光敏二极管芯片制作流程.ppt

C&I3N2B AUK-D FABFAB部工程技术部工程技术OPTOOPTO产品介绍产品介绍 C&I3N2B AUK-D FABFAB部工程技术部工程技术OPTOOPTO产品是什么？产品是什么？OPTO产品指的是车间生产的光敏二极管和光敏三极管，从命名上可以看出这种产品对光是非常敏感的，产品结构及制造工艺与普通的晶体管也有一定的区别，故电特性也是有其独特的地方。光敏二光敏二极极管：管：英文为PHOTO DIODE，简称为PDI，它是在反向电压作用下工作的,没有光照时,反向电流极其微弱,叫暗电流;有光照时,反向电流迅速增大到 几十微安,称为光电流.光的强度越大,反向电流也越大.光的变化引起光电二极管电流变化,这就可以把光信号转换成电信号,成为光电传感器件。光敏三光敏三极极管：管：英文为PHOTO TRANSISTOR，简称为PTR，它和普通三极管相似，也有电流放大作用，只是它的集电极电流不只是受基极电路和电流控制，同时也受光辐射的控制。C&I3N2B AUK-D FABFAB部工程技术部工程技术PDIPDI产品产品PROCESSPROCESS（1 1）PROCESS PROCESS PDP01(PBF)PDP01(PBF)STEPSTEPAUK-D CONDITION/RECIPESPEC.1ST OXIDATION1ST OXIDATION(R)1050 3(O2)+70(STEM)+1(O2)18TUBE/#109TOX=58006800 P+PEPP+PEPTIME:480(BOE 7:1)PLAPBF COATINGPBF COATING3M-31CP COATINGPBF COATER/#09T=38004200P+DIFFUSIONP+DIFFUSION(R)1000 78(N2/LO2=3/0.15)23 TUBE/#720RS=1521/LTOLTO770 15(N2/WO2=0.5/3)24 TUBE/#123P+P+DRIVEDRIVE1020 22 TUBE/#753TOX=34004400 5(N2/O2)+35(N2/WO2/HCL)+27(N2/O2)RS=3450/N+PEPN+PEP WET Etch TIME:660(BOE 7:1)PLAN+DIFFUSIONN+DIFFUSION950 15(N2/O2)+1335(POCl3)+5 N2/O2)A-1/14 TUBE/#216RS=823/N+N+DRIVEDRIVE900 15(N2/O2)+70(ST)+5 N2/O2)13TUBE/#348TOX=45005500 RS=1025/SIN PEPSIN PEPTIME:480(BOE 7:1)PLAPECVDPECVDOXFORD/#06TSIN=13001500 CNT PEPCNT PEPWET Etch TIME:480(BOE 7:1)PLAMETALMETALPURE ALSPUTTER/#1Al=20000METAL PEPMETAL PEPAL WET ETCHPLASINTERSINTER450,25min,N216 TUBE/#643BACK BACK METALMETALBHF:CH3C00H=2:1 10 DIPT=1500150Temp.=250,=1.310-4PaVES-2550/#01TCr=50050 TAu=1000100 C&I3N2B AUK-D FABFAB部工程技术部工程技术PDIPDI产品产品PROCESSPROCESS（2 2）PROCESS PROCESS PDP05PDP05STEPSTEPAUK-D CONDITION /RECIPE SPEC.1ST OXIDATION1ST OXIDATION(R)1050 5(O2)+140(STEM)+30(O2)*Recipe 18 TUBE/#105TOX=72008800 P+PEPP+PEP WET Etch TIME:720(BOE 7:1)MPAPBF COATINGPBF COATING3M-31CP COATING PBF COATER/#09T=38004200P+DIFFUSIONP+DIFFUSION(R)1000 78(N2/LO2=3/0.15)23 TUBE/#720RS=1521/LTOLTO770 15(N2/WO2=0.5/3)24 TUBE/#123P+P+DRIVEDRIVE1020 22 TUBE/#769TOX=1000 5(N2/O2)+70(N2/O2)+5(N2/O2)(Recipe)RS=2233/DEWETDEWET WET Etch TIME:70(BOE 7:1)WETPECVD PECVD SIN=1100 Target ()OXFORD/#_TSIN=10001150 CNT PEPCNT PEP WET Etch TIME:420(BOE 7:1)MPAMETALMETALPURE AL,15:1 HF=10SPUTTER/#1Al=20000METAL PEPMETAL PEP AL WET ETCHMPASINTERSINTER450,30min,N216 TUBE/#645M/PM/P*Manual _ Manual Sheet Curve Tracer BACK BACK METALMETALBHF:CH3C00H=2:1 10 DIPT=1500150Temp.