1、Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Dev
2、icesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices BJT（Bipolar Junction Transistors）是一种最重要的分立固体是一种最重要的分立固体器件，也是绝大多数半导器件，也是绝大多数半导体有源器件和集成电路的体有源器件和集成电路的基础器件。基础器件。Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction Transisto
3、rsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices基本结构基本结构 Basic Structures晶体管由两个晶体管由两个
4、pn 结：发射结：发射结和集电结，将晶体管划结和集电结，将晶体管划分为三个区：发射区、基分为三个区：发射区、基区及集电区。区及集电区。Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsF
5、undamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices相应的三个电极称为发射相应的三个电极称为发射极、基极和集电极，常用极、基极和集电极，常用 E，B 和和 C (或或 e，b 和和 c )表示。表示。BJT 有两种基本结构类型有两种基本结构类型 pnp 管和管和 npn 管管Chapter 2 Basic Properties of Bipolar Junctio
6、n TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFunda
7、mental of Semiconductor DevicesPNP基基 区区发射区发射区集电区集电区E发射极发射极C集电极集电极B基基 极极发射结发射结集电结集电结Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junct
8、ion TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesB基基 极极C集电极集电极E发射极发射极PNP 晶体管的图示和电路符号晶体管的图示和电路符号Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar
9、 Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesNPN基基 区区发射区发射区集电区集电
10、区E发射极发射极C集电极集电极B基基 极极发射结发射结集电结集电结Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor Device
11、sFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesB基基 极极C集电极集电极E发射极发射极NPN 晶体管的图示和电路符号晶体管的图示和电路符号Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of
12、 Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 B
13、asic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor
14、DevicesChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconduc
15、tor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices晶体管的制造工艺大体上晶体管的制造工艺大体上分为获得均匀基区杂质分分为获得均匀基区杂质分布和不均匀基区杂质分布布和不均匀基区杂质分布两类。两类。Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of
16、 Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices前者的典型例子是合金结前者的典型例子是合金结晶体管，结构示意如图晶体管，结构示意如图Chapter 2 Basic Properties
17、of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semicond
18、uctor DevicesFundamental of Semiconductor Devices掺掺 Sb 的的 n 型型 GeIn 球球In 球球p 型型 In 和和 Ge 合金合金集电区集电区p 型型 In 和和 Ge 合金合金发射区发射区n 型基区型基区Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction Transi
19、storsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices后者的典型例子是平面扩后者的典型例子是平面扩散结晶体管，结构示意如散结晶体管，结构示意如图图Chapter 2 Basic Properties of Bipolar Junction
20、TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundame
21、ntal of Semiconductor Devices双极型双极型 NPN 晶体管的纵向结构晶体管的纵向结构N+型型 Si 衬底衬底N-型型 Si 外延层外延层P 型型 基区基区N+型型 发射区发射区SiO2基极基极基极基极发射极发射极集电极集电极Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction Transistors
22、Chapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices发射发射极极基极基极双极型双极型 NPN 晶体管的横向版图晶体管的横向版图Chapter 2 Basic Properties of Bipolar Junction TransistorsCha
23、pter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semico
24、nductor Devices双极型双极型 NPN 晶体管晶体管制造过程制造过程1 1、在、在 N +型衬底上外延型衬底上外延 N 层层2 2、在、在 N 外延层中扩散外延层中扩散 P 型杂质型杂质3 3、在、在 P 型扩散区中再扩散型扩散区中再扩散 N+型杂质型杂质4 4、在磷氧化层上开出基区和发、在磷氧化层上开出基区和发 射区接触孔射区接触孔Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2
25、Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices5 5、蒸发金属、蒸发金属6 6、光刻金属，引出及区、发射、光刻金属，引出及区、发射 区引线区引线7
26、 7、切片、封装、切片、封装Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Sem
27、iconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesP 型衬底型衬底N+埋层埋层N+埋层埋层N 外延层外延层N-外延层外延层集电区集电区集电区集电区P+隔隔离离区区P+隔隔离离区区P+隔隔离离区区P 型型 基区基区P 型型 基区基区N+发射区发射区N+发射区发射区集成晶体管结构示意图集成晶体管结构示意图Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties
