AP25N06K 30a 60v耐压的mos管代换CS25N06C4-25N06 mos管60v参数_骊微电子.pdf

AP25N06K N-Channel Enhancement MosfetFeature60V,30ARDS（ON）29mVGS=10VTYP:24 m RDS（ON）33mVGS=4.5V TYP:28.5 m Advanced Trench TechnologyLead free product is acquiredExcellent R DS（ON）and Low Gate ChargeApplication PWM applicationsLoad SwitchPower managementPackage Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity(PCS)25N06K AP25N06K TO-252 13 inch-2500 ABSOLUTE MAXIMUM RATINGS(Ta=25 unless otherwise noted)Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Continuous Drain Current(T =25)ID 30 A Continuous Drain Current(T=100)ID 17 A IDM 80 A EAS 34 mJ Power Dissipation PD 25 W Thermal Resistance from Junction to Case RJC 5/W Junction Temperature TJ 150 Storage Temperature TSTG-55+150 Schematic Diagram Marking and pin assignment 25N06K*CCSingle Pulsed Avalanche Energy(2)Pulsed Drain Current (1)深圳市骊微电子科技有限公司铨力半导体代理商AP25N06K N-Channel Enhancement MosfetMOSFET ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise noted)Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=-250A 60-V Zero gate voltage drain current IDSS VDS=60V,VGS=0V-1 A Gate-body leakage current IGSS VGS=20V,VDS=0V-100 nA Gate threshold voltage(3)VGS(th)VDS=VGS,ID=250A 1.1 1.6 2.2 V Drain-source on-resistance(3)RDS(on)VGS=10V,ID=15A-24 29 m VGS=4.5V,ID=10A-28.5 33 Forward tranconductance(3)gFS VDS=10V,ID=15A 20-S Dynamic characteristics Input Capacitance Ciss VDS=25V,VGS=0V,f=1MHz-1090-pF Output Capacitance Coss-56-Reverse Transfer Capacitance Crss-47-Switching characteristics Turn-on delay time td(on)VDD=30V,ID=20A VGS=10V,RG=1.8-7.2-ns Turn-on rise time tr-19-Turn-off delay time td(off)-14-Turn-off fall time tf-22-Total Gate Charge Qg VDS=30V,ID=10A,VGS=10V-19.2-nC Gate-Source Charge Qgs-3.6-Gate-Drain Charge Qgd-5.1-Source-Drain Diode characteristics Diode Forward voltage(3)VDS VGS=0V,IS=15A-1.2 V Diode Forward current(4)IS-30 A Body Diode Reverse Recovery Time trr TJ=25，IF=20A,di/dt=100A/us 27 ns Body Diode Reverse Recovery Charge Qrr TJ=25，IF=20A,di/dt=100A/us 40 nc Notes:1.Repetitive Rating:pulse width limited by maximum junction temperature2.EAS Condition:TJ=25,VDD=30V,RG=25,L=0.5mH3.Pulse Test:pulse width300s,duty cycle2%4.Surface Mounted on FR4 Board,t10 sec深圳市骊微电子科技有限公司铨力半导体代理商AP25N06K N-Channel Enhancement Mosfet深圳市骊微电子科技有限公司铨力半导体代理商AP25N06K N-Channel Enhancement Mosfet Fig.1 Output CharacteristicsFig.2 Typical Transfer Characteristics Fig.3 On-resistance VS Drain CurrentFig.4 Body Diode Characteristics Fig.5 Gate Charge Characteristics Fig.6 Capacitance Characteristics Typical Performance Characteristics深圳市骊微电子科技有限公司铨力半导体代理商AP25N06K N-Channel Enhancement MosfetFig.7 Normalized Breakdown Voltage VS Junction TemperatureFig.8 Normalized On-Resistance Variation VS Junction TemperatureFig.9 Maximum Continuous Drain Current VS.Case Temperature深圳市骊微电子科技有限公司铨力半导体代理商AP25N06K N-Channel Enhancement MosfetFig.10 Safe Operating Area Fig.11 Transient Thermal Response Curve深圳市骊微电子科技有限公司铨力半导体代理商AP25N06K N-Channel Enhancement Mosfet SymbolDimensions In MillimetersDimensions In InchesMin.Max.Min.Max.A2.250 2.350 0.089 0.093 A10.050 0.150 0.002 0.006 b0.660 0.860 0.026 0.034 c0.458 0.558 0.018 0.022 D6.550 6.650 0.259 0.263 D15.234 5.434 0.207 0.215 D24.826 TYP.0.191 TYP.E6.050 6.150 0.239 0.243 e2.236 2.336 0.088 0.092 L9.820 10.220 0.388 0.404 L13.000 TYP.0.119 TYP.L21.400 1.600 0.055 0.063 L31.800 TYP.0.071 TYP.L40.700 0.900 0.028 0.036 1.150 1.250 0.045 0.049 0303h0.000 0.300 0.000 0.012 V5.399 TYP0.213 TYPTO-252 Package Information 深圳市骊微电子科技有限公司铨力半导体代理商