=250,=1.310-4PaVES-2550/#01TCr=50050 TAu=1000100EDSEDS TEST _ Probe CardAUTO TESTERPGM C&I3N2B AUK-D FABFAB部工程技术部工程技术PDIPDI产品工艺流程产品工艺流程(DS3-23)(DS3-23)1ST OXIDEOXIDEP+ETCHOXIDEP+PHOTOOXIDEPRP+DIFFOXIDEP+N+ETCHOXIDEP+N+PHOTOOXIDEPRP+N+DIFFOXIDEP+N+SIN ETCHOXIDEP+N+SIN PHOTOOXIDEPRP+N+CNT ETCHP+N+SINCNT PHOTOPRP+N+SINPECVDP+N+SINAl ETCHP+N+SINAlAl DEPOP+N+SINAlB/MP+N+SINAlCr/AUPRAlSINP+N+Al PHOTO C&I3N2B AUK-D FABFAB部工程技术部工程技术PDIPDI产品参数产品参数DEVICEDEVICE原资材原资材PROCESSPROCESSMASKMASK曝光方式曝光方式CHIP SIZECHIP SIZECHIPCHIP数数特性特性NAMETHICKRESISTIVITYVF()ID()BVR()SD-202SD-202SWP-5024001520008000PDP50DS3-20MPA,PLA2.0mm2.0mm27591.31070DP2-16DP2-16SWP-5024001530008000PDP50DP2-16MPA,PLA1.6mm1.6mm43411.51065DS3-23DS3-23SWN-5034001520008000PDP01DS3-23PLA2.3mm2.3mm20471.31080DS3-25DS3-25SWN-5034001510004000PDP01DS3-25PLA2.5mm2.5mm17291.31080DS3-16DS3-16SWN-5034001510004000PDP01DS3-16PLA1.6mm1.6mm43411.31080DS3-30DS3-30SWN-5034001510004000PDP01DD3-30PLA3.0mm3.0mm11931.31065DS3-20DS3-20SWN-5034001510004000PDP01DS3-20PLA2.0mm2.0mm27591.31080DS0-30DS0-30SWN-50040015250350PDP01DS0-30PLA3.0mm3.0mm11931.31080DD3-30DD3-30DWN-5035601012004000PDP01DD3-30PLA3.0mm3.0mm11931.31080SD-208SD-208SWP-5043001520008000PDP50SD-208PLA1.4mm1.4mm58201.51065SD-201ASD-201ASWP-5024001520008000PDP50SD-201AMPA,PLA1.6mm1.6mm43981.31020NPD-01NPD-01SWN-5034001510004000PDP01NPD-01PLA2.1mm2.1mm24591.31040PN-6IHPAPN-6IHPADWN-5035601012004000PDP05PN-6IHPAMPA5.6mm5.3mm3381.3SD-212SD-212SWP-5024001520008000PDP50SD-212MPA1.83mm1.83mm32161.51065SD-219SD-219SWP-5024001520008000PDP50SD-1109MPA1.09mm1.09mm91080.51.31035SD-119SD-119SWN-5034001510004000PDP01SD-1109MPA1.09mm1.09mm91080.51.31035DS3-27DS3-27SWN-5034001510004000PDP01DS3-27MPA2.7mm2.7mm15301.3580KBS-N26-2KBS-N26-2SWN-5034001510004000PDP04-AKBS-N26MPA1.08mm2.67mm35641.35040PD-2222DPD-2222DDWN-5035601012004000PDP05PD-2222MPA2.2mm2.2mm22001.35040PD-4545DPD-4545DDWN-5035601012004000PDP05PD-4545MPA4.5mm4.5mm5191.31040 