AP3908GD n+p沟道mos管丝印3908G-bldc mos管_骊微电子.pdf

AP3908GD N and P-Channel Enhancement Mosfet Feature N-ChannelVoo=30V,lo=36ARos cON)13m QVGs=10VRos cON)19m QVGs=4.5VP-ChannelVoo=-30V,lo=-25ARos cON)23m QVGs=-10VRos cON)34m QVGs=-4.5VLead free product is acquiredHigh power and current handing capabilitySurface mount packageApplicati。nPWM applicationsLoad SwitchPower managementPackage Marking and Ordering Inf，。rmati。nDevice Marking 3908GD Device AP3908GD Device Package PDFN5X6 Reel Size 13 inch l11 p。WERDATA SHEET 中JSchematic diagram-,.N叫DO O O A以xx3908GD NN 的。的。Marking and pin assignment PIN1 Top View Tape width B。tt。m View Quantity(PCS)5000 ABSOLUTE MAXIMUM RATINGS(Ta=25unless。therwise noted)Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Ta=25）Continuous Drain Current(Ta=100）Pulsed Drain Currenr 1l Power Dissipation Thermal Resistance from Junction to Case Junction Temperature Storage Temperature Symbol Vos VGs lo lo loM Po Rruc TJ Tsrn N-ChannelP-ChannelUnit 30-30v 2020v 36-25A 22.8-18.2A 90-70A 32 w 3.85/W 150 -55150 深圳市骊微电子科技有限公司铨力半导体代理剑”。1WERAP3908GD N and P-Channel Enhancement Mosfet DATA SHEET Test Circuit。9 O.s10V VGS Charge Flgure1:Gate Cha咱eT1回t Clrcu民W旨1vefonn90%寸.：la(ol唱I I l怜 t1-+j l唾一t.,ff一一一叫90%-LIlt VosVos Figura 2:R幅lstlva Switching Teat Circuit&Wavefonns BVossIAS 1J丑付土趴下Figure 3:Unclampad Inductive Switching Test Circuit&Waveforms 深圳市骊微电子科技有限公司铨力半导体代理AP3908GD 剑”。1WERN and P-Channel Enhancement Mosfet DATA SHEET Gate Charge Test Circuit&Waveform Vgs Charge Res1st1ve Switching Test Circuit&Waveforms RL Vds 二儿羊lVgsl.r 10%Vds Unclamped Inductive Switching（IS)Test Circuit&Waveforms EAII=112 u！Vds Id Vds -I A民VgslJ Diode Recovery Test Circuit&Waveforms Q,.:J附-lsdVdd Vdd 深圳市骊微电子科技有限公司铨力半导体代理AP3908GD N and P-Channel Enhancement Mosfet 剑”。1WERDATA SHEET Figure：Output Characteristics，。3V 34 5 Figura 3:0n阻sis恒n四vs.Drain CurentR口S(ON)(mO)281 241 8 Vas4.5V 一一VGS斗W-le(A)明82214E 4 0 0 2 4 8 8 10 Figura 5:Gate Charge Characteristics-VGS(V)10 12 8 V四15V lo=-9.1A Qg(nC)6 4 2。8 12 18 24 30 Figu阻止TypicalTransfer Chaacteristi臼-lo(A5040 30 20 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 4:B。dy Diode Charac阳istics-ls(A)10 1 7 7y，T150 T.F-25 lll L二50r.Vso(V)0.1 0.0 0.2 0.4 0.8 0.8 1.0 1.2 1AFigure 6:Capaci恒nee Characteristi臼C(pF)c3 Giia C蛐矗Crwa-VI时(V)12 才d0 10 15 20 25 30 5 深圳市骊微电子科技有限公司铨力半导体代理AP3908GD N and P-Channel Enhancement Mosfet Figure 7:Nonnalized Br田kdownVd间归回Junction Tempe咱阳陪VB同晦仰.3 1.2 ”1.1 _,.”1.0。.9nL 可）100 妇。由100 150 200 Figura9:M缸imum Safe Operati咱h回-1时剧 10 0 .-飞、1 Llni刨by阳剧团）0.1 0.1一土lI lJ11 U Flgu陌、i、OIJB 飞、飞卜1!_11111 飞咀B 咽jLIIJi 10 100 Them旧l lmpedan臼，Junctiol-阳1bientZlhJ.叫IM/)1a2E主E101 E 酷暑一=杠1cP 11 飞r、I L忡铲飞、-l=cc i旦一?1 卜b唱.05也.02回回IIPI,幽阳DL均值埠，b咐血211rL fi(s 11 F咕T何防问fi104 103 1俨1011C 101 1D2 剑”。1WERDATA SHEET Figure 8:NW回lized on RBI:由国n臼vs.Junctioo Tempe帽阳帽R固（on)(rnl)2.5 2.、I v0.-100-50。I/可（目100 150 2(”Figure 10:Maximum臼ntims DrainJrrent vs.C幽eTerr阴阳ture”电Fl2。飞卜8 6 4 2。Tc（。25 国75 100 125 1回深圳市骊微电子科技有限公司铨力半导体代理剑”。1WERAP3908GD N and P-Channel Enhancement Mosfet DATA SHEET PDFN5X68L Package Infomation5 6 7 B-11-004月ff.)c 一lM mb。灭的Omm芝市面2飞1四自MiLUMETERS D.IM.MIN.NOM.MAX.A 0.90 1.00 1.10 b 0.33 0.41 0.51 c 0.20 0.25 0.30 D1 4.80 4.90 5.00 02 3.61 3.81 3.9.6 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E23.38 3.58 3.78 回1.27 BSC H 0.41 0.51 0.61 K 1.10 L 0.51 0.61 0.71 L1 0.06 0.13 0.20 M 0.50 缸r 12 D 深圳市骊微电子科技有限公司铨力半导体代理