28、 of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devicespn 结隔离结隔
29、离集成双极晶体管集成双极晶体管（ICBJT）工艺工艺 p 型衬底开始型衬底开始n+隐埋层注入隐埋层注入生长外延层生长外延层 p+隔离扩散隔离扩散p 型基区扩散型基区扩散Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junc
30、tion TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devicesn+发射区扩散发射区扩散接触孔腐蚀接触孔腐蚀金属淀积及腐蚀金属淀积及腐蚀钝化和开启键合窗孔钝化和开启键合窗孔Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties o
31、f Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices晶晶体体管管正正常常
32、工工作作时时，发发射射结结正正偏偏，集电结反偏，其能带如下图集电结反偏，其能带如下图UCECEVUBXCXBn p n p Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundam
33、ental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices晶体管内部载流子传输及晶体管内部载流子传输及电流放大系数电流放大系数Transistor internal carriers transferring and the current amplify factorsChapter 2 Basic Properties of Bipolar Junction Transist
34、orsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of
35、Semiconductor Devices发射区发射区基基 区区集电区集电区2JpE31JnE45JnCJnE-JnCJpBJnSC6JpSCJpC0JnC07晶体管内部裁流子传输过程示意：JEJCJBChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Propertie
36、s of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices发射结处于正偏，大量电发射结处于正偏，大量电子从发射区注入到基区，子从发射区注入到基区，同时也有空穴从基区注入同时也有空穴从基区注入到发射区。其中，一部分到发射区。其中，一部分电子流与空穴流复合，如电子流与空穴流复合，如 图中图中 2、3 。Ch
37、apter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devic
38、esFundamental of Semiconductor DevicesFundamental of Semiconductor Devices基区大部分注入电子凭扩基区大部分注入电子凭扩散及漂移运动到达集电结散及漂移运动到达集电结边界，被反偏集电结强电边界，被反偏集电结强电场扫入集电区，从集电极场扫入集电区，从集电极流出，即图中流出，即图中 1 所示。所示。Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsC
39、hapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices基区中注入的电子流一部基区中注入的电子流一部分将与基区中的空穴复合分将与基区中的空
40、穴复合如图中如图中 4、5 所示。所示。集电结势垒区产生的电子集电结势垒区产生的电子-空穴对形成集电极反向饱空穴对形成集电极反向饱和电流，如和电流，如 6、7 所示。所示。Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Ju
41、nction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices由发射区注入并到达集电由发射区注入并到达集电区的电子电流区的电子电流 1 对放大作对放大作用有贡献，我们希望这部用有贡献，我们希望这部分电流尽可能大，其它分分电流尽可能大，其它分量尽可能小。量尽可能小。Chapter 2 Basic Properties of Bipolar
42、 Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devi
43、cesFundamental of Semiconductor Devices实实际际电电路路中中晶晶体体管管有有三三种种连接法：连接法：共基共基(Common Base Configuration)共射共射(Common Emitter Configuration)共共 集集(Common Collector Configuration)Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Bas
44、ic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesUBIBEBICIEnpnUBUCRLRECE B C共基极共基极Chapter 2 Basic Prop
45、erties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of S
46、emiconductor DevicesFundamental of Semiconductor DevicesBUBIBCBEICUCRLREIECEnpn共发射极共发射极Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar J
47、unction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesECBIBUBUCRLREIEICnpnEBC共集电极共集电极Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction T
48、ransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices设设晶晶体体管管处处于于线线性性放放大大区区，三三种种接接法
49、法，发发射射结结均均为为正正偏，集电结均为反偏。偏，集电结均为反偏。Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic Properties of Bipolar Junction TransistorsFundamental of Semiconductor Devic
50、esFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesFundamental of Semiconductor Devices电电子子线线路路中中最最常常用用的的是是共共射射极极接接法法，它它具具有有较较高高的的电电流流放放大大倍倍数数和和功功率率放放大大倍倍数数；共共集集电电极极接接法法用用得得较较少少；共共基基接接法法物物理理上上意意义直观。义直观。Chapter 2 Basic Properties of Bipolar Junction TransistorsChapter 2 Basic P
浙ICP备2021020529号-1 | 浙B2-20240490 
