APG022N06G 60v低压mos管-022N06G场效应管参数_骊微电子.pdf

APG022N06G NChannel Enhancement Mosfet Feature 60V,150ARos coN)2.3m OVGs=1 OVYP:1.9m0)Ros【ON)3.5m OVGs=4.5V(TYP:3.0m o)SplitGate Ten chTechnologyLead free p。duct is a饲uiredExcellent Ros coN)and Low Gate Cha咱eApplication PWMapp li回tionsL。ad Switch Power managementPackage Marking and Ordering Information Devi四MarkingG022N06G Device I Device Package APG022N06G I PDFN5浦Reel Size 剑”。1WERDATA SHEET D D D D r飞JS S S G D D D D G S S S PDFN5X6 Tape width Quantity(PCS)5000 ABS。LUTE MAXIMUM RATINGS(Ta=25C unless otherwise noted)Para me恒rSymbol Value Unit Dain-SourceVoltage Vos 60 v Ga临SourceVol恒geVos 土20v Continuous Drain Currenta25）lo 150 A Conti nu。usD阳inCurrenta=100）lo 100 A Pulsed D阳in Current IDM 450 A Single Pulsed Avalanche Ene咱y(2)EAS 520 mJ Power Dissipation Po 140 w Thermal Resistan臼from Junction to case ReJ巳0.89/W Thermal Resis恼阴fromJunction to Ambient R血JA45 IW Junction Temperature TJ 150 Sto阳geTem阳阳tureTern-55-+150 深圳市骊微电子科技有限公司铨力半导体代理商APG022N06G 剑”。1WERN-Channel Enhancement MosfetDATA SHEET MOSFET ELECTRICAL CHARACTERISTICS(T a=25unless otherwise noted)Parameter Symbol Tut Condition static CharacterlsU臼Drain回ur四breakdownvol闻自V(BR)DSS Vos=OV,le=250A Zero gate voltage drain凶rrentloss Vos=60V,VGs=OV Gate-body lea阳ge current IGSS VGS土20V,V臼OVGate th陪sholdvol闻e(3)Va町th)Vcs=V，田，lc=250AV回10V,lo=20A Drain-soun泪。n-resis恒neeCS Ros(on)VGS=4.5飞lo=10AForwar回ThresholdVoltage gra Vos=5V,lo=20A Dynam比甜anu:1811描画Input capaci饱n佣。”。utput Capacitance C惆Vos=25V,VGs=OV,f=100KHz Reverse Trans旬r capacitance G回Switching characteristics Tum-on delay time id(on)Tum-on ri锦timetr Voo=30V,lc=25A,Tum-off delay time fdc，响V臼10V,Ro=2Q Tum-off fall time t,Total Gate ChageQg Ga恒Source Cha咱Qgs VDS=30V,ID=25A,VGS=10V Ga恒Drain Cha咱8句dReverse Recovery Chrage Qrr IF=20A刷dt=100AfusR脚erse Recovery Time Trr IF=20A,di/dt=1 OOA!us s。urc揭Drain Diode characteristics Diode Forward voltage Vsc VGS=OV,ls=10A Diode Forward current1例Is No幅s:1.Repetitive Rating:pulse width limi幅d by maximum junction悟mpe阳阳陪2.EAS Condition:TJ=25，Voo=48V,RG=25 0,L=0.5Mh3.Pulse Test:pulse width300s,duty cycle边%4.Suface M。unted on FR4 Boa时，恒10 s臼Min Type M缸Unit 60 v A 土100nA 1.5 2.0 3.0 v 1.9 2.3 mo 3.0 3.5 mo 75 s 6052 1470 pF 185 8 15 ns 55 25 110 20 nC 21 100 nC 72 ns 1.2 v 150 A 深圳市骊微电子科技有限公司铨力半导体代理商APG022N06G 剑”。1WERN-Channel Enhancement MosfetDATA SHEET Te,s.t Circu盹且Waveo:rr，冒iG ate C harg1e Test CircL.1 it&Wavef口rmVgs C!ii10Vl,g.n.Ch由咱唱R.esistiv,e S恻tchililgestCir cu it.&wav efomsRl Vds VC!I军L立lVgs1Undamped lndllilctive Switching(UIS)Test Circuit&Waveforms Vd:s:E.oA 112BVss Vds R,g V，斗!diVgsJL Diode R,ecovev，est Cii，curt&Wavefomso,.=f lot ls,d Vdd 深圳市骊微电子科技有限公司铨力半导体代理商APG022N06G N-Channel Enhancement Mosfet剑”。1WERTypical Performance Characteristics DATA SHEET Fig.1 Power Dissipation Derating Curve 120 I+-1-!-+-+-+【；：；专1+只：；言!+；队斗；!+-!-+J J；：“；：飞Fig.3 Typical Output Characteristics 2 3 VDS,Drain to Source Voltage(V)Fig.5 Typical Transfer Characteristics P3 h：2av？