AP3400A N沟道 30V 5.8A MOS场效应管-mos3400规格参数_骊微电子.pdf

AP3400A N-Channel Enhancement MosfetFeature 30V,5.8ARos ON)26m QVGs=10V TYP=18 m QRos ON)32m QVGs=4.5V TYP=23 m QAdvanced Trench TechnologyLead free product is acquiredApplication Interfacing SwitchingLoad SwitchingPower managementPackage Marking and Ordering lnf1。rmati。nDevice Marking 3400 Device AP3400A Device Package s。t23-3Reel Size?inch 剑”。1WERDATA SHEET D Gs Schematic Diagram s G SOT23-3 t。p view Tape width Quantity(PCS)3000 ABSOLUTE MAXIMUM RATINGS(Ta=25unless otherwise noted)Parameter Symbol Value Unit Drain-Source Voltage Vos 30 v Gate-Source Voltage VGs 士12v Continuous Drain Current(Ta=25）lo 5.8 A Continuous Drain Current(Ta=70）lo 3.8 A Pulsed Drain Current IDM 23 A Power Dissipation Po 1.36 w Thermal Resistance from Junction to Ambient ReJA 92/W Junction Temperature TJ 150 Storage Temperature TsrG-55-+150 深圳市骊微电子科技有限公司铨力半导体代理商AP3400A 剑”。1WERN-Channel Enhancement MosfetDATA SHEET MOSFET ELECTRICAL CHARACTERISTICS(T a=25unless otherwise noted)Pa ram”r Symbol Tut Condition Min Type M缸Unit static CharacterlsU臼Drain回ur四breakdownvol闻自V(BR)DSS Vos=OV,le=250A 30 v Zero gate voltage drain凶rrentloss Vos=30V,VGs=OV A Gate-body lea阳ge current IGSS V臼E土12V汕s=OV 土100nA Gate th陪shold vol恒geC3Va町th)Vos=V，田，lo=250A0.4 1.0 1.5 v V田1OV,lo=5.8A 18 28 Drain唱。ur田on-resis恒neeCS)Ros(i叫V回=4.5V,lo=3A 23 32 mo V回2.5飞I,lo=1A 35 50 Dynamic charac”而stiesInput Capaci饱n田。腼 700 Output Capacitan佣句“Vos=15V,Vras=OV,f=1MHz 88 pF R趴,ersa T阳ns旬r Capaci恒n佣Cr.52 Swl能hlng characteristics Tum-on delay time 恼。n】12 Tum-on rise time Ir Voo=15V,lc=4A,52 Tum-o怦delaytime tdc，而V臼=4.5V,RG叫00 ns 17 Tum-o怦fall time t,10 Total Gate Cha用eQg 4.8 Gate-Source Charge Qgs VDS=15V,ID=4A.1.2 nC VGS=4.5V Gate-Drain Charge 句d 1.7 s。urea-Drain Di“e characfaristi臼Diode Forward voltage V田V四OV,ls=5.8A 1.2 v Diode Forward currentC4 Is 5.8 A Notes:1.Repetitive Ra回ng:pulse width limited by maximum junction恒mperature2.Pulse Test:pul锦widthS300间，duty cycleS2%3.Sur阳ce Mounted on FR4 Boa时，恒10sec深圳市骊微电子科技有限公司铨力半导体代理商剑”。1WERAP3400A N-Channel Enhancement MosfetDATA SHEET Test Circuit Q gQ gs10V Vc.s Charge Flgure1：“幅Cha咱e T帽tCircuit驯阳.vefonn,-90%-i-I 1叭Ltd(OIO:I:；怯t1一一代忡一切一9D%寸时，JIL1VosFigure 2:A帽lsUveSwitching Test Circuit 回曲1veformsVos BVossIAS 1J1Il_ T斗tD卡Figure 3:Unclamped Inductive Switching T幅tCircuit&Wavafonns 深圳市骊微电子科技有限公司铨力半导体代理商AP3400A N-Channel Enhancement MosfetTypi臼l Performance Characteristics 20 15 10 5 Figure1:Output Characteristics Vos(V)2 3 2.5V 4 Figure 3:0n-resistance vs.Drain CurentRos(ONJ(mO)60 50 40 Vras=2.5V 30 VGs=4.5V 20 VGs=10V 10 lo(A)0 1 2 3 4 Figure 5:Ga抽Cha-geCharacteristi臼Vras(V)5 Vos=15V 4 lo=4A 3 2 0 0 Qu(nC)2 I/3 4 5 5 5 剑”。1WERDATA SHEET Figure 2:Typical Transfer Char回cteristi臼25恒且Vos=5V 20 15 10 5。.5，。1.5 2.0 2.5 3.0 Figure 4:Body Diode Characteristics ls(A)1D3 I.,-112 五二k圃，盹 101十25飞VGs=OV-1oL 0.2 0.4 VsoM。.80.8 1.0 1.2 1.4 Figure 6:Capacitance Characteristics.C(pf)10 1c3 112 1010 5 Cm C四C幅VosV)斗。15 20 1.8 1.8 25 深圳市骊微电子科技有限公司铨力半导体代理商AP3400A N-Channel Enhancement MosfetFigure 7:Nomalized Breakdown Voltage vs.Juncti。n Temperature VBR(DBB)1.3 1.2 1.1.0 0.9 号100，叫50。_.,.,可）50 100 50 200 Figure 9:Maximum Safe Ope南ting A用alo(A)00，。岳阳It凶1by1RD崎nj0.1 售三0.01 0.01；g！pulse 0.1 k V-、户、电飞、同!NI 1 目Ss t飞II1，。1四Figure.11:Maximum Effective Transient Thermal Impedance,Junction-to-Ambient 1113 ZthM（/W)1c2 唱rf101 剑”。1WERDATA SHEET Figure 8:Normalized on Resistan饵vs.Junction Temperature Ros(on)2.5 2.0 1.5 1.0 0.5-100,50。?可）50 100 150 200 Figura 10:Maximum Continuous Drain Cun回ntvs.Ambi町、tTemperature ID(A)6 5 4 3 2 0 TA（0 25 50 75 1四125150 175 深圳市骊微电子科技有限公司铨力半导体代理商AP3400A N-Channel Enhancement Mosfet剑”。1WERDATA SHEET SOT23-3 Package lnf1。rmationemQ PPL Qu nu URU 己n川UL 且一【一间F 2 E c Unit:MM Dir1ensions In Millir1eter、5Dir1ensions In 问illir1etersSyMlool 问in问Syr1loal Min Mo.x L 2.82 3.0 0.35。.50B 1.50 1.70 巳0.10 0.20 c 0.90 1.30 b 0.35 0.55 L1 2.6日3.0F。0.15 E 1.80 2.00 飞）q）T hu？今深圳市骊微电子科技有限公司铨力半导体代理商