AP30H150KA 30V 150A N沟道MOS管-30h150场效应管_骊微电子.pdf

AP30H150KA N-Channel Enhancement MosfetFeature 30V,150ARos。N)3m QVGs=10VRos ON)6m QVGs=4.5VAdvanced Trench TechnologyLead free product is acquiedLow Gate ChargeExcellent Cdv/dt e忏ect declineApplicati。nPWM appli臼tionsLoad SwitchPower managementPackage Marking and Ordering lnformati。nDevice Marking 30H150KA Device I Device Package AP30H 150KA I T0-252 Reel Size 13 inch 剑”。1WERDATA SHEET Schematic Diagram D I材30H150KA G s Marking and pin assignment Tape width Quantity(PCS)2500 ABSOLUTE MAXIMUM RATINGS(Ta=25 unless otherwise noted Parameter Symb。lValue Unit Drain-Source Voltage Vos 30 v Gate-Source Voltage VGs 20 v Continuous Drain Current(Ta=25）lo 150 A Continuous Drain Current(Ta=100）lo 98 A Pulsed Drain Currenr loM 600 A Singel Pulsed Avalanche Energy VG剖th)Vos=V，筒，lo=250ADrain毛ource on陪sistanceVos=10V,lo=30A 叫田V田=4.5V,lo=20A Dynamic charac饱risticsInput Cspaci恼neeG国Output Capaci国nee马蛐Vos=15V,V0s=OV,f=1MHz ReveSe Transfer Capaci恒n四Cr.SWI伽hlng characteristics Tum圈。nde阳ytime 句。n)Tum-on rise time I,Vco=15V,lc=30A,Tum-o仔delaytime icic，而VGS=10V,Ro=3.30 Tum-o仔fall time 岛To饱l Gate Charge Qg Gate-Source Cha咱eQgs VDS=15V,10=30人VGS=10V Gate-Drain Charge 句ds。urc:e-Drain Diode charactariati臼Diode Forward vo陶醉。V因VGS=OV,ls=1A Diode Forward currentC4l Is N。rtes:1.Repetitive Rating:pulse width limit创by maximum junction temperatu陪2.EAS Condition:TJ=25，Vco叫5V,RG=250,L=0.5mH,IAS=30A3.Pulse Test:pul锦唰dth!i:300闷，duty cycle!i:2%4.Suface Mounted on FR4 Boa时，恒10 s民Min Type M缸Unit 30 v 1.0 A 士100nA 1.0 1.6 2.5 v 2.4 3 mQ 4.2 6 3500 500 pF 431 26 24 ns 91 39 38 9 nC 13 1.2 v 1出A 深圳市骊微电子科技有限公司铨力半导体代理商AP30H1SOKA 剑”。1WERN-Channel Enhancement MosfetTest Circuit _J_一10V VosQ伊Q 9Charge Flgure1:G副e Cha咱e Test Circuit&Wavefonn Vos 90%10%-I10%干VGs aru i i!二句归一t.一；一1,.一一一lFigure 2:Resistive Switching T回t Circuit&Waveforms 1vjl_ T斗t)BVosslSFigure 3:Unclamped Inductive Swl时，Ing Test Circuit&W町，fonnsDATA SHEET V囚深圳市骊微电子科技有限公司铨力半导体代理商AP30H1SOKA N-Channel Enhancement MosfetFigure1:Output Characteristics ID(A)10080 60 咽20 VGs=2.5V。1.0 2.0 3.0 4.0 Figure 3:0n陪sis幅nee vs.Drain Current S RDS(ON)(mC)VGS=4.5V 4 3 2 VGs=10V ID(A)0 10 20 30 40田Figura 5:Gate Charge Chaac幅ristics10 V臼(V)VDS-15V 8 ID=30A 6 4 2 0 0 8 Qg(nC)才624 32 5.0 回40 剑”。1WERDATA SHEET Figure 2:Typi四l Transfer Characteisti臼100，80 j 125 出s在今60 40 20。12 3 4 5 1000 100 10 Figure 4:Body Diode Charac恒risti臼ls(A)-?L三r 1田;2s VsD(V)6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Figure 6:Capaci恒n四ChaacteristicsC(pF)10000 主二二1比000 100 一一一一一一一10 0 C画一一”l l 5 10=r=VDS(V)15 却25 30 深圳市骊微电子科技有限公司铨力半导体代理商AP30H1SOKA N-Channel Enhancement Mosfet剑”。1WERDATA SHEET Figura 7:Nonnalized BeakdownVol国gevs.Junction Temperatu陪VBR(DSS】1.3 2 _/.,/TH 1.1 1.0 0.9 m啊。50 00 150 200 Figura 9:Maximum Safe O阴阳ting Area IDC，。，一一-,.、卡、飞、t 飞飞咱口m-墅、100 II m S（，。”口、中I re：卫Sina le阳 V因1000 00 10 0.1 0.1 10 100 Figure.Tra1sie1t Thermal lmpedan臼Junction-to-Case却lJ.C(川1101 100 tt1咛庐Figura 8:Normalized on Resis国n四vs.Junction Temperature Ros(an)2.5 1.5 ，可（2.0.o 0.5-100-50。出100 1出200Figure协：MaximumContinuous Drain Current vs.Case Temperahe180 飞 !-.Tc（150 120 四60 nu 捕。25 50 75 100 125 因才75深圳市骊微电子科技有限公司铨力半导体代理商AP30H1SOKA N-Channel Enhancement Mosfet剑”。1WERDATA SHEET T0-252 Package Information E 82 c A。、飞jJJ 口町，ULAT0-252 Reel Spectification T0-252 且II.B Dimensions Ref.Millimeters Inches Min.Typ.Max.Min.Typ.Max.A 2.10 2.50 0.083 0.098 A2。0.10。0.004 B 0.66 0.86 0.026 0.034 82 5.18 5.48 0.202 0.216 c 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 D1 5.30REF 0.209REF E 6.40 6.80 0.252。.268E1 4.63 0.182 G 4.47 4.67 0.178 0.184 H 9.50 0.700.374 0.421 L 1.09 1.2 0.归30.048 L2 1.35 1.65 0.053 0.065 V1 77V2 o 5o s T 4一Dimensions Ref.Mii町、，幅幅Inches Min.丁yp.Max.Mn.Typ.M皿w 15皿16.00 16.10。.626。.6300.634 E 1.筒1.75 1.85 0.065 0.时l90.073 F 7.40 7剧7剧目，2910.295。2锦回1.40 才团1.60 0.由5。.059队063D1 1.40 1剧1.60 0.由S0.059 0.53PO a田4.00 4.10 0.1!剖口.157口.161P1 7.90 8.00 8.10 0.311 0.315 0.319 同1剧2.00 2.10 0.075。.0790.083 AO 6.部6.90 7.00 0.270 口：n斗0.276 国10.45 悦目10.60 0.411 OA13 OA17 阳2.回2.78 2.”0.105。.1090.113 T 0.24 0.27 0.009 0.011 回0.10 0.004 饱问39.80 40.00 40.20 1.567 1.575 1回归B-B20 节一 深圳市骊微电子科技有限公司铨力半导体代理商