AP2335 场效应管(MOSFET) SOT-23 丝印2335 P沟道 20V7A_骊微电子.pdf

AP2335 P-Channel Enhancement MosfetFeature-20V,-7ARos ON)25m QVGs=-4.SV TYP:19 m QRos ON)35m QVGs=-2.SV TYP:26 m QAdvanced Trench TechnologyLead free product is acquiredApplication Interfacing SwitchingLoad SwitchingPower managementPackage Marking and Ordering lnf1。rmati。nDevice Marking 2335 Device AP2335 Device Package s。t-23-3Reel Size?inch 剑”。1WERDATA SHEET G Schematic Diagram s G SOT-23-3 t。p view Tape width Quantity(PCS)3000 ABSOLUTE MAXIMUM RATINGS(Ta=25unless otherwise noted)Parameter Symbol Value Unit Drain-Source Voltage Vos-20v Gate-Source Voltage VGs 士12v Continuous Drain Current(Ta=25）lo-7A Continuous Drain Current(Ta=70）lo-4.6A Pulsed Drain Current IDM-28A Power Dissipation Po 2.0 w Thermal Resistance from Junction to Ambient ReJA 62.5/W Junction Temperature TJ 150 Storage Temperature TsrG-55-+150 深圳市骊微电子科技有限公司铨力半导体AP233S 剑”。1WERP-Channel Enhancement Mosfet DATA SHEET MOSFET ELECTRICAL CHARACTERISTICS(T a=25unless otherwise noted)Pa ram”r static CharacterlsU臼Drain回ur四breakdownvol闻自Zero gate voltage drain凶rrentGate-body lea阳ge current Gate th陪shold vol恒geC3Drain唱。ur田on-resis恒neeCS Dynamic charac饱risticsInput Capaci恒n四Output Capacitance Reverse T阳nsfer Capacitance Swl伽hlng characteristics Tum-on delay回meTum-on rise time Tum-o怦delaytime Tum-o怦fall time Total Gate ChageGate-Source Charge Gate-Drain Charge s。u回Drain Diode charactariati臼Diode Forward voltageC3l Diode Forward currentC4 N。rtes:Symbol V(BR)DSS loss IGSS Va町th)Ros(cn】。圄Q幽G回fdcon)1r tel（，而t,Qg Qgs 句dV田Is Tut Condition V臼OV,le=-2501JA Vos=-20V,VGs=OV V臼E土12V汕s=OVVos=V，田，lc=-250AV田=-4.5V,lo毛AV回2.5V,lo=-3A Vos=-10V,Vas=OV,f=1MHz Voc=-10V,lo=-7.0A,VGS=-4.5V,RG=2.50 VDS=-10V,ID=-3A.VGS=-4.5V V田OV,ls=-7A 1.Repetitive Rating:pulse width limited by maximum junction temperature2.Pul锦Test:pul锦width:S300间，duty cycle:S2%3.Sur阳ce Mounted on FR4 Boa叫，但10secMin Type M缸Unit-20v A 土100nA-0.3-0.7-1.0v 19 25mo 26 35 2000 242 pF 231 10 31 ns 28 8 15.3 2.2 nC 4.4 -1.2v-7.0A 深圳市骊微电子科技有限公司铨力半导体AP233S 剑”。1WERP-Channel Enhancement Mosfet DATA SHEET Test Circuit Gate Charge Test Circuit&Waveform Vgs ChageResistive Switching Test Circuit&Waveforms RL Vds Vgsl.r 10%Vds Unclamped Inductive Switching(UIS)Test Circuit&Waveforms EAA=112 u：Vds Id Vds 江JVgsl.司川ARDiode Recovery Test Circuit&Waveforms Vds Q!T=:f阳Vds-lsdVdd 深圳市骊微电子科技有限公司铨力半导体AP233S P-Channel Enhancement Mosfet Typical Performance Characteristics Figure1:Output Characteristics 15 10 1.5V 2 3 4 Figure 3:0n-resis恒nee vs.Drain Cur用nta2 RDS(ON)(mO)28 24 20 16 12、8 VGs=-2.5VVGs=-4.SV ID(A)0 2 4 8 8 10 Figure 5:Gate Chage Characteristics-VGS(V)Vos=-10V 4 lo=-3A v 3 2 Qg(nC)。3 6 9 12 15 5 12 18 剑”。1WERDATA SHEET Figure 2:Typical Transfer Characteristics ID(A)2520 15 10 5。0.5 才.01.5 Figure 4:Body Diode Characteristics-ls(A)10 I/TJ叫50 17 TJ=-25 TJ=-50:I/I 0.1 Vso(V)2.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Figure 6:Capaci恒nee Characteisti臼.c(p町，。每I_103 12 101 0、C国岛帽Crsa-Vos(V)3 8 9 12 15 18 深圳市骊微电子科技有限公司铨力半导体AP233S P-Channel Enhancement Mosfet Figure 7:Normalized B陪akdown Vol幅gevs.Junction Temperature VBR(O回11.3 1.2 1.1 1.0 0.9 。-100-50.,-,-J”。-可50 00 150 200 Figure 9:Maximum Safe Operating A回-lo(A)100)10 I/k Limited by RoS(on)F二=TA-25一Slngla pul眉0.10.1 Figue怀、？、飞、l飞、飞I,。”二、飞、飞、一卜一、10口”、咱mae一、l、-VI田N.气、DC 10 T18nal Impedance,Junction-to-Ambient ZthJ-A 川1D2 10 v-I-0.5100 C=0.2 问飞、tl=D.1 自v 卜，I-D=D.05-D.02 1 D=D.01”。t回回昌Ing阳阻腼a.Duty fai:ior D明/t2p(s1 11 rt.PeakT.F司因ZNA+TA104 o 10 12 11 10日101 1D2 剑”。1WERDATA SHEET Figure 8:Normalized on Resis恒nee vs.Junction Temperature 阳s(on)2.5 2.0 1.5 1.0 1-1-。.5-100-50。I/Ti(50 100 150 200 Figure 10:Maximum Continuous Drain Curentvs.Ambient Temperature-lo(A)7.5 6 ,4.5 3 1.5 飞飞飞？TA t 0 0 25 50 75 100 125 150 深圳市骊微电子科技有限公司铨力半导体AP233S P-Channel Enhancement Mosfet SOT-23-3 Package Information D e1 仁BAS 区3日1(c口址、lTl-1PLATI盹SECTION B-B 剑”。1WERDATA SHEET!SYMBOLMILLIMETER MIN NOM MAX A 1.25 A1。.040.10 A2.1.00 1.10 1.20 A3 0.55 0.65 0.75 b 0.38。.48b1 0.37 0.40 口.43c 0.11 0.21 c1 0.10 0.13 0.16 D 2.72 2.92 3.12 E 2.60 2.80 3.00 E1 1.40 1.60 1.80 e 0.95BSC e1 1.90BSC L0.30 0.60 。深圳市骊微电子科技有限公司铨力半导体