BSIM6演示幻灯片.ppt

,单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,PDA Confidential and Proprietary,Platform DA,From BSIM4 to BSIM6,1,Contents,BSIM6-Charge based MOSFET Model,From BSIM4 to BSIM6,Parameter Equivalence,2,I.BSIM6-Charge based MOSFET Model,BSIM6 Model:,I-V,C-V,Core,Channel length modulation,DIBL,Velocity saturation,GIDL,Impact ionization,Direct tunneling gate current,Mobility degradation,Parasitic resistance,Short channel effects,Quantum effects,Temperature effects,Fringe capacitance,Overlap capacitance,Noise model,3,I.BSIM6-Charge based MOSFET Model,General relation between inversion charge density and voltage,From Poisson equation:,Gradual channel approximation:,Then:,Electric field:,4,I.BSIM6-Charge based MOSFET Model,General relationship between inversion charge density and voltage,According to Gauss law:,For weak inversion:,Charge sheet approximation:,(Substrate modulation factor),5,I.BSIM6-Charge based MOSFET Model,General relation between inversion charge density and voltage,If the channel potential is sufficiently positive:,Surface potential is related to its pinch-off value:,General relation between inversion charge density and voltage:,Linearization:,6,I.BSIM6-Charge based MOSFET Model,Current-voltage characteristic:,Static drain current:,Normalized drain current:,Source transconductance:,7,I.BSIM6-Charge based MOSFET Model,Current-voltage characteristic:,Ids-Vx Gummel symmetry:,Vg=0.2V(weak inversion),Vg=1.1V(strong inversion),After M.-A.Chalkiadaki,A.Mangla,C.C.Enz,et al,8,I.BSIM6-Charge based MOSFET Model,Capacitance-voltage characteristic:,Bulk charge with poly depletion effect:,Source charge:,Drain charge:,9,II.From BSIM4 to BSIM6,All of the short channel effects taken from BSIM4,Charge based core make all regions of operation continuous,(transition from weak to strong inversion),Simple analytical equations make the simulation more fast and accurate,Good model scalability using a single model parameter set without any binning,10,III.Parameter Equivalence,Core and Material properties related parameters,:,11,Parameter Equivalence,Threshold related parameters:,12,Parameter Equivalence,Drain current related parameters:,13,Parameter Equivalence,Velocity saturation and Impact ionization related parameters:,14,Parameter Equivalence,C-V parameters:,15,Thank you!,16,