C&I3N2B AUK-D FABFAB部工程技术部工程技术 C&I3N2B AUK-D FABFAB部工程技术部工程技术PDIPDI产品光照测试（产品光照测试（1 1）10V条件，无光照10V条件，自然光照 C&I3N2B AUK-D FABFAB部工程技术部工程技术 C&I3N2B AUK-D FABFAB部工程技术部工程技术PDIPDI产品光照测试（产品光照测试（2 2）5V时突然关门慢慢将门关闭 C&I3N2B AUK-D FABFAB部工程技术部工程技术PTRPTR产品产品PROCESSPROCESS（TD1-06TD1-06）PHOTO TRANSISTOR PROCESS PHOTO TRANSISTOR PROCESS STEPSTEPCONDITION/RECIPESPEC.1ST OXIDATION1ST OXIDATION(R)1050 5(O2)+85(WO2)+30(O2)18TOX=58006800 BASE PEPBASE PEPWET ETCHMPAPBF COATINGPBF COATING3M-31CP (COATING)/9T=37004300BASE DIFFUSIONBASE DIFFUSION(R)950 25(N2/LO2=3/0.15)23RS=3947/LTOLTO770 15(N2/WO2=0.5/3)24BASE BASE DRIVEDRIVE1130 10(N2/O2)+95(N2/WO2/HCL)+25(N2/O2)22TOX=79009900 RS=110150/EMITTER PEPEMITTER PEPWET ETCHMPAEMT DEPOSITIONEMT DEPOSITION1050 5(N2/O2)+50(N2/O2/POCl3)+20(N2/O2)14RS=2.253.75/EMT EMT DRIVEDRIVE900 50(N2/WO2/HCl)+10(N2/O2)13TOX=41005100 RS=2.253.75/SIN PEPSIN PEPWET ETCHMPASIN SIN DEPODEPOASMTsin=18002200=1.92.1CONTACT PEPCONTACT PEPWET ETCH MPAMETALMETALAl(2)SPUTTER/VES2550TAl=1.82.2METAL PEPMETAL PEPWET ETCH MPASINTERSINTER450,25min,N216BACK METALBACK METALTemp.=250,=1.310-4PaT=1500150EBX-2000CTCr=50050/#2,3TAu=1000100 C&I3N2B AUK-D FABFAB部工程技术部工程技术TD1-06TD1-06工艺流程工艺流程1ST OXIDEP+PHOTOP+ETCHPBF COATP+DIFFN+PHOTON+ETCHN+DIFFSIN PHOTOSIN ETCHPECVDCNT PHOTOCNT ETCHAl DEPOAl PHOTOAl ETCH C&I3N2B AUK-D FABFAB部工程技术部工程技术TD1-06EDSTD1-06EDS规格规格项目项目VECOVECOVCBOVCBOVEBOVEBOVCEOVCEOVCES VCES HFEHFE测试条件测试条件50uA50uA50uA500uA5mA/1mA10V/1mASPECSPEC6.7/7.2V90/93V6.5/6.7V50/63V300mV3401500RANKRANKBSBSCSCSDSDSESES范围范围3404404406406409409401500HFEHFE在在N+DEPON+DEPO时根据时根据BASE RSBASE RS来调整时间进行控制来调整时间进行控制 C&I3N2B AUK-D FABFAB部工程技术部工程技术本社开发品：-根据本社提供的资料制作样品，投入前需要确认好RUNSHEET，在制作过程中要由质量部门跟踪。大连开发品：-进行试生产，3次QUAL合格后进行量产转换；-工艺改善时投入开发品进行评价，评价合格后可做变更进行量产。开发品管理开发品管理*开发品文件要进行分类管理，进行完毕的RUNSHEET又产品技师单独管理。C&I3N2B AUK-D FABFAB部工程技术部工程技术结束！结束！