.02 8.12 8.22 TO-263 Part Marking Information Lonten Logo Part Number “AB” Foundry & Assembly Code “YWW” Date Code “99” Manufacturing Code LND12N65/LNC12N65/LNE12N65/LNF12N65 Version 1.0 2018 11 www.lonten.cc Disclaimer The content specified herein is for the purpose of introducing LONTENs products (hereinafter Products). 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