f山，吁吁T山川才放俨仁JIJt，3ad叩而Jh川d叫山句，们户户引u叫f川Aaa，FUJJeva、eA，TTu Eh句，曲J？?nununununununu nu区dnuzdnuzanu4332211（dZZ曲3c20o丁；：；：；VGS,Gate to Source Voltage(V)Fig.2 Avalanche Energy Derating Curve vs.unction Temperature 120 I-+-+-+-+二才；n 1+：丁、1飞；jj=l+I20 I+-+-1-入J-+；：；Fig.4 Transconductance vs.Drain Current 200 4 eo 30 60 90 120 150 ID,Drain Current(A)Fig.6 State Resistance vs.Drain Current-25(m“帽J勘们VVV川叮JJ阳3456uuLieprLlha伊BOSSSSS中中唰汀hu飞。GG一二erHUUHHUUuu一M牛牛二fcfhd，TA？而A，“，AOAF斗，A叩内。，HHHUHHUPHH一h4川山川叫川叫叫叫呵，叫山山T仆仆仆仆VHC？二二nuauRMA（EZ。）曲UESE曲曲whc。，一.z 2 T、叮f.。？1(/J.，咿筐。1-.-.-.-.-.-.；.;.;.；.，.；.20 40 60 80 100 ID,Drain Current(A)深圳市骊微电子科技有限公司铨力半导体代理商IIIP。1WERAPG022N06G N-Channel Enhancement MosfetDATA SHEET Fig.8 State Resistance vs.Drain Current 125(100 P民10E.E l：；二：；.；半.：；二：t:r=12s：1 i.，且，：.：牛。扣，叮士，-.,:,I.；iiJ 8十；.GS-J J.;:I、，？.号.？l中！.，.，I二 f一一一Gs啕 V三呵芒二才c f.,.,.,.,.什帽6斗”曾士.年？斗伞荡f:;:.:VGS=5 V:f:i:t：二！二二哥UJ I 呵：叫 44：土：VGS二6V!:cL:？仨q7:VGs与川/.,._.-.一.4 叫。i丰.；.:.土：；：.:;-!合号合斗。卡.,.，.,.,.I 白c:t-1-0 0 20 40 60 80 ID.Drain Current(A)Fig.7 State Resistance vs.Drain Current 25(100 nu（EZ。）OUZSE的。但Z。z。owhnu，一1；olt叮AJi叶，丁BimCIvi，n iE4札二V4e丁J川马吨h 哑FL fi十SEiLi十四翻一一，一nua，Aa llullll尸IUWLnu，JJil叫444aCVL二c 5到骂了一bfuiiri却句hhh一，io句，nueuaUA吨句，nuFig.10 Dynamic Input Characteristics EMS。U曲3。呐。“2帽。的。Fig.9 Typical Capacitance vs.Drain Source v。ltage:Ta=25 f 1Mhz l v.,.(111 10 L一一一一0 10 20 30 40 50 60 V05,Drain-SourceVoltage VJ 10000 nu A uha响ug帽】ZU而a而U马u100十c，目Fig.12 Gate Threshold Voltage vs.Junction Temperature Fig.11 Breakdown Voltage vs.Junction Temperature 3，俨.,.俨、，r叫.i,_ 圃、._.,_，；.，i-1 斗f斗：卜斗f：2.l.：十一；一，：.:.l.A一f:，：，斗一斗，：,:,105=2SOuA？r.：.:V05=10V:1.俨if于i!.才0号f-1卜：l-t斗f:俨.电，、俨？、1俨、吨，0-25 0 25 so 75 100 125 150 Tj,Junction Temperature rCJ】国帽zou。30响。“。呐。AUEJI，吨t吓j14斗，1EJtJ，吨，斗，t14，4吨，吨，Jtdt斗J，中gJtvEVt本一，1斗，丁寸寸寸二十？一工斗士立山咱UL卢uuuu一一oet斗士斗m川A4fJeeITt？中一“U叫J4山山：OVLLFFJCLLnLJZtLLF5JJr m7，寸7p、，川J，山斗，一p十土4IA；Jfll山，十pmfhk二工艺工二十f二mu ，nJJJ斗14斗斗斗JJJJJ寸寸寸寸寸JJ士aa4工可由于士l千EMT十JJI，十44十？u工叩二二1工二。户？厂rruts卜尸rhLtl厂仁Emm却【】誓旦。CEO豆Z崎AU响的。深圳市骊微电子科技有限公司铨力半导体代理商AIIP。1WERDATA SHEET APG022N06G N-Channel Enhancement MosfetFig.14 Maximum Drain Curentvs.Case Temperature Fig.13 On-Resistance Variation vs.Junction Temperature-r-r-,.-y-I I)!，L L l e，L.1.J、卜；午，140 I I-r-r-11 1-T-r-r-,.,、咱F、，-.,.-、，.、，I I I I I I”I I I I I I.t I I I I I I O I 0,I I I I I I I.I o I I I I I I I I O I”I O I I,I O+IO I I：广；：1-:-:r：，丁斗击氛？；：；：；：（：102 106 h”“104 102 啊，Square Wave Pusle Duration(Sec)10 深圳市骊微电子科技有限公司铨力半导体代理商APG022N06G N-Channel Enhancement Mosfet剑”。1WERPDFN5X6 DATA SHEET Package lnformati。nm川川阳一I h-厂一一0一PDFN5X6 s COMMON MM INCH。MIN.MAX.MIN.MAX.L A 1.03 1.17 0.0406 0.0461 b 0.34 0.48 0.0134 0.0189 c 0.824 0.970 0.0324 0.0382 D 4.80 5.40 0.1890 0.2126。14.11 4.31 0.1618 0.1697 DZ 4.80 5.00 0.1890 0.1969 E 5.95 6.15 0.2343 0.2421 El 5.65 5.85 0.22240.2303 E2 1.60 0.0630 e 1.27 BSC 0.05 BSC L 0.05 0.25 0.0020 0.0098 Ll 0.38 0.50 0.0150 0.0197 L2 0.38 0.50 0.0150 0.0197 H 3.30 3.50 0.1299 0.13 780.18 0.0070 深圳市骊微电子科技有限公司铨力半导体代理商